Surface treatment method for copper and copper
A surface treatment, copper surface technology, applied in the direction of metal material coating process, etc., can solve the problems of reducing insulation reliability, insulation reliability, short circuit, etc., to achieve the effect of ensuring bonding strength and improving reliability
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[0148] [Example]
[0149] Hereinafter, the present invention will be described in detail based on examples, but the present invention is not limited thereto.
Embodiment 1
[0151] In order to evaluate the reliability of the semiconductor package produced using the copper surface treatment of the present invention, a semiconductor package sample was produced by the following method.
[0152] (Process a)
[0153] Prepare a 0.4mm thick soda lime glass substrate (thermal expansion coefficient 11ppm / °C) as the core substrate 100, form a 200nm copper thin film on one surface by sputtering, then electroplate with copper to a thickness of 10μm, and then sputter The irradiation was carried out using an apparatus model MLH-6315 manufactured by Nippon Vacuum Technology Co., Ltd., under Condition 1 described below.
[0154] Condition 1
[0155] Current: 3.5A
[0156] Voltage: 500V
[0157] Argon flow: 35SCCM (0.059Pa m 3 / s)
[0158] Pressure: 5×10 -3 Torr (6.6×10 -1 Pa)
[0159] Film forming speed: 5nm / sec
[0160] Then, an etch resist is formed on the portion to be the first wiring 106a, etched using a ferric chloride etching solution to remove th...
Embodiment 2
[0197] In addition to forming copper oxide crystals on the surface of the second wiring 106b in (step d-2), before forming the build-up layer 104 in (step d-3), wash the surface of the second wiring 106b with water for 5 minutes In addition to the reduction treatment process of immersing in the reduction treatment solution HIST-100D (manufactured by Hitachi Chemical Industry Co., Ltd., trade name) at 40°C for 3 minutes, washing with water for 10 minutes, and drying at 85°C for 30 minutes, the remaining In the same manner as in Example 1, a substrate for mounting a semiconductor chip for a fan-in BGA and a semiconductor package were produced.
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