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Preparation method of zinc oxide varister
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A technology of zinc oxide and varistors, applied in the direction of resistors, resistance manufacturing, piezoresistor cores, etc., can solve problems such as inability to create more ideal or more economical process conditions, limitations, restrictions, etc.
Active Publication Date: 2011-10-12
SFI ELECTRONICS TECH
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[0005] However, in the same sintering process, the zinc oxide varistor preparation method that achieves the doping of zinc oxide grains and the formation of a high-resistance grain boundary layer between the grains has disadvantages in addition to the need for high-temperature sintering to complete the varistor with a crystalline phase. In addition to sintering the high-impedance grain boundary layer, it also brings various limitations to the performance control of zinc oxide varistors.
For example, in the sintering process, the conditions for doping ions in zinc oxide grains are limited, and the type and quantity of doping ions cannot be selected in a wider range. Therefore, the performance of zinc oxide varistors, including breakdown voltage, nonlinear coefficient , C value, leakage current, surge absorption capacity and ESD absorption capacity, etc., cannot be adjusted in a wider range
In the same way, during the sintering process, the conditions for forming a high-impedance grain boundary layer with a crystalline phase between zinc oxide grains are also limited, and in addition to creating more ideal or economical process conditions, it cannot be in a wider range. The composition and dosage of the high-impedance grain boundary layer are selected, so the performance of the zinc oxide varistor cannot be adjusted in a wider range.
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[0030] The zinc oxide varistor preparation method of the present invention comprises the following steps:
[0031] a. Prefabricated zinc oxide grains containing doped ion components;
[0032] According to the principle of crystallography, the solution containing zinc ions and the solution containing doped ion components are prepared, and then the precipitate is obtained by nanotechnology such as coprecipitation method or sol-gel process, and then heated Decomposed to produce zinc oxide grains containing dopant ionic components.
[0033] Zinc oxide grains can be doped with one or more ionic components, wherein the doping amount of ionic components is less than 15 mol% of the zinc oxide content, but less than 10 mol% is a preferred embodiment, and less than 2 mol% is the best Example.
[0034] The doping ion composition of zinc oxide grains is selected from silver (Ag), lithium (Li), copper (Cu), aluminum (Al), cerium (Ce), cobalt (Co), chromium (Cr), indium (In) , gallium (G...
Embodiment 1
[0059] The zinc oxide grain samples listed in Table 1 doped with 1 mol% of single ion components were respectively prepared by chemical co-precipitation method. The sintered material code-named G1-00 is prepared by chemical co-precipitation method, and its composition and weight ratio are as follows:
[0060]
[0061]
[0062] According to the weight ratio of zinc oxide grain sample: G1-00 sintered material is 100: 10 or 100: 15 or 100: 30, and then mixed at 1000kg / cm 2 The pressure is pressed into a disc, and then sintered at a sintering temperature of 1065 ° C for 2 hours, and then the silver electrode is completed at 800 ° C, and a disc type zinc oxide surge absorber is made. The pressure-sensitive properties of various zinc oxide varistors were measured respectively, and the results are shown in Table 1.
[0063] It can be seen from Table 1 that when the same sintered material is used, the pressure-sensitive characteristics of zinc oxide varistors will vary with the...
Embodiment 2
[0070] The zinc oxide grain samples listed in Table 2 doped with different mol% single ion components were prepared by chemical co-precipitation method. The G1-00 sintered material prepared in Example 1 was used.
[0071] According to the ratio of zinc oxide grain sample: G1-00 sintered material weight ratio is 100: 10, and according to the same conditions of embodiment 1 to prepare disc type zinc oxide varistor, then measure the pressure of various zinc oxide varistors respectively Sensitive performance, the results are shown in Table 2.
[0072] It can be seen from Table 2 that when the zinc oxide grains contain a single doping ion component and the same sintered material is used, the pressure-sensitive characteristics of the zinc oxide varistor will vary with the amount of doping ion components used in the zinc oxide grains. .
[0073] Therefore, by controlling the type and amount of doping ions in the zinc oxide crystal grains, the pressure-sensitive characteristics of t...
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Abstract
The invention relates to a preparation method of a zincoxide varister, comprising two independent steps: preparing zincoxide granules with dopingion components; and preparing a sintering material for coating the zincoxide granules. According to the performance requirement of the varister, the doping components of the zinc oxide granules, the components of the high-impedance sintering materialand preparation conditions are prepared in advance; finally, the zinc oxide granules and the high-impedance sintering material are evenly mixed according to a certain proportion, and the zinc oxide varister is prepared according to the conventional technology. The zinc oxide varister prepared by the preparation method not only has voltage-sensitive performance, but also has one or more functions of heat sensitivity, capacitance, inductance, piezoelectricity or magnetic characteristic, and the like, can sinter at low temperature (lower than 900 DEG C) and can use fine silver as an inner electrode.
Description
technical field [0001] The invention relates to a preparation method of a zinc oxide varistor, in particular to a preparation method of a zinc oxide varistor prepared by dividing the zinc oxide doping and the high-impedance sintered material covering the zinc oxide crystal grains into two independent processes. Background technique [0002] Zinc oxide varistor (ZnO varistor) is based on zinc oxide, and added bismuth (Bi), antimony (Sb), silicon (Si), cobalt (Co), manganese (Mn) and chromium (Cr) and other oxides, and then It is formed by high temperature sintering above 1000°C. Among them, in the process of high-temperature sintering, the zinc oxide grains will improve the semiconductivity due to the doping of bismuth (Bi), antimony (Sb), silicon (Si), cobalt (Co), manganese (Mn) and chromium (Cr) plasma. properties, and a high-resistance grain boundary layer with a crystalline phase is formed between zinc oxide grains. [0003] Therefore, in the known preparation method o...
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