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Semiconductor device and method of fabricating the same

a technology of semiconductor devices and semiconductors, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of affecting the reliability of devices, and tendency toward higher integration

Inactive Publication Date: 2016-09-13
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device and a fabrication method with high-reliability and high-durability. The device is capable of forming solder bumps on electrode pads made from a metal other than Al without degrading the adhesion strength between the electrode pads and solder bumps and the electric contact characteristic therebetween. The fabrication method includes an adhesion layer formed between the electrode pads and the barrier metal for increasing the adhesion strength between them, even if the electrode pads are changed from the convention Al based electrode pads into the Cu based electrode pads. This allows for the effective prevention of thermal diffusion of solder and obtains good electric contact characteristic between the finally formed solder bumps and the Cu based electrode pads and also increases the adhesion strength therebetween. The semiconductor device is useful for mounting on a flip-chip mounting method and improves the electric contact characteristic, reliability, and durability of the device product.

Problems solved by technology

While Al has been used as an interconnection material of LSIs for a long time, the use of Al has come to cause serious problems associated with delay of signals or deterioration in the reliability in multiple interconnection layers along with tendency toward higher integration, finer-geometries, and higher operational speed of LSIs.
However, since the above-described process of forming solder ball bumps on electrode pads via a BLM film is predicated on the use of Al based electrode pads, if such a process is applied to an LSI using Cu electrode pads as terminals of Cu interconnections in place of the conventional Al based electrode pads as terminals of Al based interconnections, there may occur the following problem.
Namely, since the adhesion strength between the BLM film and the Cu electrode pads is lowered, there may easily arise the falling of solder ball bumps from a semiconductor chip upon mounting of the semiconductor chip on a printed wiring board or the failure in electric contact characteristic between the Cu electrode pads and the solder ball bumps when the semiconductor chip undergoes a temperature cycle or a high temperature load, thereby exerting adverse effect on the device reliability.

Method used

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  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same

Examples

Experimental program
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Effect test

example 1

[0058]The selective etching of the silicon nitride film 14 with the resist film 16 taken as a mask was performed using the magnetron RIE apparatus under the following condition:[0059]flow rate of reactive gas: C4F8 / CO=10 / 90 sccm[0060]pressure: 2.0 Pa[0061]RF power: 2.2 W / cm2 [0062]strength of magnetic field: 150 Gauss

[0063]The formation of an Al film as the adhesive layers 20a and 20b was performed using a normal sputter apparatus under the following condition:[0064]DC power: 4.0 kW[0065]flow rate of atmospheric gas: Ar=100 sccm[0066]pressure: 0.5 Pa[0067]temperature of wafer stage: room temperature[0068]thickness of Al adhesion layer: 0.1 μm

[0069]The formation of each of films constituting the BLM film 24 having the stacked structure of Cr / Cu / Au was performed by a normal sputter apparatus under the following condition:

[0070](1) Formation Condition of Cr Film[0071]DC power: 3.0 kW[0072]flow rate of atmospheric gas: Ar=75 sccm[0073]pressure: 1.0 Pa[0074]temperature of wafer stage: 50...

example 2

[0088]The selective etching for the silicon nitride film 14 with the resist film 16 taken as a mask using the magnetron RIE apparatus under the following condition:[0089]flow rate of reactive gas: C4F8 / CO=10 / 90 sccm[0090]pressure: 2.0 Pa[0091]RF power: 2.2 W / cm2 [0092]strength of magnetic field: 150 Gauss

[0093]The formation of a Ti film as the adhesive layers 20a and 20b was performed using a normal sputter apparatus under the following condition:[0094]DC power: 5.0 kW[0095]flow rate of atmospheric gas: Ar=100 sccm[0096]pressure: 0.5 Pa[0097]temperature of wafer stage: room temperature[0098]thickness of Ti adhesion layer: 0.1 μm

[0099]The formation of each of films constituting the BLM film 24 having the stacked structure of Ti / Cu / Au was performed using a normal sputter apparatus under the following condition:

[0100](1) Formation Condition of Ti Film[0101]DC power: 4.0 kW[0102]flow rate of atmospheric gas: Ar=75 seem[0103]pressure: 1.0 Pa[0104]temperature of wafer stage: 50° C.[0105]t...

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Abstract

An adhesion layer made from Al film or Ti film is formed on Cu electrode pad portions as external connection terminals of a Cu interconnection layer of an LSI formed on the surface layer of a semiconductor substrate. A BLM film having a stacked structure of Cr / Cu / Au or Ti / Cu / Au is formed on the adhesion layer. Solder ball bumps made from Pb and Sn are formed on the BLM film. The adhesion layer ensures a high adhesion strength and a high electric contact characteristic between the Cu electrode pad portions and the BLM film, that is, between the Cu electrode pads and the solder ball bumps.

Description

RELATED APPLICATION DATA[0001]The present application is a reissue application of application Ser. No. 09 / 313,172, now U.S. Pat. No. 6,545,355, issued Apr. 8, 2003, which claims priority to Japanese Application No. P10-141481 filed May 22, 1998, which application is incorporated herein by reference to the extent permitted by law.BACKGROUND OF THE INVENTION[0002]The present invention relates to a semiconductor device and a method of fabricating the semiconductor device, and particularly to a semiconductor device in which solder bumps are formed on electrode pads via a barrier metal film is and a method of fabricating the semiconductor device.[0003]To increasingly progress miniaturization of electronic equipment, it is important how improve the mounting density of electronic parts. With respect to semiconductor ICs (Integrated Circuits), studies have been actively made to develop such a high density mounting technology as to directly mount a bare chip on a printed wiring board, typica...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L23/48H01L21/4763H01L23/00H01L21/60H01L23/485
CPCH01L2224/1147H01L2224/13023H01L2224/131H01L2924/01004H01L2924/01013H01L2924/01018H01L2924/01022H01L2924/01027H01L2924/01029H01L2924/01042H01L2924/01047H01L2924/01073H01L2924/01074H01L2924/01078H01L2924/01079H01L2924/01082H01L2924/14H01L2924/00013H01L2924/01006H01L2924/01024H01L2924/01033H01L2924/014H01L2224/05572H01L2924/0002H01L2224/0401H01L23/3192H01L24/05H01L24/13H01L2224/05022H01L2224/13021H01L2224/13099H01L2924/00014H01L2224/05552H01L21/60H01L21/4763H01L23/48
Inventor YANAGIDA, TOSHIHARU
Owner SONY CORP
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