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Electric tristable material, and preparation and application thereof

A tri-stable, selected technology, applied in the preparation of organic compounds, static memory, and other chemical processes, to achieve great value, stable device performance, and simple synthesis

Active Publication Date: 2013-03-27
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, regardless of magnetic storage and optical storage, or the above-mentioned electrical storage based on organic bistable materials, so far only two-bit data storage based on "0" and "1"

Method used

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  • Electric tristable material, and preparation and application thereof
  • Electric tristable material, and preparation and application thereof
  • Electric tristable material, and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A kind of synthesis of bis-azodiphenyl sulfone compound with symmetrical structure, its general formula is:

[0033]

[0034] When R1 is a methyl group, its synthesis steps are as follows:

[0035] (1). Weigh 5 mmol of 4,4'-dimethylaminodiphenyl sulfone and add it to the mixed solution of 10-30 mL of N, N-dimethylformamide and 3-10 mL of concentrated hydrochloric acid and cool the reaction system When the temperature is below 10°C, prepare 0.4-0.8g / mL sodium nitrite ice water solution and slowly add it dropwise to the aforementioned reaction system. After the reaction solution becomes clear, continue to stir for 20-120 minutes, filter, and freeze the filtrate for storage;

[0036] (2). Weigh 8-12mmol of N,N-dimethylaniline and dissolve it in 5-15mL of N,N-dimethylformamide, and slowly add the solution dropwise to step (1) at 10°C In the diazonium salt solution, stir and react for 20-120 minutes, adjust the pH value of the system to 5-7, continue to stir and react fo...

Embodiment 2

[0060] A kind of synthesis of bis-azodiphenyl sulfone compound with symmetrical structure, its general formula is:

[0061]

[0062] When R is a methoxyl group, its synthesis steps are as follows:

[0063] (1). Weigh 5 mmol of 4,4'-dimethylaminodiphenyl sulfone and add it to the mixed solution of 10-30 mL of N, N-dimethylformamide and 3-10 mL of concentrated hydrochloric acid and cool the reaction system When the temperature is below 10°C, configure 0.4-0.8g / mL sodium nitrite ice water solution and slowly add it dropwise to the aforementioned reaction system. After the reaction solution becomes clear, continue to stir for 20-120 minutes, filter, and freeze the filtrate for storage;

[0064] (2). Weigh 8-12mmol of methoxybenzene and dissolve it in 5-15mL of N,N-dimethylformamide, and slowly add the resulting solution dropwise to the diazonium salt solution in step (1) at 10°C , stir and react for 20-120 minutes, adjust the pH value of the system to 5-7, continue to stir and...

Embodiment 3

[0085] Taking the compound (A1) obtained in Example 1 as an electrical storage active material as an example, an electrical storage device with a sandwich structure was prepared. The production procedure was as follows: the ITO conductive glass (6) was cleaned with water, acetone, and isopropanol in ultrasonic waves for 5 After ~30 minutes, place it in a vacuum coating machine as an organic material deposition substrate; take 20-30 mg of compound (A1) in a quartz crucible and place it in the molybdenum boat of the vacuum coating machine, and evacuate until the internal pressure of the coating machine is less than 3× 10 -3 Pa begins to vapor-deposit organic molecules, and the organic film thickness is controlled between 60-100nm by a film thickness detector; A certain amount of aluminum wire is hung on the tungsten wire, and the vacuum is evacuated again until the vacuum degree in the coating machine is less than 8×10 -4 Pa, start to heat the tungsten wire to vapor-deposit alu...

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Abstract

The invention relates to an electric storage material, in particular to an electric tristable material, and preparation and application thereof. The chemical structural formula of the electric tristable material is displayed in the specification, wherein R is selected from one of halogen group, nitro group or methoxyl group; and R1 is selected from one of C1-C6 alkyl group or phenyl group. Due tothe application of the electric tristable material, a 3-digit data storage device is successfully manufactured. Meanwhile, the organic material of the invention has the advantages of simple synthesis,mature manufacturing process of devices and stable device performance; and the data storage capacity in unit density can grow exponentially as compared with the storage devices based on 0 and 1. Therefore, the electric tristable material has great value in the application of super-high density data storage in the next generation.

Description

technical field [0001] The invention relates to an electrical storage material, in particular to an electrical tristable material and a preparation method thereof. Background technique [0002] Information storage technology has gone through two stages of magnetic storage and optical storage successively. The mechanism of their ability to store information is to use the paramagnetism of magnetic materials and the response of photoactive materials to laser light to complete the two-bit data of "0" and "1". For storage, the size of the information storage unit corresponds to the size of the smallest magnetic particle and the interference wavelength of the optical signal. Since the smaller the magnetic particles, the greater the impact of the external magnetic field environment and the fixed range of light wavelengths, the information storage density of the material is limited to a certain extent. At present, the limit of the storage density that can be achieved is about 1000Gb...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/00C07C317/34C07C315/04G11C11/56
Inventor 路建美李华王丽华李娜君
Owner SUZHOU UNIV
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