a solar cell

Abstract

The present invention involves a solar cell. The solar cell includes a silicon wafer 1, and the reflux layer 12 prepared by the Silicon 1 on the Silicon 1, the velvet 13 prepared on the silicon tape 1, use the etching method on the velvet 13The upper -made silicon nanometer layer 14, the passivation layer 5, the upper electrode grid line 6 and the lower electrode 7.Silicon 1 does not change the type of conductivity in the heat diffusion and the PN knot required to form a solar cell.The surface of the solar cell of this structure is the surface 13, and the silicon nano layer 14 is carved on it.The absorption and utilization rate of ultraviolet light, thereby improving the efficiency of solar cells.

Description

technical field [0001] The invention relates to a new bulk silicon solar cell, in particular to a solar cell in which a silicon nanometer layer is prepared on a textured surface structure of a silicon wafer. Background technique [0002] Solar energy is an inexhaustible clean energy. A solar cell is a device that converts sunlight directly into electricity. Among them, bulk silicon solar cells including monocrystalline silicon and polycrystalline silicon solar cells have always occupied an important position in this field. [0003] An important part of improving the conversion efficiency of solar cells is to reduce the reflectivity of incident light and enhance the absorption and utilization of incident light. Usually the methods for reducing reflectivity include: (1) preparing one or more layers of antireflection film; (2) using chemical etching method to prepare pyramid structure or inverted pyramid structure or other pit structures etc. as suede to reduce reflectivity; ...

AI Technical Summary

Problems solved by technology

The above methods either require expensive equipment, or the reflectivity is still relatively large, and the light absorption utilization rate still needs to be improved

Wherein item (2), the suede microstructure in the prior art is mainly a pyramid structure, an inverted pyramid structure, or a pit structure, and the size of a single pyramid, an inverted pyramid, and a pit is generally greater than 1 micron, or within 1 micron. left and right, without the quantum size effect of nanomaterials

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