A white light led without phosphor powder

A phosphor-free, white light technology, applied in the field of white light LEDs, can solve problems such as difficult control of uniformity and consistency, uneven color of white light, and reduced efficiency, so as to improve energy conversion efficiency and lifespan, improve color rendering index, The effect of improving quality

Inactive Publication Date: 2011-12-21
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to control the uniformity and consistency, which will inevitably lead to large chromaticity differences between devices; when the light is emitted, the color of white light will be uneven, resulting in local yellowish or bluish uneven spots.
When the ambient temperature is too high or the heat dissipation is poor, the conversion

Method used

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  • A white light led without phosphor powder
  • A white light led without phosphor powder
  • A white light led without phosphor powder

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0030] Example 1:

[0031] 1. Clean the substrate. The ion-implanted sapphire substrate is ultrasonically cleaned in HCl, acetone, absolute ethanol, and deionized water, and then placed in a reactor;

[0032] 2. Fill in hydrogen (H 2 ) Rinse at 1020°C for 3 minutes;

[0033] 3. Growing 30nm low-temperature nucleation layer GaN at 550°C;

[0034] 4. Annealing at 750°C for 5 minutes;

[0035] 5. Grow 2μm undoped GaN at 1050°C;

[0036] 6. Grow 2μm silicon-doped n-type GaN at 1050°C;

[0037] 7. Baking, cleaning, luminous ion implantation, including erbium ions (Er 3+ ) Or praseodymium ion (Pr 3+ ), the green erbium ion (Er 3+ ) Or cerium ion (Ce 3+ );

[0038] 8. Annealing.

[0039] 9. Grow 5 cycles of In between 700-850 degrees 0.24 Ga 0.76 N 3nm / GaN 10nm blue quantum well;

[0040] 10. Grow Mg doped with 20nm thick Al at 1050°C 0.15 Ga 0.85 N electron blocking layer;

[0041] 11. Grow Mg-doped p-type GaN at 1050°C;

[0042] 12. Annealing at 750°C for 20 minutes;

[0043] 13. After the standard...

Example Embodiment

[0044] Example 2

[0045] 1. Clean the substrate. The ion-implanted sapphire substrate is ultrasonically cleaned in HCl, acetone, absolute ethanol, and deionized water, and then placed in the MOCVD reactor;

[0046] 2. Fill in hydrogen (H 2 ) Rinse at 1020°C for 3 minutes;

[0047] 3. Growing 30nm low-temperature nucleation layer GaN at 550°C;

[0048] 4. Annealing at 750°C for 5 minutes;

[0049] 5. Grow 2μm undoped GaN at 1050°C;

[0050] 6. Baking out, cleaning, ion implantation of red erbium ions (Er 3+ ) Or praseodymium ion (Pr 3+ );

[0051] 7. At 750°C, MBE grows 2μm silicon-doped n-type GaN;

[0052] 8. Annealing.

[0053] 9. Grow 5 cycles of In between 700-850°C 0.24 Ga 0.76 N 3nm / GaN 10nm blue quantum well;

[0054] 10. Take out the sample, clean it, and place it in a molecular beam epitaxy (MBE) reactor;

[0055] 11. At 520°C and gas flow ratio Ga:In=3:2, grow 5 cycles of InGaN / GaN self-assembled quantum dot layer;

[0056] 12. Grow Mg doped with 20nm thick Al at 740°C 0.15 Ga 0.85...

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Abstract

The invention relates to a white light LED without fluorescent powder. A light-emitting diode is grown on a sapphire substrate; ion implantation of relevant color light is performed during the growth of the light-emitting diode. The implanted ions are excited by the light emission of the light emitting diode to emit light of the corresponding color, and various lights are mixed to generate white light, realizing a single-device white light emitting diode without phosphor. The white light LED provided by the present invention has no fluorescent powder, improves the energy conversion efficiency and life of the LED, improves the quality of the outgoing light, the stability of light emission and the repeatability of the product; The color rendering index lowers its color temperature.

Description

technical field [0001] The invention relates to a white light LED without fluorescent powder, which belongs to the technical field of semiconductor lighting. Background technique [0002] As a new high-efficiency solid-state light source for lighting, semiconductor white light-emitting diode (white LED) is another leap in the history of human lighting, and its economic and social significance is huge. The LED adopts solid packaging, the structure is firm, and the life span can reach more than 100,000 hours. LED also has a series of characteristics such as low working voltage, low power consumption, high luminous efficiency, extremely short response time, pure light color, light weight, and small size. The industry called it "the third revolution in the field of lighting" following the fire lighting and Edison's invention of the electric light. [0003] At present, white light emitting methods include three primary color methods, ultraviolet LED + red, green and blue (RGB) ...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/32
Inventor 孟宪权刘义鹤于胜
Owner WUHAN UNIV
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