Metal porphyrin-diazosulfide organic semiconductor material as well as preparation method and application thereof
A technology of benzothiadiazole and organic semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, organic chemistry, etc., can solve the problems of limiting the application range of organic semiconductor materials, lack of literature and patent reports, etc., and achieve good thermal stability Sex and environmental stability, improve carrier mobility, and improve the effect of utilization
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[0043] The preparation method of metalloporphyrin-benzothiadiazole organic semiconductor material designed by the present invention, the steps are as follows:
[0044] Step S1: Dissolving dipyrromethane (a), the first silafluorene derivative (b) and the second silafluorene derivative (c) in a molar ratio i:j:k in the first organic compound containing the oxidizing agent and the first catalyst Solvent, at a temperature of 20-100°C, react for 1-24 hours to obtain a silfluorene porphyrin derivative (d); in the formula, R 1 , R 2 , R 3 , R 4 for H, C 1 -C 32 Alkyl, phenyl, containing one or more C 1 -C 32 Alkylbenzene or alkoxybenzene; the reaction formula is as follows:
[0045]
[0046] Wherein, i:j:k=1:1~100:1~100, and i=j+k, i≥j>0; the first catalyst is propionic acid, trifluoroacetic acid; the oxidizing agent is dichloro Dicyanobenzoquinone; the first organic solvent is one or both of chloroform and dichloromethane;
Embodiment 1
[0065] This embodiment discloses a silicon fluorene zinc porphyrin-benzothiadiazole organic semiconductor material with the following structure
[0066]
[0067] In the above formula, n=78;
[0068] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0069] 1. Synthesis of 4,7-bis(tributyltin)-2,1,3-benzothiadiazole
[0070]
[0071] In a 500mL three-necked flask, add 1.21g of 4,7-dibromo-2,1,3-benzothiadiazole, 400mL of tetrahydrofuran, cool the system down to -30°C, add dropwise 3.5mL of n-butyllithium (2.5 M), then react at -30°C for 1h, and then add SnBu at one time 3Cl 2.68g, reacted at -30°C for 30min, then naturally warmed to room temperature, and stirred overnight. The reactant was poured into ice water, extracted with ether, dried over anhydrous magnesium sulfate, the solvent was distilled off under reduced pressure, and the product was separated by column chromatography with silica gel / petroleum ether (30-60° C.) to ...
Embodiment 2
[0090] This embodiment discloses a silicon fluorene iron porphyrin-benzothiadiazole organic semiconductor material with the following structure
[0091]
[0092] In the above formula, n=56;
[0093] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0094] 1. Synthesis of 4,7-bis(tributyltin)-2,1,3-benzothiadiazole
[0095] Its preparation sees embodiment 1 for details.
[0096] 2. Synthesis of 5-(9'-methyl-9'-hexadecyl)silafluorene-15-(9'-docosyl)silafluorene porphyrin
[0097]
[0098] Set up an anhydrous and oxygen-free device, weigh the intermediates 2-aldehyde-9-methyl-9-hexadecylsilafluorene (0.45g, 1mmol), 2-aldehyde-9-docosylsilafluorene ( 0.66g, 1mmol), dipyrromethane (0.30g, 2mmol), dissolved in 250ml of dichloromethane, blown nitrogen for 30min, added 2ml of trifluoroacetic acid into the syringe, stirred at 100°C for 1h, then added dichlorodicyanobenzene Quinone (DDQ) (1.82g, 8mmol), continue stirring at room temp...
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