43results about How to "Lattice stabilization" patented technology

The invention relates to a method for preparing a pigment by using a waste flue gas denitrification catalyst. The steps are as follows: crush the waste denitrification catalyst with a crusher, add a metal oxide stabilizer and a metal oxide color developer and mix evenly; use a ball mill to mix evenly The final raw materials are ground into powder particles and put into industrial roasting furnaces. After heating up to 800°C at a certain heating rate, a combustion reaction occurs. They are kept at 1000°C in the roasting furnace for 8-16 hours, naturally cooled and ground to obtain pigments. . The pigment of the invention is stable in property, and has good heat resistance, light resistance, weather resistance, acid resistance and alkali resistance. The method of the invention is simple, requires less equipment and has an uncomplicated structure, can realize harmless treatment and resource utilization of waste denitrification catalysts, and is convenient for popularization.

The invention discloses a zirconium silicate-coated low-valence ion co-doping gamma-Ce2S3 red pigment which is composed of low-valence ion co-doping gamma-Ce2S3 red pigment powder and a zirconium silicate transparent shell coating the surface of the low-valence ion co-doping gamma-Ce2S3 red pigment powder, wherein in the low-valence ion co-doping gamma-Ce2S3 red pigment powder, the ion valence ofthe doping ion M is 2, and at least two doping ions exist according to a molar ratio of 2(1-x):3x between Ce<3+> and M(total), where x is greater than 0 and less than or equal to 0.1. The invention also discloses a preparation method of the gamma-Ce2S3 red pigment. According to the zirconium silicate-coated low-valence ion co-doping gamma-Ce2S3 red pigment disclosed by the invention, the gamma-Ce2S3 crystal structure is stabilized internally through a way of low-valence ion co-doping while the gamma-Ce2S3 is coated externally with zirconium silicate which is stable at high temperature, therebyremarkably improving the high-temperature stability of the gamma-Ce2S3 red pigment and significantly expanding the application field of the gamma-Ce2S3 red pigment. The preparation method disclosed by the invention has the advantages that the technology is simple and easy to operate, the influence factors are easy to control, the production cost is low and the promotion and application are facilitated.

The invention discloses a method for preparing a stannic-oxide-wrapped cobalt magnesium lithium material. The method includes the following steps: cobalt salt and magnesium salt are dissolved into water, stabilizers are added to be mixed, a solution A is obtained, the solution A and precipitators are added into a reaction container at the same time for carrying out co-precipitation, purifying processing, heat nature determining processing and sub-high temperature processing are carried out on sediment to obtain cobalt magnesium oxide; the cobalt magnesium oxide is mixed with LiOH.H2O, absolute ethyl alcohol is added, ball milling is carried out in a planetary ball mill, filtering and drying are carried out, the obtained powder material is loaded into a porcelain boat, the porcelain boat with the powder material is pushed into a resistance furnace to be sintered, and a cobalt magnesium lithium material is obtained after cooling is carried out; the obtained cobalt magnesium lithium material is mixed with SnCl2.2H2O and deionized water, the mixture is evenly stirred, ultrasonic processing, filtering and drying are carried out, and the stannic-oxide-wrapped cobalt magnesium lithium material is obtained after roasting is carried out in a muffle furnace. The prepared stannic-oxide-wrapped cobalt magnesium lithium material is stable in electrochemical performance, stable in crystal lattice, large in tap density and good in cycle performance and rate performance.

The invention relates to a titanium-containing calcium hexaaluminate material and a preparation method thereof. The technical scheme is: using 60-80wt% of alumina micropowder, 5-20wt% of calcium-containing micropowder, 10-20wt% of titanium oxide micropowder and 1-10wt% of manganous oxide micropowder as raw materials; Mix evenly in a planetary ball mill to obtain a mixture. Then the mixture is machine-pressed at 100-200MPa to obtain a green body; then the green body is dried at 110-200°C for 12-36 hours, and kept at 1500-1800°C for 1-8 hours. Hours, that is, titanium-containing calcium hexaaluminate material. The particle size D of the alumina micropowder 50 1-8 μm; the particle size of the calcium-containing micropowder D 50 1 to 10 μm; the particle size D of the titanium oxide micropowder 50 1 to 10 μm; the particle size D of the manganese oxide micropowder 50 1 to 8 μm. The invention has low cost and simple process, and the manufactured product has the characteristics of good chemical stability, good thermal shock resistance and strong resistance to titanium-aluminum alloy melt.

Belonging to the field of lithium ion batteries, the invention discloses an aluminum coated ternary zirconium-doped composite material. The aluminum coated ternary zirconium-doped composite material comprises a core and a shell coating the core surface. The material of the core is (Ni0.8-xCo0.15Al0.05Zrx)(OH)2, wherein x is 0.001-0.03, and the material of the shell is Al(OH)3. The invention also discloses a preparation method of the aluminum coated ternary zirconium-doped composite material and a composite cathode material obtained by sintering of the composite material with a lithium source.The preparation method provided by the invention is simple and low in cost, and can achieve macro preparation. The prepared lithium ion battery doped and coated ternary material has good sphericity, specific surface area, and excellent ionic conductivity and electrical conductivity, the material can be used for lithium ion batteries and exhibits excellent cyclic stability and rate performance, thus having industrial application prospect.

A manufacturing method of a photoelectric semiconductor element containing a P-type group III nitride semiconductor comprises allowing a reacting gas containing a P-type dopant to grow on a substrate to obtain a group III nitride semiconductor; reducing the temperature in a reaction chamber to 700-850 DEG C, introducing nitrogen gas or an inert gas to discharge ammonia and hydrogen out of the reaction chamber, and reducing the pressure in the reaction chamber to 20-80 kPa; keeping for a sufficient time until the residual ammonia and hydrogen are completely discharged, reducing the temperaturein the reaction chamber to room temperature, and taking out the substrate.