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Y5V dielectric composition

a technology of barium titanate and dielectric composition, applied in the direction of fixed capacitor details, stacked capacitors, fixed capacitors, etc., can solve the problems of reducing resistivity, reducing dielectric layers, and reducing the life of insulation resistance (ir) of devices, and achieves excellent reliability, small dielectric loss, and low aging rate.

Inactive Publication Date: 2007-06-12
FERRO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a dielectric composition that can be used to make ceramic multilayer capacitors compatible with internal electrodes containing base metals such as nickel or nickel alloys. The dielectric composition has a uniform dense microstructure of grains with an average diameter of about 3-4 microns, which is critical in achieving high reliability multilayer capacitors with dielectric layers thinner than 5 microns. The dielectric composition has a high dielectric constant with a small dielectric loss and excellent reliability under highly accelerated life testing conditions. The ceramic capacitors made from the dielectric composition have a high breakdown voltage in a DC field and meet the Y5V standard. The dielectric composition can be made by pre-reacting several minor ingredients to form precursors within the desired range. The multilayer chip capacitors fabricated using the dielectric composition have high insulation resistance and reliability under highly stressed conditions.

Problems solved by technology

Firing in a reducing atmosphere, however, causes the dielectric layers to be reduced, which decreases resistivity.
Multilayer ceramic chip capacitors using non-reducible dielectric materials have been proposed, however, such devices typically have a shorter life of insulation resistance (IR) and low reliability.
Such changes are undesirable in most applications.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0049]A dielectric composition identified as Example 1 was formed by mixing, blending, and / or milling in water appropriate amounts of BaTiO3 (pre-reacted), BaZrO3 (pre-reacted), Ba(Zn1 / 3Nb2 / 3)O3 (pre-reacted), MgO, Nd2O3, MnO2, Y2O3, and sintering frit that consist of BaO, CaO, TiO2, and SiO2 (pre-reacted) to arrive at the weight percentage shown in Table 3.

[0050]

TABLE 3Oxide ingredients of Example 1.Pre-reactedactualSimple oxideingredientsingredient wt %equivalent ingredientsWt %BaTiO384.74BaO63.56BaZrO312.62TiO229.24Ba(Zn1 / 3Nb2 / 3)O30.23ZrO25.65MgO0.07ZnO0.02Nd2O30.59MgO0.07MnO20.29Nb2O50.08CaTiO3 (frit)0.12MnO20.29BaO (frit)0.43Nd2O30.59SiO2 (frit)0.05Y2O30.40CaO0.05SiO20.05

Alternatively, the composition of Example 1 can be represented by the following formula:

(Ba0.9853Ca0.0021Y0.0042Nd0.0084)1.0001(Ti0.8705Zr0.1091Zn0.0007Mg0.0042Nb0.0042Mn0.008Y0.0042Si0.002)O3.0579

[0051]The powders had an average particle size of 0.5 to 1 μm. One hundred grams of the above powders was then adde...

example 2

[0054]A dielectric composition was formed by the following procedure. BaCO3, TiO2, ZrO2, Nd2O3.2H2O, ZnO, Nb2O5, MnCO3, Y2O3 powders were mixed together with water, and milled as a slurry according to the proportions of “actual ingredients” in Table 5. After thoroughly blending, mixing and milling in water, the slurry was then belt dried. The method of drying is not critical, and other conventional drying processes such as pan drying, belt drying, or freeze drying are believed to be effective.

[0055]The dried powder mix was then calcined through a batch kiln at 1100° C. for 4 hours to form a precursor powder. To 99.62 wt % of the precursor powder, 0.38 wt % of a BaO—CaTiO3—SiO2 sintering flux was added. The final precursor powder composition can be expressed as “simple oxide ingredients” in Table 5.

[0056]

TABLE 5Oxide ingredients of Example 2.Simple oxideactualequivalentPre-reactedingredientcompositionactual ingredientswt %IngredientsWt %BaCO368.49BaO62.91TiO224.89TiO229.47ZrO24.64ZrO...

example 3

[0058]A dielectric composition was prepared in the manner of Example 2 except that no ZnO was used. The final composition can be expressed as in Table 6.

[0059]

TABLE 6Oxide ingredients of Example 3.Simple oxideactualequivalentPre-reactedingredientcompositionactual ingredientswt %ingredientsWt %BaTiO386.21BaO6.52BaO63.20TiO20.08TiO226.91ZrO25.50ZrO25.50MgO0.08MgO0.08Nb2O50.08Nb2O50.08MnO20.39MnO20.39Nd2O30.51Nd2O30.51Y2O30.51Y2O30.51CaO0.06CaO0.06SiO20.06SiO20.06

[0060]Alternately, the composition of Example 3 can be represented by the following formula:

(Ba0.9894Ca0.0026Y0.0054Nd0.0072)0.971(Ti0.8709Zr0.1049Mg0.0047Nb0.0014Mn0.0105Y0.0053Si0.0023)O2.9707.

[0061]Following the procedure of Example 1, multilayer chip capacitors were made from the powder of Example 3 and tested. The electrical properties are summarized in Table 7. The exemplary chips made from the compositions of Examples 1, 2, and 3, each have a very high dielectric constant, low DF, low aging rate, small fired grain size,...

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Abstract

Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise BaTiO3 doped with other metal oxides such as MgO, CaO, ZnO, MnO2, ZrO2, SiO2, Nd2O3, Nb2O5, and Y2O3.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of Invention[0002]This invention relates to a barium titanate-based dielectric composition, and more particularly to a barium titanate-based dielectric composition that can be used to form multilayer ceramic chip capacitors having internal base metal electrodes formed of nickel or nickel alloys.[0003]2. Background of the Invention[0004]Multilayer ceramic chip capacitors have been widely utilized as miniature-sized, high capacitance, and high reliability electronic components. In accordance with increasing demands for high-performance electronic equipment, multilayer ceramic chip capacitors also have encountered marketplace demand for smaller size, higher capacitance, lower cost, and higher reliability.[0005]Multilayer ceramic chip capacitors generally are fabricated by forming alternating layers of an internal electrode forming paste and a dielectric layer-forming paste. Such layers are typically formed by sheeting, printing, or similar tech...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01G4/06C04B35/468
CPCH01G4/1227H01G4/30
Inventor MEGHERHI, MOHAMMED H.CHU, MIKE S. H.MCCAULEY, DANIEL E.ROMER, ELIZABETH W.COPPENS, WILLIBRORDUS J.ALBERTSEN, KNUTH
Owner FERRO CORP
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