Method for preparing Nano zinc oxide film with different appearances through solution technique

Abstract

This invention discloses a solution method for preparing ZnO nanofilms with different morphologies. The molecular beam epitaxy method has a high cost, thus is not suitable for mass production. The thermal evaporation method has a poor controllability due to high temperature requirement. The method comprises: placing electrically conductive glass containing ZnO seeds into a mixture of Zn(NO3)2 and urotropine with pH value in 2.6-10.5, growing under refluxing at 85-95 deg.C for 6 h, washing with distilled water, and drying to obtain ZnO thin films with different sizes and morphologies. Since the whole reaction process is conducted in an inorganic solution, the method has such advantages as low cost, easy operation, no pollution, and controllable ZnO thin film morphologies. The one-dimensional ZnO thin film prepared in quasi-neutral condition can be used in solar cells, photoelectrical devices, sensors and field emitters.

Description

technical field [0001] The invention belongs to the field of semiconductor nano film preparation, in particular to a method for preparing nano zinc oxide films with different shapes by a solution method, and belongs to the technical field of inorganic material preparation technology. Background technique [0002] Morphological control of inorganic materials has aroused great interest due to the important influence of factors such as structure, size, and morphology on material properties and applications. In particular, nano-semiconductor materials have quantum confinement effects and have potential applications in optoelectronic devices, photoluminescence, and biological images, which increases the dependence of semiconductor materials on the size of optoelectronic properties. At the same time, the high integration and miniaturization of devices also put forward more stringent requirements on the size and shape of materials. The research on morphology control not only requi...

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Problems solved by technology

[0004] In recent years, there have been many reports on the preparation methods of zinc oxide film control. So far, there are different preparation methods such as chemical, physical and electrochemical, such as Peidong Yang et al. Synthesized ZnO nanowires (Yang, Pei-dong, Yan, Hao-quan, Mao, Sa-muel, et al. Controlled growth of ZnO nanowires and theiroptical properties[J]. Adv Fund Mater, 2002, 12(5): 323.), the gas-liquid-solid catalytic reaction growth method is a relatively good method by controlling the initial position and thickness of the catalyst alloy cluster or the gold film to control the position of the ZnO nanowire array and the diameter of the nanowire, respectively, but Improvements are still needed in the controllability of nanostructures; Hiroshi Funakubo et al. have studied polycrystalline Al 2 o 3 , rutile (001) surface, MgO (100) surface, sapphire (102) and (001) surface, and the structure of ZnO film grown on amorphous silicon oxide substrates (Wenas W W, Yamada A, Konagai M et al.Jpn J ApplPhys, 1994, 33: L283), although molecular beam epitaxy grows thin films with good quality, the cost is too high and is not suitable for large-scale production; thermal evaporation is easy to operate and can prepare various shapes due to its low cost Such advantages have become one of the main methods for preparing ZnO nanostructures, but its disadvantages are: high temperature requirements, poor controllability

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