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31 results about "Potassium ion conductance" patented technology

B<3+> and Al<3+> ion collaboratively doped K6Si2O7 potassium fast ion conductor and preparation method thereof

The invention discloses a B<3+> and Al<3+> ion collaboratively doped K6Si2O7 potassium fast ion conductor and a preparation method thereof. The B<3+> and Al<3+> ion collaboratively doped K6Si2O7 potassium fast ion conductor is characterized in that the stoichiometric equation is K<6+x+y>B<x>Al<y>Si<2-x-y>O7, wherein x is within 0.05 to 0.10, and y is within 0.05 to 0.1; and the normal-temperaturepotassium ion conductivity exceeds 5*10<-4> S / cm. B<3+> and Al<3+> are adopted to partially replace Si<4+> ions, and interstitial potassium ions are generated in crystals to reduce migration activation energy of the potassium ions; the size of a migration channel of the potassium ions is adjusted through small-ion-radius B<3+> doping so as to adapt to rapid migration of the potassium ions; and inthe preparation process, the surfaces of K6Si2O7 particles are modified, and the easy-to-sinter characteristic is formed. Through the collaborative effect, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Double perovskite negative electrode material prepared through template synthesis and used for potassium ion battery, and preparation method thereof

The invention provides a double perovskite negative electrode material prepared through template synthesis and used for a potassium ion battery, and a preparation method thereof. The invention is characterized in that the composition of the negative electrode material is KY<0.8>Ba<0.2>Cr<0.9>Zn<0.1>Mo<0.9>Fe<0.1>O<6>; the continuous channel structure of gel is employed as a template in the process of preparation, and a double perovskite-structured product with continuous porous morphology and mutually bonded particle parts is formed, wherein such morphology is beneficial for reducing crystal boundary resistance and electron transfer resistance and accelerating potassium ion migration capability and oxidation reduction reaction rate; the double perovskite negative electrode material has certain structural rigidity, so buffering is formed for volumetric changes of the material during charging and discharging ; furthermore, due to co-occupation of position A by K and Y, electronic conductivity is improved; due to partial Ba doping at position Y, the conductivity of potassium ions is improved; Zn and Fe doping at position B can improve the stability of a perovskite structure; and thus, the potassium ion battery negative electrode material with high performance is eventually formed.
Owner:宁波吉电鑫新材料科技有限公司

Electric field induced crystallization K6Si2O7 potassium fast ionic conductor synergistically doped with P5+, Al3+ and B3+ ions and preparation method thereof

An electric field induced crystallization K6Si2O7 potassium fast ionic conductor synergistically doped with P5+, Al3+ and B3+ ions and a preparation method thereof are characterized in that the stoichiometric formula is K<6+x+y-z>B<x>Al<y>P<z>Si<2-x-y-z>O7, wherein x is 0.1-0.15, y is 0.1-0.15, and z is 0.02-0.05; Al3+ and B3+ partially replace Si4+ ions to produce high-concentration interstitial potassium ions in a crystal, which is helpful to reduce the activation energy of potassium ion migration; the electronic conductivity of the fast ionic conductor is further reduced through doping of P5+; the size of the potassium ion migration channel is adjusted through doping of B3+ with small ion radius in order to adapt to the rapid migration of potassium ions; and the surface of K6Si2O7 particles is modified in the preparation process to make the conductor easy to sinter. At the same time, a strong DC electric field is introduced to induce crystallization, so as to accelerate the crystallization rate, reduce the crystallization temperature and improve the crystallization integrity. The synergistic effect makes the conductivity of potassium ions of the potassium fast ionic conductor exceed 5*10<-4>S / cm at room temperature, which is closer to the conductivity of potassium ions of liquid electrolyte.
Owner:NINGBO UNIV

P<5+>, A1<3+> and B<3+> ion collaboratively doped K2MgSi5O12 potassium fast ion conductor and preparation method thereof

The invention discloses a P<5+>, A1<3+> and B<3+> ion collaboratively doped K2MgSi5O12 potassium fast ion conductor and a preparation method thereof. The P<5+>, A1<3+> and B<3+> ion collaboratively doped K2MgSi5O12 potassium fast ion conductor is characterized in that the stoichiometric equation is K<2+x+y-z>MgB<x>Al<y>P<z>Si<5-x-y-z>O12, wherein x is within 0.05 to 0.15, y is with 0.05 to 0.15, and z is within 0.02-0.05; and the normal-temperature potassium ion conductivity exceeds 5*10<-4> S / cm. A1<3+> and B<3+> are adopted to partially replace Si<4+> ions, and interstitial potassium ions are generated in crystals to reduce migration activation energy of the potassium ions; the electronic conductivity of the fast ion conductor is further lowered through P<5+> doping; the size of a migration channel of the potassium ions is adjusted through small-ion-radius B<3+> doping so as to adapt to rapid migration of the potassium ions; and in the preparation process, the surfaces of K2MgSi5O12particles are modified, and the easy-to-sinter characteristic is formed. Through the collaborative effect, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds5*10<-4> S / cm and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Liquid-phase synthesized K6.25Be0.1Al0.1P0.05Ti0.05Si1.7O7 potassium fast ion conductor and preparation method thereof

The invention relates to a liquid-phase synthesized K6.25Be0.1Al0.1P0.05Ti0.05Si1.7O7 potassium fast ion conductor and a preparation method thereof. The liquid-phase synthesized K6.25Be0.1Al0.1P0.05Ti0.05Si1.7O7 potassium fast ion conductor has the characteristics that Al<3+> and Be<2+> are used for partially replacing Si<4+> ions, interstitial potassium ions are produced in a crystal, and migration activation energy of potassium ions is lowered; the electronic conductivity of the fast ion conductor is further lowered by doping P<5+>; the size of a potassium migration channel is adjusted by doping the Be<2+> with small ion radius to adapt to rapid migration of the potassium ions; the distorted lattice structure is formed by partially doping Ti<4+>, lattice imperfection is increased, and potassium ion conduction is facilitated; and in the preparation process, the surfaces of K6Si2O7 particles are modified to form the easy-sintering property. According to the synergistic effects, the room-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm, and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Method for Controlling Hematophagous or Sap-Feeding Arthropods

ActiveUS20190320655A1Increase mRNA levelsGood curative effectBiocideAnimal repellantsMortality rateKir channel
Modulation of inward potassium ion conductance with structurally diverse small-molecules in the arthropod salivary gland induces arthropod salivary gland failure that results in a reduction or elimination in the ability of the arthropod to feed. Administering Kir channel inhibitors reduces food intake, increases feeding time, reduces salivary gland secretion, induces mortality, and reduces transmission of vector-borne pathogens. Kir channel inhibitors induce these adverse effects in ticks, mosquitoes, horn flies, and aphids.
Owner:BOARD OF SUPERVISORS OF LOUISIANA STATE UNIV & AGRI & MECHANICAL COLLEGE

Electric field induced crystallization K<6.15>Zn<0.05>B<0.2>Al<0.1>P<0.05>Zr<0.05>Si<1.6>O<7> potassium fast ion conductor and preparation method thereof

The invention discloses an electric field induced crystallization K<6.15>Zn<0.05>B<0.2>Al<0.1>P<0.05>Zr<0.05>Si<1.6>O<7> potassium fast ion conductor and a preparation method thereof. Al<3+> and B<3+>are used for partially substituting Si<4+> ions, high-concentration interstitial potassium ions are generated in a crystal, and the reduction of the migration activation energy of potassium ions is facilitated; the electron conductivity of the fast ion conductor is further reduced by doping P<5+>; the size of migration channels of the potassium ions is adjusted by doping B<3+> with a small ionicradius to adapt to the rapid migration of the potassium ions; Zr<4+> is partially doped to form a distorted lattice structure to increase lattice imperfection to facilitate potassium ion conduction; cation vacancies are generated by doping Zn<2+> to increase migratory routes of the potassium ions; and the surface of K6Si2O7 particles is modified during the preparation to form an easy-sintering property. Meanwhile, the introduction of a strong direct current electric field induces crystallization to accelerate the crystallization rate, lower the crystallization temperature and increase the crystal integrity. The synergistic effects enable normal temperature potassium ion conductivity of the potassium fast ion conductor to exceed 5*10<-4> S / cm and to be closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Liquid-phase synthesis K2.4MgFe0.05Be0.2Al0.15Ti0.05Si4.6O12 potassium fast ion conductor and preparation method thereof

The invention discloses a liquid-phase synthesis K2.4MgFe0.05Be0.2Al0.15Ti0.05Si4.6O12 potassium fast ion conductor and a preparation method thereof. The liquid-phase synthesis K2.4MgFe0.05Be0.2Al0.15Ti0.05Si4.6O12 potassium fast ion conductor is characterized in that the normal-temperature potassium ion conductivity exceeds 5*10<-4> S / cm. A1<3+> and Be<2+> are adopted to partially replace Si<4+>ions, and interstitial potassium ions are generated in crystals to reduce migration activation energy of the potassium ions; the size of a migration channel of the potassium ions is adjusted through small-ion-radius Be<2+> doping so as to adapt to rapid migration of the potassium ions; through Ti<4+> partial doping, distorted lattice structures are formed to increase lattice defects, and thus potassium ion conduction is facilitated; through Fe<3+> partial doping, cation vacancies are formed to increase a potassium ion migration path; and in the preparation process, the surfaces of K2MgSi5O12 particles are modified, and the easy-to-sinter characteristic is formed. Through the collaborative effect, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds5*10<-4> S / cm and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

K6Si2O7 potassium fast ion conductor synergistically doped with P<5+>, Al<3+> and Be<2+> ions and preparation method of K6Si2O7 potassium fast ion conductor

The invention relates to a K6Si2O7 potassium fast ion conductor synergistically doped with P<5+>, Al<3+> and Be<2+> ions and a preparation method of the K6Si2O7 potassium fast ion conductor. The K6Si2O7 potassium fast ion conductor is characterized in that the stoichiometric formula is K<6+2x+y-z>Be<x>Al<y>P<z>Si<2-x-y-z>O7, wherein <x>=0.05-0.10; <y>=0.05-0.10; <z>=0.02-0.05; and the normal temperature potassium ion conductivity exceeds 5*10<-4> S / cm. Al<3+> and Be<2+> are adopted to partially substitute for Si<4+> ions, and interstitial potassium ions are generated in crystals to reduce themigration activation energy of the potassium ions; the electronic conductivity of the fast ion conductor is further reduced through P<5+> doping; the size of migration channels of the potassium ions is adjusted through the doping of Be<2+> with a small ionic radius to adapt to the rapid migration of the potassium ions; and the surface of K6Si2O7 particles is modified in the preparation process toform the easy sintering characteristic. The synergistic effects enable the normal temperature potassium ion conductivity of the potassium fast ion conductor to exceed 5*10<-4> S / cm and be closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

A template synthesis double perovskite potassium ion battery negative electrode material and preparation method thereof

The invention provides a double perovskite negative electrode material prepared through template synthesis and used for a potassium ion battery, and a preparation method thereof. The invention is characterized in that the composition of the negative electrode material is KY<0.8>Ba<0.2>Cr<0.9>Zn<0.1>Mo<0.9>Fe<0.1>O<6>; the continuous channel structure of gel is employed as a template in the process of preparation, and a double perovskite-structured product with continuous porous morphology and mutually bonded particle parts is formed, wherein such morphology is beneficial for reducing crystal boundary resistance and electron transfer resistance and accelerating potassium ion migration capability and oxidation reduction reaction rate; the double perovskite negative electrode material has certain structural rigidity, so buffering is formed for volumetric changes of the material during charging and discharging ; furthermore, due to co-occupation of position A by K and Y, electronic conductivity is improved; due to partial Ba doping at position Y, the conductivity of potassium ions is improved; Zn and Fe doping at position B can improve the stability of a perovskite structure; and thus, the potassium ion battery negative electrode material with high performance is eventually formed.
Owner:宁波吉电鑫新材料科技有限公司

P5+, Al3+ and B3+ ions co-doped K6Si2O7 potassium fast ion conductor and preparation method thereof

The invention relates to a P5+, Al3+ and B3+ ions co-doped K6Si2O7 potassium fast ion conductor and a preparation method thereof. The conductor is characterized in that a stoichiometric formula is K6+x+y-zBxAlyPzSi2-x-y-zO7, wherein x = 0.05~0.10, y = 0.05~0.10, z = 0.02~0.05, and normal temperature potassium ion conductivity exceeds 5*10<-4>S / cm. The conductor is advantaged in that Si4+ ions arepartially replaced with Al3+ and B3+, and interstitial potassium ions are generated in a crystal to reduce potassium ion migration activation energy; electronic conductivity of the fast ion conductoris further reduced by P5+ doping; the size of a migration channel of potassium ions is adjusted by doping of B3+ with a small ionic radius to adapt to rapid migration of the potassium ions; in the preparation process, a surface of the K6Si2O7 particles is modified to form easy-sintering property; the synergistic effect makes potassium ion conductivity of the potassium fast ion conductor exceed 5*10<-4>S / cm, which is closer to the potassium ion conductivity of the liquid electrolyte.
Owner:NINGBO UNIV

Electric field induced crystallization K2.15MgCu0.05Be0.15P.05Zr0.03Si4.77O12 potassium fast ionic conductor and preparation method

An electric field induced crystallization K2.15MgCu0.05Be0.15P.05Zr0.03Si4.77O12 potassium fast ionic conductor and a preparation method thereof are characterized in that Be2+ partially replaces Si4+ ions to produce high-concentration interstitial potassium ions in a crystal, which is helpful to reduce the activation energy of potassium ion migration; the electronic conductivity of the fast ionic conductor is further reduced through doping of P5+; the size of the potassium ion migration channel is adjusted through doping of Be2+ with small ion radius in order to adapt to the rapid migration of potassium ions; cationic vacancies are produced through doping of Cu2+ to increase the number of potassium ion migration paths; a distorted lattice structure is formed through partial doping of Zr4+ to increase lattice defects, which is beneficial to potassium ion conduction; and the surface of K2MgSi5O12 particles is modified in the preparation process to make the conductor easy to sinter. At the same time, a strong DC electric field is introduced to induce crystallization, so as to accelerate the crystallization rate, reduce the crystallization temperature and improve the crystallization integrity. The synergistic effect makes the conductivity of potassium ions of the potassium fast ionic conductor exceed 5*10<-4>S / cm at room temperature, which is closer to the conductivity of potassium ions of liquid electrolyte.
Owner:NINGBO UNIV

P<5+>, A1<3+> and Be<2+> ion collaboratively doped K2MgSi5O12 potassium fast ion conductor and preparation method thereof

The invention discloses a P<5+>, A1<3+> and Be<2+> ion collaboratively doped K2MgSi5O12 potassium fast ion conductor and a preparation method thereof. The P<5+>, A1<3+> and Be<2+> ion collaborativelydoped K2MgSi5O12 potassium fast ion conductor is characterized in that the stoichiometric equation is K<2+2x+y-z>MgBe<x>Al<y>P<z>Si<5-x-y-z>O12, wherein x is within 0.05 to 0.10, y is within 0.05 to 0.10, and z is within 0.02 to 0.05; and the normal-temperature potassium ion conductivity exceeds 5*10<-4> S / cm. A1<3+> and Be<2+> are adopted to partially replace Si<4+> ions, and interstitial potassium ions are generated in crystals to reduce migration activation energy of the potassium ions; the electronic conductivity of the fast ion conductor is further lowered through P<5+> doping; the size of a migration channel of the potassium ions is adjusted through small-ion-radius Be<2+> doping so as to adapt to rapid migration of the potassium ions; and in the preparation process, the surfaces ofK2MgSi5O12 particles are modified, and the easy-to-sinter characteristic is formed. Through the collaborative effect, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

P<5+> and Be<2+> co-doped K2MgSi5O12 potassium fast ion conductor crystallized under induction of electric field and preparation method of potassium fast ion conductor

The invention relates to a P<5+> and Be<2+> co-doped K2MgSi5O12 potassium fast ion conductor crystallized under induction of an electric field and a preparation method of the potassium fast ion conductor. The potassium fast ion conductor is characterized in that the stoichiometric formula is K<2+2x-z>MgBe<x>P<z>Si<5-x-z>O<12>, wherein x is in a range of 0.1-0.2, and z is in a range of 0.02-0.05; and the normal-temperature potassium ion electrical conductivity exceeds 5*10<-4> S / cm. Be<2+> is used to partially substitute Si<4+> ions, and gap potassium ions are generated in the crystal, so thatmigration activation energy of potassium ions is reduced; electron conductivity of the fast ion conductor is further reduced through doping of P<5+>; the size of migration channels of the potassium ions is adjusted through doping of the Be<2+> with a small ion radius so as to adapt to rapid migration of the potassium ions; and the surfaces of the K2MgSi5O12 particles are modified in the preparation process so as to form an easy-to-sinter characteristic. Meanwhile, a strong direct current field is introduced to induce crystallization for increasing the crystallization speed, reducing the crystallization temperature and improving crystallization integrity. The synergistic effect enables normal-temperature potassium ion electrical conductivity of the potassium fast ion conductor to exceed 5*10<-4> S / cm, which is closer to potassium ion electrical conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Liquid phase synthesis multi-ion-doped potassium fast ion conductor and preparation method thereof

The invention discloses a liquid phase synthesis multi-ion-doped potassium fast ion conductor and a preparation method thereof. The liquid phase synthesis multi-ion-doped potassium fast ion conductoris characterized in that the stoichiometric formula is K<6.25>Fe<0.05>Be<0.2>Ti<0.05>Si<1.75>O<7>; Be<2+> is used for partially substituting Si<4+> ions, and interstitial potassium ions are generatedin a crystal to reduce the migration activation energy of the potassium ions; migration channels of the potassium ions are adjusted by doping Be<2+> with a small ionic radius to adapt to the rapid migration of the potassium ions; a distorted lattice structure is formed by partially doping Ti<4+> to increase lattice imperfection to facilitate potassium ion conduction; cationic vacancies are formedby partially doping Fe<3+> to increase migration paths of the potassium ions; and in the preparation process, the surface of K6Si2O7 particles is modified to form easy sintering characteristics. The synergistic effects enable the normal temperature potassium ion conductivity of the potassium fast ion conductor to exceed 5*10<-4> S / cm and to be closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Liquid-phase synthesis K2.15MgFe0.05Cu0.05Al0.2B0.2Ti0.02Si4.58O12 potassium fast ion conductor and preparation method

The invention discloses a liquid-phase synthesis K2.15MgFe0.05Cu0.05Al0.2B0.2Ti0.02Si4.58O12 potassium fast ion conductor and a preparation method. The conductor is characterized in that the normal-temperature potassium ion conductivity is greater than 5*10<-4>S / cm. Si<4+> ions are partially substituted by B<3+> and Al<3+>, interval potassium ions are generated in a crystal, and thus the migrationactivation energy of the potassium ions can be degraded; through B<3+> doping of a small ion radius, the size of a migration channel of the potassium ions can be adjusted to be adaptive to rapid migration of the potassium ions; due to partial doping of Ti<4+>, a distorted lattice structure is formed, then lattice defects are increased, and potassium ion conductivity can be facilitated; due to partial doping of Cu<2+> and Fe<3+>, cation vacancies are formed, and thus migration paths of the potassium ions can be increased; and in addition, in the preparation process, modification is implementedon surfaces of K2MgSi5O12 granules, so that an easy sintering property is achieved. Due to the synergetic effects, the normal-temperature potassium ion conductivity of the potassium fast ion conductor is greater than 5*10<-4>S / cm, which is approximate to potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

A liquid phase synthesis k 6.25 be 0.1 al 0.1 p 0.05 ti 0.05 the si 1.7 o 7 Potassium fast ion conductor and preparation method thereof

A liquid-phase synthetic K 6.25 be 0.1 al 0.1 P 0.05 Ti 0.05 Si 1.7 o 7 Potassium fast ion conductor and preparation method thereof, is characterized in that: adopt Al 3+ 、Be 2+ Partial replacement of Si 4+ Ions, generate interstitial potassium ions in the crystal and reduce the activation energy of potassium ion migration; through P 5+ Doping further reduces the electronic conductivity of fast ion conductors; through the small ionic radius Be 2+ Doping adjusts the size of the migration channel of potassium ions to adapt to the rapid migration of potassium ions; through Ti 4+ Partial doping forms a distorted lattice structure to increase lattice defects, which is conducive to the conduction of potassium ions; and during the preparation process at K 6 Si 2 o 7 The surface of the particles is modified to form easy sintering properties. These synergistic effects make the normal temperature potassium ion conductivity of this potassium fast ion conductor exceed 5·10 ‑4 S / cm, which is closer to the potassium ion conductivity of the liquid electrolyte.
Owner:NINGBO UNIV

Electric field induced crystallization P<5+>, Al<3+> and Be<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor and preparation method thereof

The invention discloses an electric field induced crystallization P<5+>, Al<3+> and Be<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor and a preparation method thereof. The electricfield induced crystallization P<5+>, Al<3+> and Be<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor is characterized in that a stoichiometric formula is K<2+2x+y-z>MgBe<x>Al<y>P<z>Si<5-x-y-z>O<12>, wherein x=0.05-0.15; y=0.05-0.15; z=0.02-0.05; and the potassium ion conductivity at a room temperature exceeds 5.10<-4>S / cm. Al<3+> and Be<2+> are used for partially substituting Si<4+> ions, and interstitial potassium ions are generated in a crystal to reduce the migration activation energy of the potassium ions; the electron conductivity of the fast ion conductor is further reduced by doping P<5+>; the size of migration channels of the potassium ions is adjusted by doping Be<2+> with a small ionic radius to adapt to the rapid migration of the potassium ions; and the surface of K2MgSi5O12 particles is modified during the preparation to form an easy-sintering property. Meanwhile, the introduction of a strong direct current electric field induces crystallization to accelerate the crystallization rate, lower the crystallization temperature and increase the crystal integrity. The synergistic effects enable the normal temperature potassium ion conductivity of the potassiumfast ion conductor to exceed 5*10<-4>S / cm and to be closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

K2MgSi5O12 potassium fast ion conductor with Al<3+> and B<3+> synergistically doped and production method of K2MgSi5O12 potassium fast ion conductor with Al<3+> and B<3+> synergistically doped

The invention discloses a K2MgSi5O12 potassium fast ion conductor with Al<3+> and B<3+> synergistically doped and a production method of the K2MgSi5O12 potassium fast ion conductor with the Al<3+> andthe B<3+> synergistically doped. The K2MgSi5O12 potassium fast ion conductor with the Al<3+> and the B<3+> synergistically doped is characterized in that a stoichiometric equation is K(2+x+y)MgBxAlySi(5-x-y)O12, wherein x is 0.05 to 0.15; y is 0.05 to 0.15; and the normal-temperature potassium ion conductivity exceeds 5*10<-4> S / cm. The Al<3+> and the B<3+> are adopted for partially replacing Si<4+> ions, interstitial potassium ions are generated in crystals, and migration activation energy of potassium ions is reduced; by doping the B<3+> with a small ionic radius to adjust the size of a migration channel of the potassium ions so that the migration channel can adapt to fast migration of the potassium ions; and in a production process, modification is conducted on surfaces of K2MgSi5O12 particles, so that the character of easy sintering is formed. Through synergistic effects, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm which is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Liquid-phase-synthesized K6.25Fe0.05Mg0.05Be0.2Al0.1Ti0.02Si1.68O7 potassium fast ion conductor and preparation method thereof

The invention relates to a liquid-phase-synthesized K6.25Fe0.05Mg0.05Be0.2Al0.1Ti0.02Si1.68O7 potassium fast ion conductor and a preparation method thereof. The method is characterized in that Al<3+>and Be<2+> are adopted to partially replace Si<4+> ions, and interstitial potassium ions are generated in crystals to reduce migration activation energy of potassium ions; the size of a migration channel of potassium ions is adjusted by doping Be<2+> with a small ion radius to adapt to rapid migration of potassium ions; a distorted lattice structure is formed through Ti <4+> partial doping to increase lattice defects to facilitate potassium ion conduction; cation vacancy is formed through partial doping of Fe<3+> and Mg<2+> to increase a migration path of potassium ions; and in the preparationprocess, modification is performed on the surfaces of K6Si2O7 particles to form characteristic of easy sintering. Due to the above synergistic effect, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Electric field induced crystallization K2.26Ba0.05Cu0.02MgBe0.2Zr0.05Si4.75O12 potassium fast ion conductor and preparation method thereof

The invention discloses an electric field induced crystallization K2.26Ba0.05Cu0.02MgBe0.2Zr0.05Si4.75O12 potassium fast ion conductor and a preparation method thereof. The electric field induced crystallization K2.26Ba0.05Cu0.02MgBe0.2Zr0.05Si4.75O12 potassium fast ion conductor is characterized in that Be<2+> is adopted to partially replace Si<4+> ions, high-concentration interstitial potassiumions are generated in crystals, and thus migration activation energy of the potassium ions is reduced advantageously; the size of a migration channel of the potassium ions is adjusted through small-ion-radius Be<2+> doping so as to adapt to rapid migration of the potassium ions; through Cu<2+> and Ba<2+> doping, cation vacancies are generated in lattices to increase a potassium ion migration path;through Zr<4+> partial doping, distorted lattice structures are formed to increase lattice defects, and thus potassium ion conduction is facilitated; and in the preparation process, the surfaces of K2MgSi5O12 particles are modified, and the easy-to-sinter characteristic is formed. Meanwhile, strong direct-current electric field induced crystallization is introduced to increase the crystallizationspeed, the crystallization temperature is decreased, and crystallization completeness is improved. Through the collaborative effect, the normal-temperature potassium ion conductivity of the potassiumfast ion conductor exceeds 5*10<-4> S / cm and is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

liquid phase synthesis K2.41MgBa0.05Cu0.02Be0.2B0.15Ti0.05Si4.6O12 potassium fast ion conductor and preparation method thereof

The invention relates to a liquid phase synthesis K2.41MgBa0.05Cu0.02Be0.2B0.15Ti0.05Si4.6O12 potassium fast ion conductor and a preparation method thereof. The method is characterized in that normaltemperature potassium ion conductivity exceeds 5*10<-4>S / cm; B4+ and Be2+ are utilized to partially replace Si4+ ions, and interstitial potassium ions are generated in the crystal to reduce potassiumion migration activation energy; the size of a migration channel of potassium ions is adjusted by doping Be2+ with a small ionic radius to accommodate rapid migration of the potassium ions; a distorted lattice structure is formed by partial doping of Ti4+ to increase lattice defects, and potassium ion conduction is facilitated; cationic vacancies are formed by partial doping of Cu2+ and Ba2+ to increase potassium ion migration paths; in the preparation process, surfaces of the K2MgSi5O12 particles are modified to form easy-sintering property; through these synergistic effects, the normal temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4>S / cm and is closer to the potassium ion conductivity of the liquid electrolyte.
Owner:NINGBO UNIV

Liquid-phase synthesis multi-ion doped K2MgSi5O12 potassium fast ion conductor and preparation method thereof

The invention relates to a liquid-phase synthesis multi-ion doped K2MgSi5O12 potassium fast ion conductor and a preparation method thereof. The liquid-phase synthesis multi-ion doped K2MgSi5O12 potassium fast ion conductor is characterized in that the stoichiometric formula is K2.24MgCa0.05Ba0.02Be0.2P0.02Ti0.02Si4.76O12; and the conductivity of potassium ions at room temperature is higher than 5*10<-4>S / cm. Be2+ partially replace Si4+ ions to produce interstitial potassium ions in a crystal, so as to reduce the activation energy of potassium ion migration. The size of the potassium ion migration channels is adjusted through doping of Be2+ with small ion radius in order to adapt to the rapid migration of potassium ions. A distorted lattice structure is formed through partial doping of Ti4+in order to increase lattice defects and facilitate potassium ion conduction. The electronic conductivity of the fast ionic conductor is further reduced through doping of P5+. Through partial dopingof Ca2+ and Ba2+, cation vacancies are formed to increase potassium ion migration paths. The surface of K2MgSi5O12 particles is modified in the preparation process to make the conductor easy to sinter. The synergistic effect makes the conductivity of potassium ions of the potassium fast ionic conductor exceed 5*10<-4>S / cm at room temperature, which is closer to the conductivity of potassium ions of liquid electrolyte.
Owner:NINGBO UNIV

P<5+> and Be<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor and preparation method thereof

The invention relates to a P<5+> and Be<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor and a preparation method thereof, wherein the stoichiometric formula is K[2+2x-y]MgBe[x]P[y]Si[5-x-y]O12, x is 0.1-0.15, y is 0.02-0.05, and the conductivity of the potassium ion at a room temperature exceeds 5*10<-4> S / cm. According to the present invention, by partially replacing Si<4+> ionswith Be<2+>, the gap potassium ions are generated in the crystal so as to reduce the potassium ion migration activation energy; through the P<5+> doping, the electron conductivity of the fast ion conductor is further reduced; by doping with the small ionic radius Be<2+>, the size of the potassium ion migration channel is adjusted so as to adapt to the rapid potassium ion migration; during the preparation, the surface of the K2MgSi5O12 particles is modified so as to form the easy-sintering property; and under the synergistic effects, the room temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm so as to be close to the potassium ion conductivity of the liquid-state electrolyte.
Owner:NINGBO UNIV

Liquid phase synthesis K<6.4>Fe<0.05>Cu<0.05>Be<0.2>Al<0.1>B<0.15>Ti<0.02>Si<1.53>O<7> potassium fast ion conductor and preparation method thereof

The invention relates to a liquid phase synthesis K<6.4>Fe<0.05>Cu<0.05>Be<0.2>Al<0.1>B<0.15>Ti<0.02>Si<1.53>O<7> potassium fast ion conductor and a preparation method thereof. The conductor is characterized in that: Al<3+>, Be<2+>, and B<3+> partially replace Si<4+> ions, and interstitial potassium ions are generated in crystals, so the activation energy of potassium ion migration is reduced; thesize of the migration channels of potassium ions is adjusted by Be<2+> and B<3+> doping with small ionic radius, so the rapid migration of potassium ions is adapted; a distorted crystal lattice structure is formed by partial doping of Ti<4+>, so lattice defects are increased and potassium ion conduction is facilitated; cation vacancies are formed by partial doping of Fe<3+> and Cu<2+>, so the potassium ion migration paths are increased; and in the preparation process, the surface of K6Si2O7 particles is modified, so an easy-sintering property is formed. Through synergistic effects, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 6*10<-4>S / cm, and is closer to the potassium ion conductivity of the liquid electrolyte.
Owner:NINGBO UNIV

Glassy-state potassium-doped fast ion conductor K2O. 4SiO2 and preparation method thereof

The invention relates to a glassy potassium doped fast ion conductor K2O. 4SiO2 and a preparation method thereof, and the glassy potassium doped fast ion conductor K2O. 4SiO2 is characterized in thatthe stoichiometric formula is (K2O)1-x. x (MO). 4SiO2, x is equal to 0.05-0.10, and M is one of Mn and Ni; and a random K2O. 4SiO2 structure is adopted, and transition metal ions are synergistically doped, so that the conduction activation energy of potassium ions is further reduced, the activity and conductivity of the potassium ions are improved, the normal-temperature lithium ion conductivity of the potassium fast ion conductor exceeds 3*10<-4> S / cm, the glassy potassium doped fast ion conductor K2O. 4SiO2 can be used as a potassium fast ion conductor with excellent performance, and the conductivity is closer to the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

Liquid-phase synthesis K<2.25>MgBe<0.1>Al<0.1>P<0.05>Ti<0.05>Si<4.7>O<12> potassium fast ion conductor and preparation method thereof

The invention discloses a liquid-phase synthesis K<2.25>MgBe<0.1>Al<0.1>P<0.05>Ti<0.05>Si<4.7>O<12> potassium fast ion conductor and a preparation method thereof. The liquid-phase synthesis K<2.25>MgBe<0.1>Al<0.1>P<0.05>Ti<0.05>Si<4.7>O<12> potassium fast ion conductor is characterized in that electrical conductivity of a potassium ion is greater than 5*10<-4>S / cm at room temperature; Al<3+> and Be<2+> are used for partially replacing Si<4+> ions, and interstitial potassium ions are generated in a crystal to reduce the activation energy of potassium ion migration; the electronic conductivity of the fast ion conductor is further reduced through P<5+> doping; the size of a migration channel of the potassium ion is adjusted through doping of Be<2+> with a small ion radius so as to adapt to the rapid migration of the potassium ions; a distorted lattice structure is formed through Ti<4+> partial doping to increase the lattice defect to facilitate potassium ion conduction; and during the preparation process, the surfaces of K2MgSi5O12 particles are modified to form an easy-to-sinter characteristic. According to the synergistic effects, the electrical conductivity of the potassium ions atthe room temperature of the potassium fast ion conductor is greater than 5*10<-4>S / cm and closer to the electrical conductivity of the potassium ions of liquid electrolyte.
Owner:NINGBO UNIV

A liquid phase synthesis k 2.25 mgbe 0.1 al 0.1 p 0.05 ti 0.05 the si 4.7 o 12 Potassium fast ion conductor and preparation method thereof

A liquid-phase synthetic K 2.25 MgB 0.1 Al 0.1 P 0.05 Ti 0.05 Si 4.7 o 12 Potassium fast ion conductor and preparation method thereof, characterized in that: normal temperature potassium ion conductivity exceeds 5.10 ‑4 S / cm. Using Al 3+ 、Be 2+ Partial replacement of Si 4+ Ions, generate interstitial potassium ions in the crystal and reduce the activation energy of potassium ion migration; through P 5+ Doping further reduces the electronic conductivity of fast ion conductors; through the small ionic radius Be 2+ Doping adjusts the size of the migration channel of potassium ions to adapt to the rapid migration of potassium ions; through Ti 4+ Partial doping forms a distorted lattice structure to increase lattice defects, which is conducive to the conduction of potassium ions; and during the preparation process at K 2 MgSi 5 o 12 The surface of the particles is modified to form easy sintering properties. These synergistic effects make the normal temperature potassium ion conductivity of this potassium fast ion conductor exceed 5·10 ‑4 S / cm, which is closer to the potassium ion conductivity of the liquid electrolyte.
Owner:NINGBO UNIV

P<5+> and Al<3+> ion collaboratively doped K6Si2O7 potassium fast ion conductor and preparation method thereof

The invention discloses a P<5+> and Al<3+> ion collaboratively doped K6Si2O7 potassium fast ion conductor and a preparation method thereof. The P<5+> and Al<3+> ion collaboratively doped K6Si2O7 potassium fast ion conductor is characterized in that the stoichiometric equation is K<6-x+y>P<x>Al<y>Si<2-x-y>O7, wherein x is within 0.02 to 0.05, and y is within 0.1 to 0.2; and the normal-temperature potassium ion conductivity exceeds 4*10<-4> S / cm. Al<3+> is adopted to partially replace Si<4+> ions, and interstitial potassium ions are generated in crystals to reduce migration activation energy ofthe potassium ions; the electronic conductivity of the fast ion conductor is further lowered through P<5+> doping; and in the preparation process, the surfaces of K6Si2O7 particles are modified, and the easy-to-sinter characteristic is formed. Through the collaborative effect, the normal-temperature potassium ion conductivity of the potassium fast ion conductor exceeds 4*10<-4> S / cm and is closerto the potassium ion conductivity of a liquid electrolyte.
Owner:NINGBO UNIV

P<5+>, Al<3+>, Be<2+> and Zn<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor and preparation method thereof

The invention relates to a P<5+>, Al<3+>, Be<2+> and Zn<2+> synergistically doped K2MgSi5O12 potassium fast ion conductor and a preparation method thereof, wherein the stoichiometric formula is K[2+2x+y-z-2m]MgBe[x]Al[y]P[z]Zn[m]Si[5-x-y-z]O12, x is 0.05-0.15, y is 0.05-0.15, z is 0.01-0.03, m is 0.01-0.03, and the conductivity of the potassium ion at a room temperature exceeds 5*10<-4> S / cm. According to the present invention, by partially replacing Si<4+> ions with Al<3+> and Be<2+>, the gap potassium ions are generated in the crystal so as to reduce the potassium ion migration activation energy; through the P<5+> doping, the electron conductivity of the fast ion conductor is further reduced; by doping with the small ionic radius Be<2+>, the size of the potassium ion migration channel isadjusted so as to adapt to the rapid potassium ion migration; by partially replacing the potassium ions with Zn<2+>, the cation vacancy is added so as to increase the potassium ion migration channels; during the preparation, the surface of the K2MgSi5O12 particles is modified so as to form the easy-sintering property; and under the synergistic effects, the room temperature potassium ion conductivity of the potassium fast ion conductor exceeds 5*10<-4> S / cm so as to be close to the potassium ion conductivity of the liquid-state electrolyte.
Owner:NINGBO UNIV
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