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Aluminium nitride ceramic copper-clad substrate and preparation method thereof

A technology of aluminum nitride ceramics and copper-clad substrates, which is applied in the field of ceramic metallization, can solve problems such as difficult to achieve reliable bonding between AlN ceramic substrates and copper foils, and achieve excessive internal stress, easy bonding, and reduced lubrication. The effect of wet corners

Active Publication Date: 2011-10-05
亨新电子工业(常熟)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve the technical problem that the preparation method of aluminum nitride ceramic copper-clad substrate in the prior art is difficult to realize the reliable bonding of AlN ceramic substrate and copper foil

Method used

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Experimental program
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Effect test

preparation example Construction

[0032] The invention provides a method for preparing an aluminum nitride ceramic copper-clad substrate, comprising the following steps:

[0033] Step 1. Magnetron sputtering plating: Sputtering coating is performed on the surface of the cleaned aluminum nitride ceramic substrate by magnetron sputtering, so that a metal mixture coating is formed on the surface of the aluminum nitride ceramic substrate.

[0034] The existing magnetron sputtering method is to fill an appropriate amount of argon in a high vacuum, apply a DC voltage of several hundred volts between the cathode target (column target or planar target) and the anode (coating chamber wall), A magnetron-type abnormal glow discharge is generated in the room to ionize the argon gas. The argon ions are accelerated by the cathode and bombard the surface of the cathode target. The atoms on the surface of the target are sputtered out and deposited on the surface of the substrate to form a thin film. By replacing the target wit...

Embodiment 1

[0063] 1. Preparation of metal mixture coating on the surface of AlN ceramic substrate

[0064] Take a 15mm×15mm×600μm aluminum nitride ceramic substrate (Nippon Maruwa Co., Ltd.), use a multi-arc ion coating machine (Shenzhen Zhenhengchang Industrial Co., Ltd.) for magnetron sputtering, and place the aluminum nitride ceramic substrate on In this equipment, the coating time is 17min, the voltage is 370V, and the current is 17A. The Cu-Mn system target is selected, and the content of Cu and Mn elements in the coating is controlled by controlling the sputtering time of the Cu target and the Mn target. , The composition of the metal mixture coating prepared in this test: Cu 75wt%, Mn 25wt%, and the thickness of the coating is 500nm.

[0065] 2. High temperature sintering treatment

[0066] Place the aluminum nitride ceramic substrate with a metal mixture coating on the surface in a high-temperature furnace (Yixing Qianjin Furnace Equipment Co., Ltd., SX2-10-13) to heat, perform ...

Embodiment 2

[0072] 1. Preparation of metal mixture coating on the surface of AlN ceramic substrate

[0073] Take an aluminum nitride ceramic substrate of 15mm × 15mm × 600 μm (produced by Fujian Huaqing Electronic Material Technology Co., Ltd.), use a multi-arc ion coating machine (Shenzhen Zhenhengchang Industrial Co., Ltd.) to carry out magnetron sputtering plating test, nitrogen The aluminum ceramic substrate is placed in the equipment, the coating time is 27min, the voltage is 320V, and the current is 16A. The Cu-Ti system target is selected, and the Cu, Ti and Cu targets are controlled by controlling the sputtering time of the Ti target. The content of Ti element in the coating, the composition of the metal mixture coating prepared in this test: Cu 93wt%, Ti 7wt%, the thickness of the coating is 900nm.

[0074] 2. High temperature sintering treatment

[0075] Place the aluminum nitride ceramic substrate with a metal mixture coating on the surface in a high-temperature furnace (Yixin...

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Abstract

The invention provides an aluminium nitride ceramic copper-clad substrate which comprises an aluminium nitride ceramic chip, and a copper foil coated on at least one surface of the aluminium nitride ceramic chip, wherein a metal modification layer is formed between the ceramic chip and the copper foil, and the metal modification layer comprises Cu2O, CuAlO2 and a set of compound selected from the following two set of compounds: (1) TixNy and TiO2 wherein x / y is 0.25 to 1; (2) MnO2. In addition, the invention also provides a preparation method of aluminium nitride ceramic copper-clad substrate. In the invention, with a magnetron sputtering method, a metal mixture coating is formed on the surface of the dense sintering of the aluminium nitride ceramic chip, as the dense sintering of the metal mixture coating through high temperature sintering, the formed metal modification layer can improve the surface of the aluminium nitride ceramics chip and forms a good bonding with the copper foil.

Description

technical field [0001] The invention relates to the field of ceramic metallization, in particular to an aluminum nitride ceramic copper-clad substrate and a preparation method thereof. Background technique [0002] The packaging materials of most power hybrid integrated circuits have been using Al 2 o 3 and BeO ceramics, but due to factors such as performance, environmental protection, and cost, these materials cannot fully meet the needs of the development of power electronic devices. Therefore, a new type of ceramic-AlN (aluminum nitride) ceramic with superior comprehensive performance will undoubtedly become the traditional Al material. 2 o 3 and alternative materials for BeO ceramics. with Al 2 o 3 Compared with BeO ceramics, AlN ceramics not only have higher thermal conductivity (theoretical thermal conductivity reaches 320W / mK), but also have a good thermal expansion coefficient with semiconductor materials such as Si and Ge, and have good electrical properties a...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/12
Inventor 任永鹏林信平张保祥
Owner 亨新电子工业(常熟)有限公司
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