Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device

Abstract

A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.

Description

[0001] This application is a Divisional of co-pending Application No. 10 / 808,361, filed on Mar. 25, 2004, the entire contents of which are hereby incorporated by reference and for which priority is claimed under 35 U.S.C. § 120.BACKGROUND OF THE INVENTION [0002] 1. Technical Field [0003] This invention relates to a composition for forming a porous film having improved dielectric properties, adhesion, coating uniformity, mechanical strength, and minimized moisture absorption, a method of manufacturing a porous film, a porous film, an interlayer dielectric film, and a semiconductor device having a porous film built therein. [0004] 2. Background Art [0005] In the progress of semiconductor integrated circuits toward higher integration, an increase of interconnect delay time caused by an increase of wiring capacitance which is a parasitic capacitance between metal wires becomes a barrier in enhancing the performance of semiconductor integrated circuits. The interconnect delay time, also ...

AI Technical Summary

Benefits of technology

The solution enables the formation of porous films with a relative dielectric constant of 2.0 or less, high mechanical strength, and minimized moisture absorption, thereby enhancing the performance and reliability of semiconductor devices by reducing parasitic capacitance and power consumption.

Problems solved by technology

In the progress of semiconductor integrated circuits toward higher integration, an increase of interconnect delay time caused by an increase of wiring capacitance which is a parasitic capacitance between metal wires becomes a barrier in enhancing the performance of semiconductor integrated circuits.

These methods, however, have notable drawbacks.

The first porous film forming method suffers from an increased cost because a siloxane polymer precursor solution must be synthesized.

Additionally, since the precursor solution is applied to form a coating, an amount of silanol groups remain in the coating, which gives rise to a degassing phenomenon that moisture or the like evaporates in the subsequent heat treatment step.

The porous film can be deteriorated in quality by moisture absorption.

The second porous film forming method needs a special applicator apparatus capable of controlling the rate of evaporation of a solvent from a wet gel, adding to the cost.

Since more silanol is left on surfaces of pores, the film as such is hygroscopic and susceptible to substantial quality deterioration.

Thus surface silanol must be silylated, which complicates the process.

In case a wet gel is formed by the CVD process, a special CVD system which is different from plasma CVD systems customarily used in the semiconductor process is needed, adding to the cost as well.

It is then difficult for the porous film to have a relative dielectric constant of 2.0 or less.

Undesirably, component (B) complicates not only the composition, but also the manufacturing process, and increases the cost.

For all these methods, a lowering of mechanical strength of porous films themselves is a problem.

If the silica skeleton has not been densified at this point, the film can be collapsed during the surfactant removal step, failing to effectively introduce pores.

As mentioned above, prior art materials suffer from problems such as the deterioration of film quality by heat treatment and increased costs.

Another problem is the difficulty to reduce the dielectric constant of a porous film because the pore size is increased during film formation.

A further problem is that when a prior art porous film is incorporated as a dielectric film for multilayer interconnections in semiconductor devices, the film fails to provide a mechanical strength necessary for the manufacture of semiconductor devices.

If the porous film used as a dielectric film for multilayer interconnections in semiconductor devices has a high relative dielectric constant, there arises a fatal problem that the RC delay in the multilayer interconnections of semiconductor devices is increased, so that no improvements in the performance of semiconductor devices (toward higher speed and lower power consumption) are achievable.

The low mechanical strength of the porous film has a negative impact on the reliability of semiconductor devices.

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