Preparation method of beta-nano-SiC

A nano-silicon carbide and carbon-silicon technology, applied in chemical instruments and methods, carbon compounds, nanotechnology, etc., to achieve the effects of simple equipment, low production cost, and easy mass production

Active Publication Date: 2012-05-02
SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is no report on the synthesis of β-nanometer silicon carbide using cheap water glass and starch or sucrose

Method used

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  • Preparation method of beta-nano-SiC
  • Preparation method of beta-nano-SiC

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1. Weigh 10 grams of starch and mix with 11 grams of industrial water glass, stir evenly, let stand for 5 minutes, and then dry at 70°C for 12 hours.

[0019] 2. Put the dried product into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1200°C, and react at constant temperature for 10 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0020] 3. The obtained reaction product was oxidized in air at 700°C for 3 hours, then soaked in a mixed acid of hydrochloric acid and hydrofluoric acid with a volume ratio of 1:1.5 for 12 hours, and finally washed, filtered, and dried to obtain a product with a diameter of 3-50nm. , β-silicon carbide nanofibers with micron-scale lengths.

Embodiment 2

[0022] 1. Weigh 15 grams of sucrose and mix it with 30 grams of industrial water glass, stir well and let stand for 15 minutes, then dry at 90°C for 10 hours.

[0023] 2. Put the dried product into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1300°C, and react at constant temperature for 6 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0024] 3. The obtained reaction product was oxidized in air at 600°C for 5 hours, then soaked in a mixed acid of hydrochloric acid and hydrofluoric acid with a volume ratio of 1:2 for 15 hours, and finally washed, filtered, and dried to obtain a product with a diameter of 10-90nm. , β-silicon carbide nanowires with micron-scale lengths.

Embodiment 3

[0026] 1. Weigh 25 grams of starch and mix it with 100 grams of industrial water glass, stir well and let stand for 25 minutes, then dry at 110°C for 9 hours.

[0027] 2. Put the dried product into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1330°C, and react at constant temperature for 7 hours, then cool naturally to room temperature under an argon gas atmosphere.

[0028] 3. The obtained reaction product was oxidized in air at 800°C for 2 hours, then soaked in a mixed acid of hydrochloric acid and hydrofluoric acid with a volume ratio of 1:3 for 24 hours, and finally washed, filtered, and dried to obtain a product with a diameter of 20-200nm. , β-silicon carbide nanowires with micron-scale lengths.

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Abstract

A preparation method of beta-nano-SiC comprises the following steps of: mixing starch or cane sugar with soluble glass according to the mass ratio of 1:1-5, or mixing starch or cane sugar with nitrate according to the mass ratio of 1:0.01-0.5, then mixing with soluble glass with the mass ratio of starch to soluble glass being 1:1-5, standing for 5-30 minutes after uniformly mixing, dying the mixture at the temperature of 60-120 DEG C for 5-20 hours to obtain a dried substance; carrying out a carbothermal reduction reaction for 3-20 hours by heating the dried substance to 1100-1400 DEG C underthe protection of argon gas, and naturally cooling to room temperature after the reaction so as to obtain a primary reaction product; roasting the primary reaction product at the temperature of 600-800 DEG C for 1-5 hours, and removing unreacted carbon; immersing for 12-48 hours by using a mixed acid composed of hydrochloric acid and hydrofluoric acid at the volume ratio of 1:1-5, removing superfluous silica from the product, washing, filtering and drying to finally obtain beta-nano-SiC. The preparation method provided by the invention requires low cost, has a simple technology, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to a preparation method of β-nanometer silicon carbide. Background technique [0002] Silicon carbide (SiC) is a wide bandgap (2.3ev) semiconductor material with a series of excellent properties, such as high mechanical strength, good chemical stability, excellent thermal conductivity and electrical conductivity, strong thermal stability, etc., at high temperature It has huge potential application value in semiconductor devices with high frequency, high power and nanoscale electronics and optoelectronics. It can also be widely used as a reinforcing agent for ceramics, metals and polymer matrix composites. In addition, silicon carbide nanomaterials can be used under harsh conditions such as high temperature, high pressure, and strong corrosion, and are ideal materials for catalyst supports in current chemical reactions. Therefore, it is very important to develop a low-cost and large-scale preparation technology of silicon carbide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36B82Y40/00C01B32/963
Inventor 郭向云郝建英靳国强王英勇童希立
Owner SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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