Magnetic field induced deposition method for preparing magnetic nano-gap electrode

Abstract

The invention is a method prepares magnetic nanogap electrode by magnetic field induced guided precipitation which relates to a process technology of nanostructure and nanodevice. The method is by selective precipitation and the magnetic field along the electrode pair synchrostep oriented growing magnetic metal on the normal litho electrode. Narrow the gap between the litho electrode pairs to nanometer grade without widen the side of the electrode so to achieve simple and cheap production of the magnetic nanogap electrode. The prepare method is: first, produce prototype electrode with gap of micrometer or sub-micrometer grade; assemble bi-function molecular and bonding reaction initiator on the surface of the electrode so the surface has got catalysis activity.; put above electrode into the chemical plating agent of magnetic metal or alloy, meanwhile, exert a magnetic field along the electrode pairs to synchrosteply orient the magnetic metal or alloy to ferentially precipitate and grow at the electrode pairs' narrow ends to obtain the magnetic electrode with nanogap.

Description

technical field [0001] The invention relates to a processing technology for nanostructures and nanodevices, in particular to a method for preparing magnetic nanogap electrodes by selective chemical deposition induced by a magnetic field, and belongs to the technical field of nanodevices processing. Background technique [0002] Nanoelectronic devices, whose characteristic size is within the nanoscale (1-100nm), no longer follow the basic operating laws of traditional microelectronics, and the volatility and quantum effects of electrons will play an important role in such devices. Breakthroughs in key technologies are expected to become new economic growth points and will have a profound impact on all aspects of human society. Nanofabrication technology is the basis for the development of nanoelectronic devices. [0003] Nano-gap electrodes are a key structure or basis for the development of nanoelectronic devices, especially single-electron devices. Electron beam etching (...

AI Technical Summary

Problems solved by technology

Among them, the electroplating method and the electroless plating method both reduce the gap by the online deposition and growth of metal on the electrode pair, but at the same time increase the lateral width of the electrode, and the electroplating method needs to The voltage applied to the leads is only suitable for individual operations on specific devices; the electromigration method not only requires electrical connection between the leads at both ends of the prototype electrode, but also requires that the gap between the prototype electrode pair should not be too large (usually in the quasi-nano or sub-micron scale, The prior art uses the electron beam etching method to prepare its prototype electrode structure)

[0004] Magnetic nanogap electrodes have special application prospects in the manipulation and orderly assembly of magnetic nanoparticles, electromagnetic control research of biomolecules, detection and sensing technology, and research on electron transport characteristics. However, magnetic nanogap electrodes are still very rare at present. The preparation methods involved are also limited to electroplating and electroless plating, and related application research is greatly limited