Sulfur compound phase-change material cerium oxide chemico-mechanical polishing solution

A technology of chalcogenide compounds and phase change materials, applied in the field of microelectronics, can solve the problems of low chemical activity, residual GeSbTe, difficult to produce chemical cross-linking, etc., to meet the needs of CMP process, with controllable rate and low surface damage Effect

Active Publication Date: 2009-02-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although SiO 2 It has a certain hardness (Mohs hardness is 7), but compared with the soft GeSbTe film material, the chemical activity is not high, and it is difficult to produce sufficient chemical crosslinking during the polishing process, so that the polishing process is based on mechanical action. host
The products and pores after mechanical removal will be bonded together again due to the tension of the surface water film, which is easy to cause GeSbTe residues after polishing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The composition of the polishing solution is as follows:

[0050] Cerium oxide particle content: 30wt%;

[0051] Particle size: 10nm;

[0052] Hydrogen peroxide: 5wt%;

[0053] Sodium polyacrylate: 4wt%;

[0054] Proline: 0.3wt%;

[0055] pH value (adjusted with nitric acid): 2;

[0056] The rest is deionized water.

[0057] The polishing test results are shown in Table 1.

Embodiment 2

[0059] The composition of the polishing solution is as follows:

[0060] Cerium oxide particle content: 2wt%;

[0061] Particle size: 150nm;

[0062] Potassium ferricyanide: 1.5wt%;

[0063] Sodium polyoxyethylene sulfate: 0.5wt%;

[0064] Citric acid: 0.2wt%;

[0065] pH value (phosphoric acid adjustment): 5;

[0066] The rest is deionized water.

[0067] The polishing test results are shown in Table 1.

Embodiment 3

[0069] The composition of the polishing solution is as follows:

[0070] Cerium oxide particle content: 4wt%;

[0071] Particle size: 80nm;

[0072] Ammonium persulfate: 3wt%;

[0073] Sodium polyoxyethylene sulfate: 0.5wt%;

[0074] Salicylic acid: 1wt%;

[0075] pH value (phosphoric acid adjustment): 3;

[0076] The rest is deionized water.

[0077] The polishing test results are shown in Table 1.

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Abstract

The invention provides a sulfur serial compound phase-change material ceria chemical mechanical polishing liquid which, bases on the total weight of the polishing liquid, comprises 0.01-5wt percent of oxidant, 0.01-4wt percent of surfactant, 0.01-3wt percent of organic additive, 0.2-30wt percent of ceria polishing particle and pH regulator and water medium. The polishing liquid is mainly applied to the CMP process of the sulfur serial compound phase-change material GexSbyTe(1-x-y). With the provided ceria chemical mechanical polishing liquid, the polishing rate of the phase-change material GexSbyTe(1-x-y) can be controlled at 5-1500nm / min, simultaneously, the surface roughness is lowered below 7.4. As the polishing of the polishing liquid on the phase-change material GexSbyTe(1-x-y) has the advantages of controllable rate, low surface damage and residue-free performance, the requirement of CMP process for preparing a nano-electronic phase-change memory can be satisfied.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a chemical mechanical polishing liquid, in particular to a cerium oxide chemical mechanical polishing liquid which can be effectively applied to chalcogenide compound phase change materials. Background technique [0002] Phase change memory is considered by the International Semiconductor Industry Association to be the most likely to replace the current Flash memory has become the mainstream product of future memory and the first device to become a commercial product. [0003] The basic principle of phase change memory technology is to use chalcogenide as the storage medium, and use electric energy (heat) to convert the material between the crystalline state (low resistance) and the amorphous state (high resistance) to realize the writing and erasing of information. , The readout of information is realized by measuring the change of resistance. Typical phase change materi...

Claims

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Application Information

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IPC IPC(8): C09G1/02
Inventor 王良咏宋志棠刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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