Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus

Abstract

There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Applications No. 2003-189093, filed Jun. 30, 2003; No. 2003-193779, filed Jul. 8, 2003; No. 2003-308935, filed Sep. 1, 2003; No. 2.003-402197, filed Dec. 1, 2003; and No. 2004-093200, filed Mar. 26, 2004, the entire contents of all of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present application relates to a technique to manufacture a field effect transistor at a surface layer part of a non-single-crystal semiconductor thin film, and to single-crystal or polycrystal semiconductor thin film substrate used to manufacture a field effect transistor, and to crystallization method, a crystallization apparatus, a thin film transistor and a display apparatus suitable for manufacture of a display apparatus such as a liquid crystal or an organic EL or an electronic apparatus such as...

AI Technical Summary

Benefits of technology

[0096]FIG. 27 is a type drawing illustrating an effect of the present invention;

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Problems solved by technology

Irregularities are generated in characteristics of each thin film transistor due to nonuniformity in the number of crystal grain boundaries and, in particular, there is a problem that this transistor is not suitable for a display apparatus which requires uniform display in one screen.

However, when the silicon film is crystallized by using the conventi

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