Planar electronebulization sources modeled on a calligraphy pen and the production thereof
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example 1
Design of Nanoelectrospray Sources Microfabricated According to the Present Invention
[0145]A first example concerns the dimensions and the shapes chosen to form a nebulisation device as described in the present invention.
[0146]This first device has small tip dimensions due to the targeted application field, in other words a nanoelectrospray for the ionisation of solutions before their analysis by mass spectrometry. The device is formed in accordance with FIGS. 1A and 1B. The reservoir 4 of the device has for dimensions 2.5 mm×2.5 mm×e (μm), where e is the thickness of the layer of material used to form the wafer 2. The value of e is close to that of h, considered hereafter, the thickness of sacrificial material being around one hundred nanometers. The width of the capillary slot 5 is 8 μm at the end 6 of the tip 3. The thickness of the wafer 2 so as to observe the capillarity effect and the effective penetration of the liquid in the capillary slot 5 follows from the value of the slo...
example 2
Manufacture of Design Sources Described in Example 1 by Means of Silicon and SU-8 Materials
[0147]The second example concerns the manufacture by microtechnology of nebulisation sources, as described in example 1. The materials used are silicon for the support 1 and the negative photolithographic resin SU-8 for the dip pen type wafer 2. The method of manufacture stems from the method described above. It is adapted to the materials chosen.
[0148]A substrate of silicon oriented (100) and n doped, of 3 inches, is covered with a layer of 200 nm of silicon oxide (SiO2), then masked by lithography. The layer of SiO2 is attacked by an acid solution of HF:H2O on the non-masked zones. The exposed silicon is then attacked by a caustic soda solution (KOH) so as to materialise the cleavage lines. A layer of 150 nm of nickel is then deposited on the silicon surface by a spraying technique under argon (Plassys MP 450S). The layer of nickel is attacked in a local manner by UV photolithography (positi...
example 3
Design of Particle Ejection Device of Around One Hundred Micrometers
[0150]A third example concerns the dimensions and the shapes chosen for forming a particle ejection device having a size of around one hundred micrometers, as described in the present invention.
[0151]This device has larger dimensions than that described in example 1. Here, the dimensions of the capillary slot 5 and the reservoir 4 must be compatible with the handling of objects of around one hundred micrometers. Due to this range of dimensions, the device described in example 3 also applies to the handling of cells of size close to 100 μm diameter, for the preparation of cell chips for example.
[0152]The reservoir 4 of said device has for dimensions 1 cm×1 cm×e (μm), where e is the thickness of the wafer 2. In the same way as example 1, the value of e is defined as a function of the width of the capillary slot 5 so as to have an aspect ratio R in the end 6 of the wafer that is greater than 1. The particles handled by...
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