Method for doping silicon wafer with colloidal silicon nano particles

A nanoparticle and colloidal silicon technology, applied in diffusion/doping, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of complex equipment, high price, low production efficiency, etc., and achieve process simplification and simplicity The effect of selection doping

Active Publication Date: 2012-02-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantages of the ion implantation method are that the equipment is complicated, the price is expensive, and the production efficiency is low.

Method used

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  • Method for doping silicon wafer with colloidal silicon nano particles
  • Method for doping silicon wafer with colloidal silicon nano particles
  • Method for doping silicon wafer with colloidal silicon nano particles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Obtain phosphorus-doped silicon particles of 18 nanometers whose surface is passivated by hydrogen from the plasma preparation system of silicon particles. The standard deviation of the size distribution of silicon particles is 9% of the average size, and the atomic percentage of phosphorus doping in silicon particles is 5%. The phosphorus-doped silicon particles are placed in air, and they oxidize naturally at room temperature. After 60 days of natural oxidation, put the phosphorus-doped silicon particles with an oxide film on the surface into a mixed solution of ethanol and water (the volume ratio of ethanol and water is 5:2), and use a shear emulsifier to make the phosphorus-doped silicon particles as much as possible. dispersion. At a shear rate of 2000r / min and a reaction temperature of 70°C, 25% by mass of the silane coupling agent CH 2 =C(CH 3 )COO(CH 2 ) 3 Si(OCH 3 ) 3, adjust the pH value of the system to about 4 with oxalic acid solution, and obtain pho...

Embodiment 2

[0032] Obtain phosphorus-doped silicon particles of 44 nanometers surface passivated by hydrogen from the plasma preparation system of silicon particles. The standard deviation of the size distribution of silicon particles is 15% of the average size, and the atomic percentage of phosphorus doping in silicon particles is 8%. Put phosphorus-doped silicon particles in a mixed solution of ethanol and acrylic acid (the volume ratio of ethanol and acrylic acid is 3:1), and carry out hydrosilylation reaction under ultraviolet radiation until the mixed solution becomes clear, so as to obtain the surface through Modified silicon particles. The surface-modified phosphorus-doped silicon particles are separated from the mixed solution by centrifugal separation, and then dispersed in ethanol to obtain colloidal silicon nanoparticles. The concentration of silicon particles in the obtained colloidal silicon nanoparticles was 20% (wt). Soak a 1.5 cm x 1.5 cm N-type undoped silicon wafer in ...

Embodiment 3

[0034] Obtain phosphorus-doped silicon particles of 7 nanometers whose surface is passivated by hydrogen from the plasma preparation system of silicon particles. The standard deviation of the size distribution of silicon particles is 18% of the average size, and the atomic percentage of phosphorus doping in silicon particles is 16.6%. Put phosphorus-doped silicon particles in a mixed solution of trimethylbenzene and n-octadecene (the volume ratio of trimethylbenzene and n-octadecene is 20:1), and carry out hydrosilylation reaction at a temperature of 250°C until the mixed solution becomes Clear, so as to obtain silicon particles with 18 carbon organic molecular chains on the surface. The surface-modified phosphorus-doped silicon particles are separated from the mixed solution by centrifugal separation, and then dispersed in toluene to obtain colloidal silicon nanoparticles. The concentration of silicon particles in the obtained colloidal silicon nanoparticles was 8% (wt). So...

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Abstract

The invention discloses a method for doping a silicon wafer with colloidal silicon nano particles. The method comprises the following steps of: modifying surface of doping nano silicon particles, and dispersing the silicon particles with the modified surface in a solvent to manufacture colloidal silicon nano particles; and forming a film of the colloidal silicon nano particles on a silicon wafer which is subjected to pretreatments of decontamination and removal of an oxidation layer, carrying out heat treatment firstly at a temperature of 200-500 DGE C for 5-60 minutes, carrying out heat treatment in an oxygen atmosphere at a temperature of 750-1100 DEG C for 30-120 minutes again, and forming a doping layer on the near surface of the silicon wafer. Silicon element in raw materials selected in the invention is rich in the earth crust, obtained easily and non-toxic. In addition, by applying the colloidal silicon nano particles, the doping process of the silicon wafer is simplified and the doping in selective regions can be simply and conveniently realized.

Description

technical field [0001] The invention relates to the field of optoelectronic materials, in particular to a method for doping a silicon wafer by forming a film of colloidal silicon nanoparticles on the surface of the silicon wafer. Background technique [0002] At present, the semiconductor manufacturing industry is developing rapidly, and doping is a very important step in the semiconductor manufacturing process. For example, only by doping P-type and N-type impurities into the semiconductor can P-type and N-type semiconductors be obtained, and a PN junction can be obtained. The PN junction is the key structure of many semiconductor devices such as solar cells, junction transistors, and integrated circuits. Therefore, semiconductor doping is of great significance. [0003] The most common semiconductor doping methods in industry are diffusion and ion implantation. For example, for silicon, which is the most widely used semiconductor, a PN junction can be formed by doping p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/225C30B31/02
Inventor 皮孝东高煜杨德仁
Owner ZHEJIANG UNIV
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