Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process

A planar imaging and chemical etching technology, which is applied in sustainable manufacturing/processing, final product manufacturing, semiconductor/solid-state device manufacturing, etc., to achieve the effects of high flatness, good selectivity, and simple operation of the etched surface

Inactive Publication Date: 2009-03-11
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no literature that discloses the relevant reports on the use of chemical etching in the fabrication process of zinc oxide UV focal plane imaging columns.

Method used

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  • Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process
  • Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process
  • Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A chemical etching method used in the manufacturing process of zinc oxide ultraviolet focal plane imaging array. The method first uses a conventional photolithography method to make figure 1 The zinc oxide material mask is shown, and the Nikon ECLIPSE LV150 industrial optical microscope is used for observation, and then, the mass concentration of 10% ammonium chloride (NH 4 Cl) solution for etching. When the substrate is to be etched, use Nikon ECLIPSELV150 industrial optical microscope to observe, such as image 3 As shown, the mask of the zinc oxide material is intact, which definitely proves that the etching selectivity of ammonium chloride is very good. Then, after removing the photoresist on the mask, use Nikon ECLIPSE LV150 industrial optical microscope to observe, such as Figure 4 As shown, a flat etched surface is finally obtained on the zinc oxide film; Figure 5 As shown, a better aspect ratio of the zinc oxide ultraviolet focal plane imaging array can be obtain...

Embodiment 2

[0031] A chemical etching method used in the manufacturing process of zinc oxide ultraviolet focal plane imaging array. First, the conventional photolithography method is used to manufacture such as figure 1 The zinc oxide material mask is shown, and the Nikon ECLIPSE LV150 industrial optical microscope is used for observation, and then, the mass concentration of 5% ammonium chloride (NH 4 Cl) solution for etching. When the substrate is to be etched, use Nikon ECLIPSELV150 industrial optical microscope to observe, such as Figure 6 As shown, it is definitely proved that ammonium chloride has no etching effect on the mask photoresist. Then, after removing the photoresist on the mask, use Nikon ECLIPSELV150 industrial optical microscope to observe, such as Figure 7 As shown, a flat etched surface and a better aspect ratio of the zinc oxide ultraviolet focal plane imaging array are finally obtained on the zinc oxide film. The thickness of the zinc oxide layer is 1.3 μm, the etching...

Embodiment 3

[0033] A chemical etching method used in the manufacturing process of zinc oxide ultraviolet focal plane imaging array. First, the conventional photolithography method is used to manufacture such as figure 1 The zinc oxide material mask is shown, and the Nikon ECLIPSE LV150 industrial optical microscope is used for observation, and then, the mass concentration of 5% ammonium chloride (NH 4 The Cl) solution was etched after heating it in a water bath at 30°C. When the mask substrate is to be etched, use Nikon ECLIPSE LV150 industrial optical microscope to observe, such as Figure 8 As shown, it is definitely proved that ammonium chloride has no etching effect on the mask photoresist. After removing the photoresist on the mask, use Nikon ECLIPSE LV150 industrial optical microscope to observe, such as Picture 9 As shown, a flat etched surface and a better aspect ratio of the zinc oxide ultraviolet focal plane imaging array are finally obtained on the zinc oxide film. The thickness o...

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Abstract

This invention discloses a chemical etching method of zinc oxide material in production of ultraviolet detection focal plane imaging array, in which firstly prepare zinc oxide material mask and then make it conduct etching through ammonium chloride aqueous solution, for improving etching effect the etching liquid is heated in water bath. The etching method using ammonium chloride solution as an etching agent, it has the following advantages: (1) high flatness of etching surface (2) very good etching slectivity (3) can reach very good aspect ratio requirements; (4) has no impurity ions pollution to the sample to be etched and no effect to part charateristics (5) only change the concentration of ammonium chloride variable etching rates can be obtained while ensuring the etching surface flat and good aspect ratio and meanwhile operation is very simple. (6) the etching depth can be controlled by controlling etching time.

Description

Technical field [0001] The invention belongs to the field of semiconductor device manufacturing technology, and relates to a chemical etching method, in particular to a wet etching method of zinc oxide material in the manufacturing process of zinc oxide ultraviolet focal plane imaging array. Background technique [0002] Ultraviolet detectors have a wide range of applications in both military and civilian use, including missile launch detection, flame sensors, ultraviolet radiation calibration and monitoring, chemical and biological analysis, optical fiber communications, and astronomical research. In these applications, high response, fast response time and high signal-to-noise ratio are the device parameters that people are pursuing. Recently, wide band gap materials have been widely used to improve the responsivity and reliability of UV detectors. Among them, zinc oxide materials have received extensive attention and research due to their relatively high response to ultraviole...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/467H01L31/18
CPCY02P70/50
Inventor 张景文高群侯洵
Owner XI AN JIAOTONG UNIV
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