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Method for manufacturing silicon nitride heating body

A technology for a silicon nitride heating element and a manufacturing method, which is applied to heating element materials and other directions, can solve the problems of reducing safety and reliability, deteriorating material insulation properties, and large grain boundary stress, and improving reliability and safety. Relieve material stress and reduce the effect of oxidation

Active Publication Date: 2011-08-31
JIANGSU JINSHENG CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The infiltration of carbon elements will deteriorate the insulation performance of the material, reducing safety and reliability
At the same time, due to the short hot-press sintering time and relying on mechanical pressure to strengthen the densification effect, the obtained material has a microstructure with large grain boundary stress and insufficient liquid phase crystallization, which affects the service life of the base material

Method used

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  • Method for manufacturing silicon nitride heating body
  • Method for manufacturing silicon nitride heating body

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Experimental program
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Effect test

Embodiment 1

[0021] The silicon nitride heating element in this embodiment is composed of silicon nitride heating element and a high-temperature metal heating wire arranged in the silicon nitride heating element. The metal heating wire is tungsten wire, molybdenum wire or tungsten-molybdenum alloy wire.

[0022] The manufacturing method of the above-mentioned silicon nitride heating element comprises:

[0023] Step 1. Put the silicon nitride powder and the high-temperature liquid phase sintering aid into absolute ethanol in a weight ratio of 0.96:0.04 to 0.80:0.20 and mix (specifically, a ball mill mixer can be used for mixing), and mix for 10-72 hours Afterwards, the formulation is made through spray granulation;

[0024] Step 2, embedding the metal heating wire in the formula and dry-pressing for molding, then further pressing for molding by cold isostatic pressing of 180-220MPa, and holding the pressure for 3-10 minutes to make a green body;

[0025] Step 3, drying after evenly coatin...

Embodiment 2

[0031] On the basis of embodiment 1, the manufacturing method of the silicon nitride heating element of the present embodiment comprises:

[0032] 92wt% silicon nitride powder, 3wt% Al 2 o 3 , 3 wt% Y 2 o 3 , 1wt% of MgO, 1wt% of AlN was added to 99.9% absolute ethanol and mixed uniformly for 72 hours, and then placed in an explosion-proof spray granulation tower for spray granulation to make a formula.

[0033] Pour the formula into the mold, and then embed the metal heating wire in the powder and dry press to form it. The size is 120*20*10. Then the dry-pressed blank is packaged and put into cold isostatic pressing equipment for isostatic pressing. The pressure of isostatic pressing is 200 MPa, and the holding time is 3-10 minutes. Mix high-purity absolute ethanol and boron nitride fine powder to form a thick slurry, apply a layer of uniform boron nitride isolation layer on the surface of the green body by scraping method, and dry it. A layer of boron nitride isolation ...

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Abstract

The invention relates to a method for manufacturing a silicon nitride heating body, which comprises the following steps of: charging silicon nitride powder and a small amount of high-temperature liquid phase combustion assisting agent into anhydrous ethanol for mixing; after mixing for 10-72 hours, spraying and granulating to obtain a prescription material; then embedding a metal heating wire into the prescription material and drily pressing for moulding; further pressing for moulding by the cold isostatic pressure of 180-220MPa and keeping for 3-12 minutes to obtain a biscuit; then uniformlycoating a boron nitride isolating layer on the surface of the biscuit, drying; carrying out hot press sintering at the sintering pressure of 20-30MPa, the sintering temperature of 1,600-1,900 DEG C and the temperature keeping time of 0.5-4 hours to obtain a blank; and finally, charging the blank into a vacuum atmosphere furnace, keeping the constant temperature of 1,300-1,600 DEG C for 10-24 hours and then naturally cooling to room temperature. The born nitride isolating layer is thick slurry which is formed by mixing boron nitride powder with the silicon nitride powder and blending the mixture with the anhydrous ethanol.

Description

technical field [0001] The invention relates to the technical field of manufacturing methods of electric heating elements, in particular to a manufacturing method of a silicon nitride heating element. Background technique [0002] Silicon nitride is a covalently bonded ceramic, pure Si 3 N 4 The powder cannot be sintered, and a small amount of sintering aid must be added to form a liquid phase at high temperature for liquid phase sintering in order to obtain silicon nitride materials with excellent properties. Commonly used additives include: Al 2 o 3 , MgO, SiO 2 and other metal oxides, Y 2 o 3 , La 2 o 3 , CeO 2 and other rare earth oxides, as well as AlN, Mg 3 N 2 , TiN, ZrN and other nitrides. High-performance silicon nitride ceramics have excellent electrical, thermal and mechanical properties such as insulation, high strength, high temperature resistance, oxidation resistance, thermal shock resistance and high thermal conductivity. [0003] Silicon nitride...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/10H05B3/18C04B35/76C04B35/584
Inventor 冯志峰
Owner JIANGSU JINSHENG CERAMIC TECH
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