Silicon wafer, method for manufacturing the same and method for heat-treating the same

A manufacturing method and technology of silicon wafers, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve problems such as easy slippage and increased thermal stress, so as to contribute to yield and improve thermal strength , The effect of preventing the precipitation of BMD
CN101638807BActive Publication Date: 2012-12-12GLOBALWAFERS JAPAN
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
GLOBALWAFERS JAPAN
Publication Date
2012-12-12

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Abstract

A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating / cooling thermal process at a maximum temperature (T1) of 1300 DEG C or more, but less than 1380 DEG C in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer (10) according to the invention has, in a defect-free region (DZ layer) (12) including at least a device active region of the silicon wafer, a high oxygen concentration region (12) having a concentration of oxygen solid solution of 0.71018 atoms / cm3 or more and at the same time, the defect-free region contains interstitial silicon (14) in supersaturated state.
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Description

technical field

[0001] The invention relates to a silicon wafer used as a substrate of a semiconductor device and a method for manufacturing the silicon wafer. In addition, the present invention relates to a heat treatment method for applying a silicon wafer obtained by cutting a monocrystalline silicon block produced by the Czochralski method (hereinafter referred to as "CZ" method) to a semiconductor device. Background technique

[0002] With the high integration of semiconductor devices in recent years, the quality requirements for silicon substrates used as their substrates have also become more stringent. In particular, it is strongly required to reduce native defects and have high gettering effect in the device active region of the silicon wafer.

[0003] In native defects, for example, aggregates of supersaturated hole-type point defects called COP (crystallization-induced particles) and LSTD (laser scattering tomography defects) grow and become OSF (oxidation-induce...

Claims

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