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Grower of high-purity semi-insulating silicon carbide single crystal

A silicon carbide body and growth device technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of limited sealing of growth equipment and difficulty in reducing the amount of N element

Active Publication Date: 2012-05-30
安徽微芯长江半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sealing of conventional growth equipment is limited, and the leak rate is generally 10 -5 Pa·L / s, the crystal growth is carried out for more than 50 hours in a growth environment close to vacuum. The amount of nitrogen gas entering the cavity from the atmosphere is large, and the amount of N element doped into the crystal is difficult to reduce, which becomes a constraint for growth. The main factors for crystals to increase resistivity and realize high-purity semi-insulation

Method used

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  • Grower of high-purity semi-insulating silicon carbide single crystal
  • Grower of high-purity semi-insulating silicon carbide single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The crystal growth furnace used in this example is as figure 1 As shown, the high-purity semi-insulating silicon carbide single crystal growth device includes: a furnace body 2 and a furnace cover 1, a graphite crucible 10 and an induction coil 13, wherein the furnace body 2 is provided with a graphite crucible 10 and an induction coil 13, and the induction coil 13 surrounds the outer wall of the graphite crucible 10; the side wall of the furnace body 2 is provided with an air inlet / exhaust port 5 of the isolation cavity, and the bottom of the furnace body 2 is also provided with an air extraction port 8 communicating with a vacuum pump; and the furnace body 2 side The interior of the wall is sequentially provided with a separate isolation cavity 14 and a cooling water cavity 15 from the inside to the outside. An outer flange 6 and an inner flange 7 are provided at corresponding positions of the isolation chamber 14 and the cooling water chamber 15 inside the side wall ...

Embodiment 2

[0029] use as figure 1 The growth device of the high-purity semi-insulating silicon carbide single crystal is shown, wherein the isolation cavity inlet / exhaust port 5 is connected to a vacuum pump to evacuate, and SiC powder 11 with a particle size of 100 microns is placed in the crucible 10, and 4H-SiC (000 -1) The surface C is used as the seed crystal, using the traditional PVT process, controlling the power on the induction coil 13 to be 6.8Kw, and the pressure in the growth furnace is 10Torr. After 50 hours of growth, more than 4H with a length greater than 2cm and a diameter greater than 2 inches will be obtained. Type high-purity semi-insulating silicon carbide ingot. Crystal resistivity greater than 10 5 Ω·cm, microtubule density less than 100cm -2 .

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Abstract

The invention relates to a grower of a high-purity semi-insulating silicon carbide single crystal, belonging to the field of crystal growth. The grower comprises a vacuum chamber, a graphite crucible and an induction coil. The grower of the invention is used for growing the high-purity semi-insulating silicon carbide single crystal based on the technology of physical vapor transport (PVT) withoutspecific growing processes. The invention is mainly characterized in that the side wall of a growing furnace is in a multi-layer (at least three-layer) structure, and more than two independent spacesare formed in the side wall and are respectively used for introducing cooling water and high-purity inert gas (generally, high-purity argon gas) or introducing cooling water and vacuumizing. The grower of the invention can be used for effectively isolating the graphite crucible from air, preventing nitrogen gas in the air from entering the graphite crucible in the growing process and effectively controlling nitrogen elements to permeate into the growing silicon carbide crystal, thereby obtaining the high-purity semi-insulating silicon carbide single crystal.

Description

technical field [0001] The invention belongs to the field of crystal growth, in particular to a high-purity semi-insulating silicon carbide single crystal growth device. Background technique [0002] Silicon carbide (SiC) has high thermal conductivity (about 5.0W / cm), high saturated electron mobility (about 2.7x10 7 cm / s), high breakdown electric field (about 3MV / cm), very suitable for making high-voltage, high-frequency electronic devices that need to be operated at high power or high temperature. At the same time, SiC has very strong chemical stability and radiation resistance. Therefore, SiC has become a recognized new-generation semiconductor material that can replace the first-generation semiconductor Si and the second-generation semiconductor GaAs. [0003] Semi-insulating silicon carbide crystals have important applications in metal-oxide-semiconductor field effect transistors, semiconductor photoconductive switches and other devices. By doping a certain amount of v...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36
Inventor 陈博源陈之战施尔畏严成锋肖兵
Owner 安徽微芯长江半导体材料有限公司