Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate

A technology of single crystal thin film and monoclinic crystal type, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problem of large substrate lattice mismatch, unsuitable for industrial production, and unsatisfactory crystallization quality, etc. low epitaxial growth temperature, precise control of process conditions, and good adhesion

Inactive Publication Date: 2011-02-09
SHANDONG UNIV
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Problems solved by technology

However, gallium oxide films prepared by these conventional methods are generally amorphous or polycrystalline, and there are a large number of defects inside the film, and the crystal quality is poor, which limits its application in the fields of optoelectronic materials and devices.
[0005] (2) Crystalline β-Ga 2 o 3 The preparation of thin films often requires very high temperature (≥900°C), and due to the large lattice mismatch of most substrates, even if

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  • Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate
  • Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate
  • Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate

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[0054] Example 1: Preparation of Monoclinic Gallium Oxide Single Crystal Thin Film Material by MOCVD Technology

[0055] With the polished MgO(100) surface as the substrate material, trimethylgallium [Ga(CH 3 ) 3 ] As an organometallic source, a gallium oxide single crystal thin film was prepared at 650°C, and the steps were as follows:

[0056] (1) First pump the reaction chamber of the MOCVD equipment to a high vacuum state of 5×10 -4 Pa, heat the substrate to 650°C;

[0057] (2) Open the valve of the nitrogen cylinder and feed nitrogen into the reaction chamber (background N 2 500sccm) for 30 minutes, the reaction chamber pressure was stabilized at 120Torr;

[0058] (3) Open the valve of the oxygen cylinder, adjust the flow rate of oxygen to 50 sccm, and keep it for 10 minutes;

[0059] (4) Open the valve of the gallium source bottle, adjust the flow rate of the carrier gas (nitrogen) to 2 sccm, and keep it for 10 minutes;

[0060] (5) Pass oxygen and organometallic g...

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Abstract

The invention relates to a method for preparing a monoclinic gallium oxide single-crystal film on a magnesium oxide substrate. The monoclinic gallium oxide single-crystal film is epitaxially grown on the magnesium oxide substrate with a cubic structure under a vacuum condition by organic metal chemical vapor deposition equipment through an organic metal chemical vapor deposition process, wherein trimethylgallium serves as an organic metal source; nitrogen serves as a carrier gas; and oxygen serves as an oxidizing gas. The film is an epitaxial material with a single-crystal structure; the forbidden bandwidth of the film material is 4.86eV; and the film is applicable to the manufacturing of ultraviolet transparent and short-wavelength photoelectronic devices.

Description

technical field [0001] The invention relates to a monoclinic gallium oxide (β-Ga 2 o 3 ) thin film preparation method belongs to the technical field of semiconductor optoelectronic materials. Background technique [0002] Gallium oxide (β-Ga 2 o 3 ) is a wide-bandgap semiconductor material with a bandgap width of about 4.9eV at room temperature. It has the advantages of high transmittance in the visible light region, UV transparency, potential conductivity, and stable physical and chemical properties. At present, gallium oxide thin film materials are mainly used in insulating layers of Ga-based semiconductor materials, gas sensors and ultraviolet filter materials, and can be widely used in industrial production such as optical anti-reflection and passivation coatings. High-quality gallium oxide single crystal thin films are important materials for the preparation of ultraviolet transparent and short-wavelength optoelectronic devices. [0003] The current preparation of ...

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Application Information

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IPC IPC(8): C30B25/18C30B29/38H01L21/205
Inventor 马瑾孔令沂栾彩娜
Owner SHANDONG UNIV
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