Method for preparing copper indium gallium selenide (CIGS) solar battery buffer layer

Abstract

The invention discloses a method for preparing copper indium gallium selenide (CIGS) solar battery buffer layer. The method comprises the following steps of: preparing a plating solution, selecting a substrate, spraying the plating solution on the substrate and forming an II-VI group compound thin film on the substrate serving as a solar battery buffer layer. In the invention, a spraying method is adopted to prepare the CIGS solar battery buffer layer, a nozzle is adopted to spray plating solution in a stereo shape, such as water curtain shape, circular cone shape or column shape, on the substrate on the conveyor belt based on the dynamic crystallization principle so as to enable the plating solution to contact the substrate to crystallize; since the substrate surface contacts the fresh plating solution continuously, a dynamic balance is formed between the solution and the substrate and a deposition mode similar to the chemical water bath method is formed, new crystals are generated on the contact surface continuously; compared with the conventional chemical water bath method, the method greatly improves the production efficiency. By the adoption of a pressurized metering pump, the spraying amount of plating solution is controlled, so that the II-VI group compound thin film obtained by spraying has a guaranteed thickness, a guaranteed uniformity, a guaranteed density, low cost and good repeatability.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a preparation method of a buffer layer of a copper indium gallium selenide solar cell. Background technique [0002] With the gradual reduction of global non-renewable energy, solar energy as a clean and renewable energy has been highly valued by countries around the world. Compound thin-film solar cells such as copper indium gallium selenide (CIGS), which are the third generation solar cells, have become the main direction of research and development in academia and industry. [0003] Group II-VI compound films such as cadmium sulfide CdS, zinc sulfide ZnS or cadmium telluride CdTe are widely used as buffer layers for thin film solar cells. At present, the preparation methods of II-VI compound thin films can be divided into two categories: meteorological methods and solution chemical methods. Meteorological methods mainly include: vacuum evaporation, molecular beam epitaxy...

AI Technical Summary

Problems solved by technology

Due to the expensive material synthesis equipment and complicated process of the gas phase method, the cost of the obtained photovoltaic cells is very high, so it cannot be popularized and applied in a large area

Solution chemical methods mainly include chemical bath deposition and electrochemical deposition, among which chemical bath deposition is currently the most commonly used method for preparing buffer layers of thin-film solar cells. Crystal structure, etc., but this method has low productivity and poor repeatability, and is not suitable for continuous large-scale preparation of buffer layers for copper indium gallium selenide solar cells; electrochemical deposition cannot meet the requirements of stable crystal shape, natural growth and slow chemical reaction of plating solution in the preparation of buffer layers

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