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Method for preparing titanium oxide nano wire with self-induction chemical vapor deposition method

A chemical vapor deposition, titanium oxide technology, applied in chemical instruments and methods, from chemically reactive gases, titanium dioxide, etc., can solve the problems of uncertain effects of nanowire performance, inappropriate large-area preparation, template species doping, etc. , to achieve the effect of low equipment requirements, avoiding destructive effects and large output

Active Publication Date: 2014-04-09
瑞金市工业投资发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the template method can prepare nanowires on the substrate, the template method is restricted by the size of the template and is not suitable for large-scale preparation, and the nanowires need to be separated from the template before use. Doping, and the prepared nanowires are generally polycrystalline, these factors will have an uncertain impact on the performance of the nanowires, thus limiting its application

Method used

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  • Method for preparing titanium oxide nano wire with self-induction chemical vapor deposition method
  • Method for preparing titanium oxide nano wire with self-induction chemical vapor deposition method
  • Method for preparing titanium oxide nano wire with self-induction chemical vapor deposition method

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Effect test

Embodiment 1

[0031] Reaction temperature 600 o C, TiCl 4 constant temperature at 40 o C, TiCl 4 The pipeline passed through is insulated to 50 o C, TiCl 4 、SiH 4 and N 2 Mixing, adjust the total gas flow to 1L / min, Si / Ti molar ratio to 1:1, N 2 The volume percentage is 99.6%, the pressure of each gas at the inlet of the gas mixing chamber is 130KPa, the deposition system pressure is maintained at 70KPa, and the deposition time is about 120 seconds. Then turn off the SiH 4 , the TiCl 4 , O 2 and N 2 Mixing, adjust the gas flow rate to 0.8L / min, O / Ti molar ratio to 1:1, N 2 The volume percentage is 99.6%, the growth time is 1 hour, and Ti is formed on the glass substrate 5 Si 3 Thin films and anatase phase TiO 2 Nanowires. See the attached table for the results.

Embodiment 2

[0033] Reaction temperature 750 o C, TiCl 4 constant temperature at 45 o C, TiCl 4 The pipeline passing through is insulated to 60 o C, TiCl 4 、SiH 4 and N 2 Mixing, adjust the total gas flow to 1.5L / min, Si / Ti molar ratio to 2:1, N 2 The volume percentage is 99.1%, the pressure of each gas at the inlet of the gas mixing chamber is 140KPa, the deposition system pressure is maintained at 80KPa, and the deposition time is about 200 seconds. Then turn off the SiH 4 , the TiCl 4 , O 2 and N 2 Mixing, adjust the gas flow rate to 0.5L / min, O / Ti molar ratio to 2:1, N 2 The volume percentage is 99.1%, the growth time is 3 hours, and Ti is formed on the glass substrate 5 Si 3 with TiSi2 Composite thin films and rutile phase TiO 2 Nanowires. See the attached table for the results.

Embodiment 3

[0035] Reaction temperature 500 o C, TiCl 4 constant temperature at 55 o C, TiCl 4 The pipeline passed through is insulated to 70 o C, TiCl 4 、SiH 4 and N 2 Mixing, adjust the total gas flow to 2.5L / min, Si / Ti molar ratio to 3:1, N 2 The volume percentage is 98.0%, the pressure of each gas at the inlet of the gas mixing chamber is 140KPa, the deposition system pressure is maintained at 100KPa, and the deposition time is about 60 seconds. Then turn off the SiH 4 , the TiCl 4 , O 2 and N 2 Mixing, adjust the gas flow rate to 1L / min, O / Ti molar ratio to 5:1, N 2 The volume percentage is 97.0%, the growth time is 0.5 hours, and TiSi is formed on the glass substrate 2 Thin films and anatase phase TiO 2 Nanowires. See the attached table and figure 2 .

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Abstract

The invention discloses a method for preparing a titanium oxide nano wire with a self-induction chemical vapor deposition method, which is characterized by comprising the following steps: using TiCl4 as a Ti source, O2 as an O source, SiH4 as a Si source and N2 as diluent gas and a protective atmosphere; first, generating a titanium silicide thin film layer on a glass substrate; and then, growing a high-density monocrystalline titanium oxide nano wire in situ on the titanium silicide thin film layer with a thermal oxidation method; and finally, naturally cooling a sample to a room temperature under the protection of the N2. The method for preparing the titanium oxide nano wire with the self-induction chemical vapor deposition method has low requirements on equipment and has a great yield and high efficiency; the titanium oxide nano wire can be conveniently prepared on various solid substrates; the immobilization problem of the nano wire is successfully solved; and nano wires with various appearances and nano wires with different crystal phase compositions can be obtained through changing preparation conditions.

Description

technical field [0001] The invention relates to a preparation method of titanium oxide nanowires. Background technique [0002] As a wide-bandgap semiconductor, titanium dioxide has high tolerance for full-spectrum deep oxidation of various organic pollutants, and it has good chemical stability, wear resistance, low cost, and non-toxicity, so it has become the most Photocatalysts with potential applications. With the development of nanotechnology, the research of titanium oxide nanowires has also entered people's field of vision. The huge aspect ratio of titanium oxide nanowires makes it have more excellent photocatalytic performance. At present, the successful preparation methods of titania nanowires are basically sol-gel method and alumina template method. However, the nanowires prepared by the sol-gel method are not grown on a solid substrate. Although nano-titanium oxide has high activity, it is easy to form aggregates in an aqueous solution system, and it is difficul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B29/62C30B25/00C01G23/07
Inventor 杜军黄晶晶余雁斌肖昭强石佳光罗美张文龙彭海龙邹建国
Owner 瑞金市工业投资发展有限公司
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