Polyphenylacetylene silicon oxide borane and preparation method thereof

Abstract

The invention discloses polyphenylacetylene silicon oxide borane and a preparation method thereof. The structure of the prepared polyphenylacetylene silicon oxide borane is shown as a formula I, wherein R1 and R2 refer to CH3, C6H5, and n is 1-100. The preparation method comprises the following steps of: performing hydrogen chloride removal reaction on trichlorosilane and alkyl boric acid to obtain polychlorosilicon oxide borane; and reacting the polychlorosilicon oxide borane with phenylacetylenelithium to obtain the polyphenylacetylene silicon oxide borane. In the polymer, a repeat unit contains polyphenylacetylene, so the magnitude of the polymerization degree cannot influence the crosslinking density of the polymer. The molecular weight of the polymer can be controlled by proportioning raw materials. In high temperature environment, the surface of a material is vitrified, and a ceramic layer such as a silicon carbide layer or a boron carbide layer is formed, so that the inner material is isolated from heat and oxygen; therefore, the thermal oxidation performance of the structural material is improved. The polyphenylacetylene silicon oxide borane is applied to preparing ceramic precursors, high-performance composite material matrixes, ablation resistant materials, high temperature resistant coatings and the like. The formula I is shown in the specifications.

Description

technical field

[0001] The invention belongs to a polyphenylethynylsiloxaborane and a preparation method thereof. Background technique

[0002] Silicon-containing polymers, such as polysilane, polycarbosilane, polynitrosilane and polycarbosilazane, have unique physical and chemical properties and are widely used in aviation, aerospace and other fields. Silicon-containing polymers with carbon-carbon triple bonds in the molecular chain have become a research hotspot in recent years because of their excellent high temperature resistance and molding process performance. Japan's Itoh synthesized a silicon-containing polymer with a carbon-carbon triple bond in the molecular chain [-Si(Ph)H-C≡C-C 6 h 4 -C≡C-] (referred to as MSP), the study found that the Td of its cured product under argon and air 5 (The temperature when the mass loss reaches 5%) is 860°C and 567°C respectively; Chinese patent CN1421446A "Phenylethynylsilane and its preparation method" and CN1763053A "New Synth...

Images