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Film-forming material, silicon-containing insulating film and method for forming the same

A technology containing silicon film and insulating film, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of increased leakage current, increased dielectric constant of film, and high hygroscopicity of insulating film, and achieves low Effects of high permittivity, excellent mechanical strength, and high processing resistance

Inactive Publication Date: 2009-09-09
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, among these silane compounds, there are silane compounds that are chemically stable and require extreme conditions when forming a film by chemical vapor deposition, and are chemically unstable and are supplied into the chamber. Silane compounds that react in piping, and silane compounds that have poor storage stability
In addition, depending on the selected compound, the hygroscopicity of the insulating film after film formation is high, and there is also a disadvantage of increased leakage current.
Furthermore, in the actual manufacturing process of semiconductor devices, the process of processing the interlayer insulating film using RIE (Reactive Ion Etching) is often used. In this RIE, there is a problem that the dielectric constant of the film increases. The problem of damage to the interlayer insulating film caused by the hydrofluoric acid-based chemical solution used in the process requires an interlayer insulating film with high processing resistance

Method used

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  • Film-forming material, silicon-containing insulating film and method for forming the same
  • Film-forming material, silicon-containing insulating film and method for forming the same
  • Film-forming material, silicon-containing insulating film and method for forming the same

Examples

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Effect test

Synthetic example 2

[0101] The 3-necked flask equipped with a condenser and a dropping funnel was dried under reduced pressure at 50° C., and then filled with nitrogen. Then, 20 g of magnesium and 500 ml of THF were added to the flask, and 25 g of (chloromethyl)trimethylsilane was added while stirring at room temperature. After stirring for a while and confirming heat generation, 55 g of (chloromethyl)trimethylsilane was added from the dropping funnel over 30 minutes. After completion of the dropwise addition, after confirming that the liquid temperature had returned to room temperature, a mixed solution of 250 ml of THF and 258 g of vinyltrimethoxysilane was added to the flask, followed by heating to reflux at 70° C. for 6 hours to complete the reaction. After the reaction solution was cooled to room temperature, the magnesium salt and unreacted magnesium generated were filtered off, and the filtrate was fractionally distilled to obtain [(trimethylsilyl) methyl] vinyldimethoxysilane 80g (yield 6...

Synthetic example 3

[0103] The 3-necked flask equipped with a condenser and a dropping funnel was dried under reduced pressure at 50° C., and then filled with nitrogen. Then, 500 ml of toluene was added to the flask, and 129 g of ethyldichlorosilane and 142 g of vinyltriethylsilane were added while stirring at room temperature. After stirring for a while, 100 mg of chloroplatinic acid was added thereto, and the mixture was reacted at 100° C. for 5 hours. After cooling this to room temperature, 160 g of pyridine was added, and 100 g of ethanol was added dropwise while stirring. After dripping and reacting at room temperature for 3 hours, the generated salt was filtered off, and the filtrate was fractionally distilled to obtain 180 g of [(triethylsilyl)ethyl]ethyldiethoxysilane (yield 62%). The purity obtained by GC method was 99.2%. In addition, the residual water content is 30ppm, the content of elements other than silicon, carbon, oxygen and hydrogen (metal impurity content) is Na=1.1ppb, K=1....

Embodiment 1

[0106] Using the PD-220N plasma CVD apparatus manufactured by SAMCO Corporation, the gas flow rate of [(trimethylsilyl)methyl]methyldimethoxysilane was 25 (sccm), the gas flow rate of Ar was 3 (sccm), RF Under the conditions of electric power of 250W, substrate temperature of 380°C, and reaction pressure of 10Torr, a silicon-containing film (1-1) of 500nm was formed on the silicon substrate by plasma CVD.

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Abstract

The present invention discloses a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R-R may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2).

Description

technical field [0001] The present invention relates to a material for film formation, a silicon-containing insulating film, and a method for forming the same. Background technique [0002] In recent years, large-scale semiconductor integrated circuits (ULSI) have been strongly desired for further high-speed processing in order to cope with increased information processing volume and functional complexity. The speedup of ULSI is achieved by miniaturization, high integration, and multilayering of the components in the chip. However, with the miniaturization of components, wiring resistance and inter-wiring parasitic capacitance increase, and wiring delay becomes a factor that dominates the signal delay of the entire device. In order to avoid this problem, the introduction of low-resistivity wiring material and low dielectric constant (Low-k) interlayer insulating film material has become an essential technology. [0003] As a wiring material, the use of Cu, a metal with low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D183/00C23C16/06H01L21/312
Inventor 秋山将宏中川恭志小久保辉一
Owner JSR CORPORATIOON
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