Foam flotation method capable of separating silicon powder and carbon silicon powder

A silicon carbide powder and foam flotation technology, which is applied in flotation, solid separation, grinding/polishing equipment, etc., can solve the problems of few patents, toxicity, and difficulty in liquid phase gravity flotation, and achieve good results. The effect of easy demarcation

Inactive Publication Date: 2009-07-29
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reagents such as tribromomethane required for liquid phase gravity flotation are very expensive and toxic; most of the silicon powder chips produced in the process of polysilicon wire sawing are micron to submicron, and according to general experience, liquid phase gravity flotation will be very difficult
Therefore, this technology is not ideal even as an intermediate step in the extraction of high-purit

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The foam flotation method for separating silicon powder and silicon carbide powder, adding a treatment agent to the mortar produced by the silicon wafer wire sawing process, the ratio by weight is 100-1000 parts of mortar: 100-1000 parts of treatment agent; Stir evenly with the treatment agent, the sedimentation is divided into three layers, and the upper layer of silicon carbide and the lower layer of silicon powder are collected respectively; the middle is the liquid layer;

[0017] The treatment agent comprises a solvent and a surface modifying agent mixed in proportion, and the mixing ratio is 99-70% by weight of the solvent and 1-30% of the surface modifying agent; wherein the solvent is ethanol, methanol, water, diesel oil and kerosene at least one or several, and the surface modifier is at least one or several of alkylphenol polyoxyethylene ether, octylphenol polyoxyethylene ether, oleic acid, and terpineol.

[0018] Scrape the upper layer of silicon carbide floa...

Embodiment 2

[0020] The foam flotation method for separating silicon powder and silicon carbide powder, adding a treatment agent to the mortar produced by the silicon wafer wire saw process, the ratio by weight is 100 parts of mortar: 1000 parts of treatment agent; the mortar and treatment agent are stirred Uniform, natural sedimentation is divided into three layers, the upper layer of silicon carbide and the lower layer of silicon powder are collected respectively; the middle is the liquid layer;

[0021] The treatment agent comprises a solvent and a surface modifying agent mixed in proportion, the mixing ratio is 80% by weight of the solvent, 20% of the surface modifying agent; wherein the solvent is 40% of ethanol and 40% of water, and the surface modifying agent It is 10% of alkylphenol polyoxyethylene ether and 10% of octylphenol polyoxyethylene ether.

[0022] Scrape the upper layer of silicon carbide floating matter from the surface; collect the silicon powder sediment from the lowe...

Embodiment 3

[0024] The foam flotation method for separating silicon powder and silicon carbide powder, adding a treatment agent to the mortar produced by the silicon wafer wire saw process, the ratio by weight is 100 parts of mortar: 1000 parts of treatment agent; the mortar and treatment agent are stirred Uniform, natural sedimentation is divided into three layers, the upper layer of silicon carbide and the lower layer of silicon powder are collected respectively; the middle is the liquid layer;

[0025] The treatment agent comprises a solvent and a surface modifier mixed in proportion, and the mixing ratio is 60% by weight of ethanol, a solvent composed of 20% of water, 15% of alkylphenol polyoxyethylene ether, and 5% of octylphenol Surface modifier composed of polyoxyethylene ether. Scrape the upper layer of silicon carbide floating matter from the surface; collect the silicon powder sediment from the lower layer.

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Abstract

The invention relates to technology for the powder separation of silicon and carborundum in mortar produced in a silicon chip wire sawing process in the field of solar photovoltaic, in particular to a foam flotation method for separating silicon from carborundum. The foam flotation method for separting silicon power and carborundum powder comprises the following steps of: adding a finishing agent into mortar produced in a silicon chip wire sawing process according to a principle of 100 to 1,000 weight portions of mortar and 100 to 1,000 weight portions of finishing agent; and stirring the mortar and the finishing agent uniformly, allowing the mixture to settle in three layers, and collecting the upper layer of carborundum and the lower layer of silicon power respectively, wherein the middle layer is a liquid layer. The finishing agent is prepared by mixing a solvent and surface modifier according to a principle of 99 to 70 percent of solvent and 1 to 30 percent of surface modifier. The content of the residual carborundum of the collected silicon powder is less than 0.5 volume percent and the content of the residual silicon in the mortar is less than 10 volume percent.

Description

technical field [0001] The invention relates to a powder separation technology for silicon and silicon carbide in mortar produced by a silicon wafer wire sawing process in the field of solar photovoltaics, in particular to the separation of silicon and silicon carbide by using a foam flotation method. technical background [0002] Various silicon wafers, including polycrystalline silicon and monocrystalline silicon solar cells, and silicon wafers used in the microelectronics industry, are generally produced by cutting with wire saws and silicon carbide abrasive slurry, hereinafter referred to as mortar. The thickness of the silicon wafer is generally 0.22mm, and there is still a development trend of further thinning at present. The width of the wire saw kerf is generally 0.18-0.30mm, which means that about 20-60% of the high-purity silicon material becomes sawdust and enters the slurry. Its extraction and recovery is equivalent to opening up a new source of high-purity silic...

Claims

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Application Information

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IPC IPC(8): B24B55/12B03D1/02B03B1/04
Inventor 熊裕华魏秀琴周浪尹传强周潘兵杨志宏
Owner NANCHANG UNIV
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