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Method for preparing phosphor-doped zinc oxide nanowires

A technology of zinc oxide nanowires and phosphorus doping, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the properties of zinc oxide nanowires, and achieve low cost, simple and easy process, phosphorus-containing high volume effect

Inactive Publication Date: 2012-05-30
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the latest research results show that carbon can form an n-type doping effect in ZnO, thereby compensating the acceptor and affecting the properties of ZnO nanowires

Method used

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  • Method for preparing phosphor-doped zinc oxide nanowires
  • Method for preparing phosphor-doped zinc oxide nanowires
  • Method for preparing phosphor-doped zinc oxide nanowires

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Example 1. Decompose zinc phosphate at 1050°C for 5mins to prepare phosphorus-doped zinc oxide nanowires on a silicon substrate plated with a 2nm gold catalyst film:

[0027] 1) Ultrasonic clean the silicon wafer in acetone and alcohol for 5mins, and then rinse it with deionized water. A 2nm gold catalyst film is plated on the cleaned silicon substrate by electron beam evaporation coating;

[0028] 2) Put the pure zinc phosphate powder in the aluminum oxide boat, and put the silicon chip coated with gold film directly above the zinc phosphate powder as the substrate for collecting nanowires;

[0029] 3) Push the boat with the source and the substrate into the quartz sleeve, put the quartz tube into the center of a rapid heating furnace, feed a large amount of argon to discharge the air in the tube, and then set the argon flow rate to 200sccm as carrier gas;

[0030] 4) Heat up the tube furnace to 1050°C, set the heating time to 20mins, and when the furnace temperature...

Embodiment 2

[0032] Example 2, Decompose zinc phosphate at 1050°C for 30mins to prepare phosphorus-doped zinc oxide nanowires on a silicon substrate plated with a 2nm gold catalyst film:

[0033] 1) Ultrasonic clean the silicon wafer in acetone and alcohol for 10mins, and then rinse it with deionized water. A 2nm gold catalyst film is plated on the cleaned silicon substrate by electron beam evaporation coating;

[0034] 2) Put the pure zinc phosphate powder in the ceramic boat, and place the silicon chip coated with gold film directly above the zinc phosphate powder as the substrate for collecting nanowires;

[0035] 3) Push the boat with the source and the substrate into the quartz sleeve, put the quartz tube into the center of a rapid heating furnace, feed a large amount of argon to discharge the air in the tube, and then set the argon flow rate to 200sccm as carrier gas;

[0036] 4) Heat up the tube furnace to 1050°C, set the heating time to 20mins, and when the furnace temperature re...

Embodiment 3

[0039] Example 3. Decompose zinc phosphate at 1050°C for 5mins to prepare phosphorus-doped zinc oxide nanowires on a sapphire substrate plated with a 2nm gold catalyst film:

[0040] 1) Ultrasonic cleaning of sapphire in acetone and alcohol for 5mins, and then rinse with deionized water. A 2nm gold catalyst film was plated on the cleaned sapphire substrate by electron beam evaporation coating;

[0041] 2) Put the pure zinc phosphate powder in the aluminum oxide boat, and the sapphire coated with gold film is placed directly above the zinc phosphate powder as the substrate for collecting nanowires;

[0042] 3) Push the boat with the source and the substrate into the quartz sleeve, put the quartz tube into the center of a rapid heating furnace, feed a large amount of argon to discharge the air in the tube, and then set the argon flow rate to 200sccm as carrier gas;

[0043] 4) Heat up the tube furnace to 1050°C, set the heating time to 20mins, and when the furnace temperature re...

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Abstract

The invention discloses a method for preparing phosphor-doped zinc oxide nanowires, and the method comprises the following steps: 1) placing zinc phosphate powder into a porcelain boat, and placing a substrate plated with a gold film right above or at the two sides of the zinc phosphate powder to serve as a substrate for collecting the nanowires; 2) pushing the porcelain boat into a quartz socket tube, placing the quartz socket tube in the center of a tube furnace, discharging air in the quartz socket tube, and setting argon flow to be 100-200sccm to serve as a carrier gas; 3) heating the tube furnance to 950-1100 DEG C, wherein the heating time is set to be 20-30 minutes; when the furnace temperature reaches the set temperature, feeding 2-3sccm of oxygen to the tube furnace; and 4) performing heat preservation for 1-30 minutes at the set temperature, cooling the tube furnace to room temperature, closing the tube furnace and air flow, and taking out the substrate to obtain the phosphor-doped zinc oxide nanowires on the substrate. The method provided by the invention has the advantages that the process is simple and easy, the cost is low, the phosphorus content of the prepared phosphor-doped zinc oxide nanowires is high, and the crystal quality is good.

Description

technical field [0001] The invention relates to a method for preparing phosphorus-doped zinc oxide nanowires. Background technique [0002] In recent years, zinc oxide has attracted widespread attention due to its great development potential in the field of optoelectronics. This is because zinc oxide, as a new type of II-VI compound semiconductor, has many advantages, and its room temperature bandgap reaches 3.37eV. The sub-binding energy is as high as 60meV, and it is one of the most potential semiconductor materials for realizing ultraviolet optoelectronic devices. However, the commercialization of ZnO-based optoelectronic devices has not been realized so far. The main reason is that the p-type doping of ZnO is difficult to achieve. Intrinsic zinc oxide is n-type. To make zinc oxide-based photoelectric devices, it is necessary to prepare both n-type and p-type zinc oxide materials. It is relatively easy to achieve a high concentration of n-type doping, but it is very dif...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
Inventor 高靖云孙杨慧赵清俞大鹏
Owner PEKING UNIV
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