Electric field passivation backside point contact crystalline silicon solar battery and process for producing same
A back point contact, solar cell technology, applied in the field of solar cells, can solve the problems of large equipment cost, high cost, difficult industrial production, etc., and achieve the effect of reducing the back recombination rate and manufacturing cost.
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Embodiment 1
[0066] Such as Figure 1 to Figure 12 As shown, the preparation process of the electric field passivated rear point contact crystalline silicon solar cell described in this embodiment, its specific steps are as follows:
[0067] (1) open four through holes 2 with a laser on the silicon wafer substrate 10;
[0068] (2) On both sides of the silicon wafer substrate 10, the n+ layer 4 is formed by high-temperature diffusion in a diffusion furnace;
[0069] (3) remove the phosphosilicate glass and the back n+ layer 4 on both sides of the silicon wafer substrate 10;
[0070] (4) form a thin silicon dioxide layer 6 on both sides of the silicon wafer substrate 10 by thermal oxidation;
[0071] (5) coating a layer of silicon nitride (SiNx:H) i.e. a composite passivation film 8 on the back side of the silicon wafer substrate 10, and removing the silicon dioxide layer on the front surface of the silicon wafer substrate 10 with hydrofluoric acid;
[0072] (6) coating silicon nitride an...
Embodiment 2
[0082] The specific preparation process steps of this embodiment and the above-mentioned embodiment 1 are exactly the same, and its difference is:
[0083] The silicon wafer substrate 10 is a p-type single crystal silicon wafer, the resistivity of the silicon wafer is 1-10 Ω.cm, and the thickness is 150-180 μm; the diameter of the through hole 2 drilled by the laser is 0.5-0.8 mm; In the formed composite passivation film of silicon dioxide 6 and silicon nitride 8, the thickness of silicon dioxide 6 is 10-15nm, the thickness of silicon nitride 8 is 80-100nm; the thickness of silicon nitride anti-reflection film 20 is 70-80nm ,.
[0084] The paste-free area of the screen-printed mesh pattern on the back of the silicon wafer is a circular array with a diameter of 400 μm and a paste thickness of 10-20 μm. The paste-free area accounts for 30% of the back area; The aluminum oxide layer 14 has a thickness of 100-120nm; the concentration of boric acid 16 sprayed in the tank in the ...
Embodiment 3
[0086] The specific preparation process steps of this embodiment and the above-mentioned embodiment 1 are exactly the same, and its difference is:
[0087] The silicon wafer substrate 10 is also a p-type single crystal silicon wafer, the resistivity of the silicon wafer is 5-10 Ω.cm, and the thickness is 200-220 μm.
[0088] The diameter of the through hole 2 drilled by the laser is 1.0-1.2 mm. In the formed silicon dioxide 6 and silicon nitride 8 composite passivation film, the thickness of the silicon dioxide 6 is 20-40 nm, and the thickness of the silicon nitride 8 is 120-40 nm. 150 nm; the thickness of the silicon nitride anti-reflection film 20 is 70-80 nm. The paste-free area of the screen-printed mesh pattern on the back of the silicon wafer is a square array with a side length of 500 μm and a paste thickness of 15-25 μm. The paste-free area accounts for 50% of the total area of the back surface. The aluminum oxide layer 14 plated on the mesh pattern has a thicknes...
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