Method for manufacturing photoelectricity semiconductor element of semiconductor containing P-type three-tribe nitrogen compound

A technology of optoelectronic semiconductors and manufacturing methods, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the damage of epitaxial layer, do not meet the requirements of equipment cost and output efficiency, and increase the steps of heating and cooling And other issues
CN101325230BInactive Publication Date: 2011-04-06ZHANJING TECH SHENZHEN +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHANJING TECH SHENZHEN
Publication Date
2011-04-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

A manufacturing method of a photoelectric semiconductor element containing a P-type group III nitride semiconductor comprises allowing a reacting gas containing a P-type dopant to grow on a substrate to obtain a group III nitride semiconductor; reducing the temperature in a reaction chamber to 700-850 DEG C, introducing nitrogen gas or an inert gas to discharge ammonia and hydrogen out of the reaction chamber, and reducing the pressure in the reaction chamber to 20-80 kPa; keeping for a sufficient time until the residual ammonia and hydrogen are completely discharged, reducing the temperaturein the reaction chamber to room temperature, and taking out the substrate.
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Description

technical field

[0001] The invention relates to a method for manufacturing an optoelectronic semiconductor element containing P-type III-group nitrogen compound semiconductor, in particular to a method for activating P-type dopant in the III-group nitrogen compound semiconductor. Background technique

[0002] As light-emitting diode elements are widely used in different products, in recent years, materials for making blue light-emitting diodes have become an important research and development object in the current optoelectronic semiconductor material industry. At present, the materials of blue light-emitting diodes include zinc selenide (ZnSe), silicon carbide (SiC) and indium gallium nitride (InGaN). above eV.

[0003] Since the gallium nitride series is a light-emitting material with a direct gap, it can produce high-brightness illumination light, and has the advantage of longer life than zinc selenide, which also has a direct gap. In addition, the energy gap of gallium...

Claims

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