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(Ba,Zr)TiO3 ferroelectric film with optimized performance and its preparing method

A ferroelectric thin film and performance technology, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, circuits, electrical components, etc., can solve the problems of thin film dielectric loss and large leakage current, and achieve thin film performance optimization and high performance. The effect of dielectric constant

Inactive Publication Date: 2009-02-04
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In general, ferroelectric thin films are prepared directly on silicon substrates, so the dielectric loss and leakage current of the obtained thin films are relatively large.

Method used

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  • (Ba,Zr)TiO3 ferroelectric film with optimized performance and its preparing method
  • (Ba,Zr)TiO3 ferroelectric film with optimized performance and its preparing method
  • (Ba,Zr)TiO3 ferroelectric film with optimized performance and its preparing method

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Embodiment 1～5

[0016] Preparation of (Ba, Zr)TiO with a total thickness of 400nm with a seed layer thickness of 0nm, 10nm, 20nm, 40nm and 90nm 3 ferroelectric thin film.

[0017] Synthesis of Ba(Zr,Ti)O with Zr / Ti ratio of 0.3 / 0.7 3 The precursor solution of the thin film of composition, the chemical raw material adopted is barium acetate [Ba(CH 3 COO) 2 ], zirconium isopropoxide [Zr(OC 3 h 7 ) 4 ] and titanium isopropoxide [Ti(OC 3 h 7 ) 4 ], the solvent is glacial acetic acid and ethylene glycol, and acetylacetone is used as a chelating agent. Dissolve barium acetate in glacial acetic acid, heat to boiling and then cool to 60°C for use. Dissolve titanium isopropoxide with an appropriate amount of ethylene glycol ether, and add an appropriate amount of acetylacetone as a chelating agent, keep stirring for 20 minutes to make it a transparent solution, then add a certain amount of zirconium isopropoxide, and keep stirring for 20 minutes until fully mixed , and heated to 60°C, mixed ...

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Abstract

The present invention relates to a method for preparing performance-optimized (Ba,Zr)TiO3 ferroelectric film. Said method includes the following steps: firstly, using sol-gel method to prepare precursor solution, then coating substrate with said precursor solution to prepare seed crystal layer, then coating said seed crystal layer with said precursor solution to prepare film with required thickness, finally making said film undergo the process of heat treatment for 25-35 min, at 650-750 deg.C, and sputtering electrode so as to obtain the invented product.

Description

technical field [0001] The invention relates to a ferroelectric thin film, in particular to the technical field of a method for preparing barium zirconium titanate (BZT) ferroelectric thin film by chemical method. Background technique [0002] Barium strontium titanate (Ba, Sr)TiO 3 (BST) ferroelectric thin film has become a hotspot in international ferroelectric thin film research because of its application in VLSI, but BST thin film has the defect of large leakage current under low electric field. As an alternative material to BST there are (Ba 1-x Sr x )(Ti 1-y Zr y )O 3 (BSTZ), Ba(Zr,Ti)O 3 (BZT) and Ba(Ti, Sn)O 3 (BTS) etc. Barium zirconate titanate Ba(Ti, Zr)O 3 (BZT) ferroelectric thin film is the BaTiO 3 (ABO 3 ) The perovskite structure is replaced by the B site. The BZT film has a low leakage current and also has good dielectric properties at high frequencies. Therefore, it can be applied to the storage capacitor on the next generation DRAM and the iron ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05D1/38B05D5/12H01L41/22H10N30/078
Inventor 翟继卫高成
Owner TONGJI UNIV