Manufacturing method for silicon thin-film solar cell

A solar cell and manufacturing method technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problems of high dependence on crystalline silicon, low-temperature deposition of polysilicon films, and small film grain size, and has broad prospects for industrialization. , the effect of high photoelectric conversion efficiency and low cost

Inactive Publication Date: 2009-02-11
HUNAN UNIV
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  • Claims
  • Application Information

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Problems solved by technology

But the disadvantage is: because it still belongs to the bulk silicon process, the thickness of the silicon wafer is generally greater than 200 microns, and it cannot get rid of the high dependence on crystalline silicon.
However, there are still the following problems: 1) polysilicon film is deposited at low tem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Purchase p-type polysilicon with a purity of about 7N as the source material, and its resistivity is 1.0Ω.cm. Polysilicon particles with a particle size of 50 microns are obtained through ball milling and jet crushing techniques. After pickling and drying, an electrostatic spraying technology is used to spray a layer of the above-mentioned silicon micron particle film on the aluminum foil substrate to form a p-type silicon micron particle monolayer film. Then, a 600°C inert atmosphere rapid annealing process is used to alloy the silicon micro-particles and the aluminum substrate interface, and at the same time, they are firmly bonded to each other. A layer of n-type amorphous silicon film with a thickness of 200 nanometers is deposited on the p-type silicon microparticle monolayer film by using plasma enhanced chemical vapor deposition (PECVD), and the substrate temperature is 200°C. Finally, a layer of ITO transparent conductive electrode layer is deposited on the amo...

Embodiment 2

[0020] The p-type polysilicon with a purity of 6N is used as the source material, and the resistivity is about 0.5Ω.cm. Polysilicon particles with a particle size of 10 microns are obtained through ball milling and jet crushing techniques. After mixing with high-purity viscous and volatile liquid organic compounds, a layer of the above-mentioned silicon microparticle film is deposited on the glass substrate deposited with an aluminum conductive layer by printing technology to form a p-type silicon microparticle monolayer film. Then, a 300°C inert atmosphere rapid annealing process is used to alloy the silicon micro-particles and the aluminum substrate interface, and at the same time, they are firmly bonded to each other. A layer of intrinsic microcrystalline silicon with a thickness of 100 nanometers and a layer of n-type microcrystalline silicon with a thickness of 50 nanometers were sequentially deposited on the p-type silicon microparticle film layer by plasma enhanced chem...

Embodiment 3

[0022] The p-type polysilicon with a purity of 7N is used as the source material, and the resistivity is 2.0Ω.cm. Polysilicon particles with a particle size of about 20 microns are obtained through ball milling and jet crushing techniques. After pickling and drying, an embossing technique is used to deposit a layer of the silicon micron particle film above on the ceramic substrate deposited with an aluminum conductive layer to form a p-type silicon micron particle monolayer film. Then, a 500°C inert atmosphere rapid annealing process is adopted, so that the silicon micro-particles and the aluminum electrodes are firmly combined with each other. A layer of n-type amorphous silicon layer with a thickness of 50 nanometers is sequentially deposited on the above-mentioned p-type silicon microparticle film layer by using plasma-enhanced physical vapor deposition technology, and the substrate temperature is 200°C. Finally, a layer of ITO transparent conductive electrode layer is dep...

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Abstract

The invention discloses a method for manufacturing a thin silicon film solar battery. The method comprises the following steps: P-type high-purity polysilicon with the purity of more than 99.999% is firstly crushed into high-purity polysilicon powder with the granularity of 5-50 micron; the polysilicon powder is applied on a substrate combined with an aluminum electrode to form a high-purity p-type silicon micron granular film; silicon micron granules and a metal conductive bottom electrode interface are alloyed through the anneal technology; then an n-type silicon layer is deposited on the silicon granular single-layer film, or an intrinsic silicon layer and the n-type silicon layer are deposited in sequence; and finally a transparent conductive electrode layer is deposited. The method adopts the unique technology of crushing and applying high-purity polysilicon raw material to realize the deposition of the high-quality polysilicon film on substrates such as glass, plastics, metal sheets, etc., and the technological method for manufacturing the solar battery has the advantages of simplicity, low manufacture cost, high efficiency of photoelectric conversion and broad value of industrialization.

Description

technical field [0001] The invention relates to a method for preparing cheap and high-efficiency silicon thin-film solar cells, and belongs to the technical fields of new energy, semiconductor optoelectronics and the like. Background technique [0002] At present, countries all over the world are scrambling to launch various solar energy development plans to decorate the global energy landscape in the new century with colorful and full of spring. According to the forecast of the global authoritative energy agency, by the middle of this century, solar energy will become an important part of human energy composition, and by the end of this century will become the "main force" of human energy composition. Among the existing types of solar cells, the monocrystalline silicon solar cell technology is the most mature, and the photoelectric conversion efficiency of large-scale industrialization is the highest, reaching 16%-18%. However, the disadvantages of this battery are high en...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 万青易宗凤
Owner HUNAN UNIV
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