Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro-socle girder resonator with low temperature cross sensitivity

A technology of micro-cantilever beam and resonator, applied in the field of micro-cantilever beam resonator and cantilever beam resonator, can solve the problems of increasing the complexity and cost of chip structure, packaging and detection system, and not fully satisfying high-precision measurement, etc., to achieve The temperature compensation method is simple and easy, the structure is simple, and the effect of low cost

Inactive Publication Date: 2009-12-16
CHINA JILIANG UNIV +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of the reference cantilever beam needs to establish an independent closed-loop circuit for it, which also greatly increases the complexity and cost of the chip structure, packaging and detection system
In addition, only relying on the reference beam to suppress the influence of ambient temperature cannot fully meet the requirements of high-precision measurement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro-socle girder resonator with low temperature cross sensitivity
  • Micro-socle girder resonator with low temperature cross sensitivity
  • Micro-socle girder resonator with low temperature cross sensitivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] This embodiment is to manufacture a silicon / silicon dioxide cantilever beam resonator for photothermal excitation / optical signal detection. Among them, the thickness of the silicon layer [4] is 1.3 microns, the thickness of the silicon dioxide layer [3] is 1 micron, and its structure is as attached figure 1 (a) shown. Its production process is as follows (see attached figure 2 ):

[0023] (1) The original silicon wafer is a {100} double-sided polished SOI silicon wafer with a thickness of 400 microns. If the thickness of the silicon dioxide buried layer [2] is t microns, the thickness of the silicon layer [4] should be (1.8+0.45t) microns. (See figure 2 .[1])

[0024] (2) Thermal oxidation, the thickness of the oxide layer [3] is (1+t) microns. (See figure 2 .[2])

[0025] (3) The pattern of the cantilever beam is photolithographically etched on the front, and the silicon dioxide mask in the forming groove [8] around the beam is corroded by slow-release hydro...

Embodiment 2

[0032] This embodiment is a silicon dioxide / silicon nitride cantilever beam resonator for photothermal excitation / optical signal detection. Its structure is as attached figure 1 (b) shown. Its production process is as follows (see attached image 3 ):

[0033] (1) The original silicon wafer is an ordinary silicon wafer with {100} plane [1]. (See image 3 .[1])

[0034] (2) thermal oxidation. (See image 3 .[2])

[0035] (3) Photoresist protection on the back side, cantilever beam pattern photolithography on the front side, and slow-release hydrofluoric acid (BOE) corroding the silicon dioxide in the forming groove [8] around the beam. (See image 3 .[3])

[0036](4) LPCVD deposited silicon nitride film [5], the thickness of which is 0.9 to 1.2 times the thickness of the silicon dioxide layer [3]. For backside photoresist protection, use the same mask to etch the cantilever beam pattern on the front side, and etch away the silicon nitride film [5] in the forming groo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a micro-cantilever beam resonator with lower resonance frequency temperature coefficient. The resonator adopts a silicon dioxide / silicon or silicon dioxide / silicon nitride double-layer structure to realize temperature self-compensation of the resonant frequency of the cantilever beam. Theoretical calculation and experimental verification show that the optimal thickness ratio of silicon and silicon dioxide films for silicon / silicon dioxide double-layer cantilever beam resonators is 1.1 to 1.7, and the ratio of silicon dioxide / silicon nitride double-layer cantilever beam resonators is The optimal thickness ratio of silicon oxide film and silicon nitride film is 0.9-1.2, wherein silicon dioxide is grown by thermal oxidation method, and silicon nitride is made by low pressure vapor deposition method (LPCVD). The low-temperature cross-sensitivity micro-cantilever resonator disclosed by the present invention has the advantages of simple temperature compensation method, simple structure, low cost, and no need to introduce additional temperature sensors, reference cantilever beams and compensation circuits.

Description

technical field [0001] The invention relates to a micro-cantilever beam resonator with low temperature cross-sensitivity, in particular to a cantilever beam resonator which realizes the temperature self-compensation of the resonant frequency by using the difference in the temperature coefficient of Young's modulus and density of different semiconductor materials, belonging to field of microelectromechanical systems. Background technique [0002] Sensors are the basis of test instruments and detection systems. Traditional sensors measure non-electric quantities such as pressure, temperature, and displacement by changing electrical quantities such as resistance, capacitance, or inductance, and output them as voltage and current signals. An A / D converter needs to be added between the sensor and the control circuit, which not only reduces the reliability, response speed and measurement accuracy of the system, but also increases the cost. The output of the resonant sensor is a f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G12B21/00B81B7/00
Inventor 韩建强李青李昕欣王跃林韩安太孙延伟
Owner CHINA JILIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com