Nanoimprint based preparation method of LED with high light-emitting efficiency

A nano-imprinting and photoresist technology, which is applied in optical mechanical equipment, photo-engraving process of pattern surface, optics, etc., can solve the problems of inefficient cost, repeated use, and easy damage of the initial template, so as to improve the light output. Efficiency, low cost, cost reduction effect

Inactive Publication Date: 2011-08-17
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the deficiencies in the prior art, the present invention proposes a method for preparing a low-cost and high-efficiency GaN-based photonic crystal LED suitable for large-scale industrial production, using anodized aluminum as a template, and usin

Method used

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  • Nanoimprint based preparation method of LED with high light-emitting efficiency
  • Nanoimprint based preparation method of LED with high light-emitting efficiency
  • Nanoimprint based preparation method of LED with high light-emitting efficiency

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Embodiment 1

[0044] 1. Preparation of nano-imprint templates: Nano-imprint templates include hard templates and soft templates, which are described separately below.

[0045] Preparation of hard template: (1) First, prepare the size, namely pore size, pore spacing, pore size, on pure aluminum (above 99.99%) by two-step electrochemical anodization in a 0.1-0.5mol / L oxalic acid, sulfuric acid or phosphoric acid solution. The depth-adjustable regular anodic aluminum oxide AAO template, the anode voltage is 20~200V, the temperature is 0~15℃, the first oxidation time is 2~5 hours, and the second oxidation time is 1~10 minutes. After step oxidation, the mass concentration of 5% H 3 PO 4 Perform hole expansion treatment in the process, and finally separate the aluminum substrate from the oxide layer to obtain the required through-hole alumina AAO hard template, such as figure 1 As shown in (c); (2) First, a layer of aluminum film is vapor-deposited on the surface of the flat substrate, the thickness ...

Embodiment 2

[0055] 1. Preparation of the nanoimprint template. The nanoimprint template includes a hard template and a soft template. The preparation process is the same as in Example 1.

[0056] 2. Preparation of the target piece:

[0057] Clean the sapphire substrate first, and use metal organic chemical vapor deposition (MOVCD), molecular beam epitaxy (MBE) and other semiconductor epitaxial growth methods to sequentially grow different epitaxial layers on the sapphire substrate to obtain the epitaxial wafer. The target sheet, which includes at least a sapphire substrate, an N-type layer, an active layer and a P-type layer from bottom to top. Such as image 3 Shown

[0058] 3. Uniform glue: spin-coating a layer of UV curable photoresist STU2-120 on the surface of the target film, first rotate it at 500rpm for 10s, so that the hot press glue is evenly spread on the surface of the target film, and then at 3000~4500rpm Rotate for 30s at a speed of, to get rid of excess UV embossing glue, thinni...

Embodiment 3

[0064] 1. Preparation of the nanoimprint template. The nanoimprint template includes a hard template and a soft template. The preparation process is the same as in Example 1.

[0065] 2. Preparation of the target piece:

[0066] Clean the sapphire substrate first, use metal organic chemical vapor deposition (MOVCD), molecular beam epitaxy (MBE) and other semiconductor epitaxial growth methods to sequentially grow different epitaxial layers on the sapphire substrate to make an epitaxial wafer, and finally the epitaxial wafer A layer of SiO is deposited on the surface 2 Or Cr, SiO deposited 2 The thickness of the mask is 20~45nm, and the thickness of the Cr mask is about 10nm, so as to obtain the required target piece, which includes at least sapphire substrate, N-type layer, active layer, P-type layer and SiO from bottom to top. 2 Or Cr mask. Such as Figure 7 Shown

[0067] 3. Uniform glue: spin-coating a layer of mr-I7020E hot pressing glue on the surface of the target sheet, first...

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Abstract

The invention discloses a nanoimprint based preparation method of a GaN (Gallium Nitride)-based LED, comprising the following steps of: (1) preparing a nanoimprint template by utilizing an aluminum anodic oxidation method; (2) carrying out antisticking treatment on the nanoimprint template; (3) rotationally coating a layer of photoresist on a target chip; (4) carrying out nanoimprint on the nanoimprint template and the target chip; (5) separating the nanoimprint template subjected to nanoimprint treatment from the target chip so as to form needed patterns on the photoresist positioned on the surface layer of the target chip; (6) transferring the patterns to the target chip by utilizing ICP (Inductively Coupled Plasma) etching or RIE (Reactive Ion Etching) etching; and (7) carrying out subsequent process treatment on the target chip to prepare the GaN-based LED. The preparation method is simple, convenient and easy to operate and can be used for preparing the nanoimprint template through the anodic oxidation method and manufacturing the GaN-based photonic crystal LED with high light-emitting efficiency through a nanoimprint technology suitable for large-scale industrial production.

Description

Technical field [0001] The present invention relates to a GaN-based light emitting diode (LED), and more specifically, to a method for preparing a GaN-based LED with high light extraction efficiency based on nano-imprint and porous alumina technology. Background technique [0002] GaN-based semiconductor light-emitting diodes (LEDs) have been widely used in lighting, display screens, and communication equipment since their invention. With the promotion of LED applications and the ever-increasing requirements for energy conservation and environmental protection in the future, obtaining high-efficiency GaN-based LEDs has become an expected goal. Because GaN has a high refractive index (n≈2.5) coefficient, only a small part (about 4%) of light can escape from the surface of the GaN-based epitaxial wafer. In order to allow more light to escape and obtain high-efficiency light, people have developed photonic crystal technology. [0003] Photonic crystals are artificial crystals formed...

Claims

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Application Information

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IPC IPC(8): H01L33/00G03F7/00
Inventor 孙堂友徐智谋刘文吴小峰张晓庆赵文宁王双保
Owner HUAZHONG UNIV OF SCI & TECH
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