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Insulating film

A technology of insulating films and devices, applied in the direction of organic insulators, plastic/resin/wax insulators, electrical components, etc., can solve problems such as cracking

Inactive Publication Date: 2008-09-03
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, it was confirmed by Raman analysis that the ring structure of the cyclic polysiloxane compound was broken during the curing step

Method used

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preparation example Construction

[0085] In the production method of the composition of the present invention, the polymerization of compound (I) is preferably followed by treatment such as removal of high molecular components by filtration or centrifugation or purification by column chromatography.

[0086] Specifically, it is preferable that, as a preparation method of the composition of the present invention, the solid formed by the polymerization reaction is subjected to reprecipitation treatment to remove low-molecular components and residual compound (I) therefrom, thereby increasing Mn and reducing compound (I) (I) residues.

[0087] The term "reprecipitation treatment" as used herein refers to the collection by filtration of the composition of the present invention from which the composition of the present invention has been removed by adding a poor solvent (a solvent in which the composition of the present invention is substantially insoluble) to the reaction solvent In the reaction mixture which was ...

Embodiment 1

[0157] To 361g of ethyl acetate, add 1g of 8 H 2 C=CH-Si(O 0.5 ) 3 Cage silsesquioxane composed of units, 10 H 2 C=CH-Si(O 0.5 ) 3 A caged silsesquioxane consisting of units and 12 H 2 C=CH-Si(O 0.5 ) 3 A mixture of cage silsesquioxanes composed of cells (model: OL1170, product of Hybrid Plastics), and the resulting mixture was heated to reflux in a nitrogen stream (internal temperature: 78° C.). As a polymerization initiator, a solution obtained by diluting 4 µl of "Luperox 11" (trade name; product of ARKEMA YOSHITOMI, ten hours-half-life temperature: 58°C) with 4 ml of ethyl acetate was added dropwise over 5 hours. After the dropwise addition was complete, the reaction mixture was heated to reflux for 2 hours. After cooling to room temperature, the mixture was concentrated under reduced pressure to a liquid weight of 2 g. Then, 20 ml of methanol was added, and the mixture was stirred for 1 hour. The reaction mixture was filtered and dried to give 0.95 g of a solid....

Embodiment 2

[0162] To 52.8 g of butyl acetate, 1 g of Example Compound (I-d) (product of Aldrich) was added. While heating to reflux (internal temperature: 127°C) in a nitrogen stream, 4 mg of "V-601" (trade name; product of Wako Pure Chemical Industries, ten hours-half-life temperature: 66°C) was added dropwise over 2 hours. ) was diluted with 4 ml of butyl acetate as a polymerization initiator. After the addition was complete, the reaction mixture was heated to reflux for 1 hour. As a polymerization inhibitor, 20 mg of 4-methoxyphenol was added. After cooling to room temperature, the mixture was concentrated under reduced pressure to a liquid weight of 2 g. Then, 20 ml of methanol was added, and the mixture was stirred for 1 hour. The solid was collected by filtration and dried. This solid was dissolved in 10 ml of tetrahydrofuran. While stirring, 1.8 ml of water were added dropwise. After stirring for 1 hour, the supernatant was removed by decantation, and 10 ml of methanol was a...

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Abstract

An insulating film for semiconductor devices is obtained by curing, on a substrate, a high molecular compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents and having a cyclic siloxane structure, wherein the structure of the cage-type silsesquioxane compound is not broken by curing, and the breakage of the cage structure can be detected by observing a peak at approximately 610 cm<-1 >in Raman spectrum of the film after curing.

Description

technical field [0001] The present invention relates to an insulating film, and more particularly, to an insulating film having a sufficiently uniform thickness and having excellent dielectric properties as an interlayer insulating film material in semiconductor devices and the like. Background technique [0002] So far, silicon dioxide (SiO2) formed by vacuum methods such as chemical vapor deposition (CVD) 2 ) films are used as interlayer insulating films for semiconductor devices and the like. For the purpose of forming a more uniform interlayer insulating film, a coating-type insulating film mainly composed of a hydrolysis product of tetraalkoxysilane, called an SOG (Spin on Glass) film, has recently been used. With the increase in the integration density of semiconductor devices and the like, low dielectric constant interlayer insulating films mainly composed of polysiloxane called organic SOG are being developed. In particular, a siloxane compound having a ring struct...

Claims

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Application Information

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IPC IPC(8): H01L23/532H01L21/312
CPCH01L21/3122H01L21/02126H01L21/02203H01L21/02216H01L21/02282H01L21/02348H01L21/02351H01L21/316H01L21/31695G03F7/004H01B3/46H01L21/31
Inventor 森田健介割石幸司浅野明村松诚
Owner FUJIFILM CORP
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