Electrically conductive barrier material for copper wiring and preparing method thereof

Abstract

The invention provides a conducting barrier layer material used for copper interconnection, which consists of a silicon substrate and a conducting barrier layer, and is characterized in that: the conducting barrier layer material is manufactured by growing an amorphous state Ti-Al binary alloy film on the matrix of the silicon substrate by adopting a magnetron sputtering method, then in-situ growing a Cu film on the Ti-Al binary alloy film. The conducting barrier layer material of the invention utilizes the Ti-Al material and the good thermodynamic stability of the Si and the Cu; the amorphous Ti-Al film does not have a proliferation channel, which can effectively avoid the proliferation of the Cu to the silicon substrate in the growing process; the Ti-Al film has the advantages of low cost, good thermodynamic stability, good coherence with the Si substrate, good electrical conductivity and high melting point, etc. The research discovers that the amorphous state Ti-Al film prepared by using the magnetron sputtering method can avoid the Cu and the Si from generating reaction in high temperature annealing, thus playing the role of the barrier layer used for copper interconnection. The conducting barrier layer material of the invention is easy to be controlled, has low request for equipment, can be compatible with semiconductor technology, and is widely applied to the micro-electronic field.

Description

technical field [0001] The invention relates to a barrier layer material for copper interconnection and a preparation method, which is particularly suitable for copper interconnection technology in VLSI, and belongs to the technical field of manufacturing or processing methods of microelectronic devices or parts thereof. Background technique [0002] At present, integrated circuit technology has rapidly developed to the ultra-large-scale integrated circuit (ULSI) stage, device performance is developing towards higher speed and lower power consumption, and the corresponding microfabrication technology has also entered the deep submicron level. The reliability of connection technology is becoming more and more urgent. Because metal aluminum has the characteristics of easy film formation and pattern processing, and good adhesion to silicon and silicon dioxide, currently LSI and VLSI integrated circuits mostly use aluminum wiring technology. However, as the size of the microfab...

AI Technical Summary

Problems solved by technology

Although Cu has many advantages, there are still many problems to be solved in the introduction of Cu in the microelectronics industry: (1) After Cu diffuses into the Si substrate, it will become a deep-level impurity, which will affect the performance of the device; (2) Cu and Si, SiO 2 (3) Cu and Si react at about 200°C to form a compound of Cu and Si; (4) Cu does not form a self-protecting oxide layer like Al

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