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High heat-conductive diamond-copper composite encapsulating material and method for making same

A technology for encapsulating materials and diamonds, which is applied in chemical instruments and methods, and other chemical processes, etc. It can solve the problems that the detailed preparation process is not disclosed, affect the structure and performance of materials, and achieve simple and reliable preparation methods, improve wettability, and increase strength. Effect

Inactive Publication Date: 2010-08-18
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at a temperature of 900°C, diamond particles are easily carbonized to generate CO or CO 2 , affecting the structure and properties of the material
K.hanada prepared a diamond-copper composite material by powder metallurgy, with a thermal conductivity of 400W / (m K), but the detailed preparation process has not been disclosed

Method used

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  • High heat-conductive diamond-copper composite encapsulating material and method for making same
  • High heat-conductive diamond-copper composite encapsulating material and method for making same
  • High heat-conductive diamond-copper composite encapsulating material and method for making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] ①Firstly, the raw material is pretreated, copper powder (-200 mesh) reduction treatment: the copper powder raw material is reduced with hydrogen in a reduction furnace, the reduction temperature is 500 ° C, and the time is 2 hours; the surface of the diamond particles (average particle size 5 μm) is electroless Ni-plated -W, the coating thickness is 0.8 μm, the electroless plating process conditions are shown in Table 1, and the SEM photo of diamond particles after Ni-W electroless plating is shown in Figure 1;

[0033] ② Mixing: Weigh 95g of the pretreated copper powder, add it together with 5g of electroless Ni-W-plated diamond particles into a polyurethane ball mill tank, mix in a three-dimensional mixer, and mix for 3 hours;

[0034] ③Hot-press sintering: put the mixture into a hot-pressed graphite mold, put it into a vacuum hot-pressed sintering furnace, sintering temperature is 750°C, pressing pressure is 20MPa, and sintering time is 1 hour;

[0035] ④Material pro...

Embodiment 2

[0037] ①Firstly, pre-treat the raw materials, copper powder (-200 mesh) reduction treatment: reduce the copper powder raw material with hydrogen in a reduction furnace, the reduction temperature is 300 ° C, and the time is 3 hours;

[0038] ② Mixing: Weigh 94g of pretreated copper powder, 5g of diamond powder (10μm), and 1g of tungsten powder (0.1μm) into a polyurethane ball mill tank, mix in a three-dimensional mixer, and mix for 5 hours;

[0039] ③Hot-press sintering: put the mixture into a hot-pressed graphite mold, put it into a vacuum hot-pressed sintering furnace, sintering temperature is 500°C, pressing pressure is 5MPa, and sintering time is 3 hours;

[0040] ④Material processing: Wire cutting was used to process the hot-pressed sintered product into the required size for analysis and testing. The test results are shown in Table 2, and the metallographic photos (634 times) are shown in Figure 3.

Embodiment 3

[0042] ① First, pre-treat the raw materials, copper powder (-200 mesh) reduction treatment: reduce the copper powder raw material with hydrogen in a reduction furnace, the reduction temperature is 700 ° C, and the time is 0.5 hours;

[0043] ② Mixing: Weigh 60g of pretreated copper powder, 30g of diamond powder (1.0μm), 5g of iron powder (2.0μm), and 5g of molybdenum powder (1.0μm) and add them to the polyurethane ball mill tank together. Mixing, mixing time 5 hours;

[0044] ③Hot-press sintering: put the mixture into a hot-pressed graphite mold, put it into a vacuum hot-pressed sintering furnace, sintering temperature is 950°C, pressing pressure is 30MPa, and sintering time is 0.5 hours;

[0045] ④Material processing: The hot-pressed sintered product was processed into the required size by wire cutting for analysis and testing. The testing results are shown in Table 2.

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Abstract

The invention discloses a diamond-copper compound encapsulating material and producing methods for the material. The substrate is copper. The content of the diamond particles for improving heat transmission and increasing strength is 5-60% by weight, the grain size of the particles is 1 swung dash 150 micrometer. The additives are Cr, Ni, W, Ti, Fe, Ni, Mo, and Ta or Nb, the content is 0.1-10% byweight. Two methods are used to prepare the material: (1) Powder pre-treating, mixing, hot pressing and forming, parting and machining; (2) Powder pre-treating, mixing, pressing and forming, packing,cold equal static-pressure and hot equal static-pressure sintering, parting and machining. The material is of high heat conductivity and low heat expansion coefficient. The invention is a diamond-copper compound encapsulating material with high heat conductivity and low heat expansion coefficient.

Description

technical field [0001] The invention relates to a diamond-copper composite packaging material, and also relates to a preparation method of the composite packaging material. Background technique [0002] Since the 1980s, microelectronic packaging technology and packaging materials have gradually become one of the important factors affecting the development of microelectronic technology. In the integrated circuit, the packaging material plays the role of fixing the chip, protecting the internal components, transmitting electrical signals and dissipating the heat of the components, and is a key component of the integrated circuit. With the development of integrated circuits towards high density, miniaturization, and multi-function, the requirements for electronic packaging materials are becoming more and more stringent. At present, the commonly used packaging materials can no longer meet the development needs of microelectronics technology, mainly as follows: ① Although the th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/10
Inventor 易丹青李荐侯亚平叶国华潘峥嵘郑利强
Owner CENT SOUTH UNIV
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