Method for preparing hexagonal piece self-assembled gamma-MnS microcrystalline spheres

Abstract

The invention relates to a method for preparing hexagonal piece self-assembled gamma-MnS microcrystalline spheres. The method comprises the following steps: 1, adding manganese nitrate to deionized water to prepare a solution A; 2, adding thioacetamide to the solution A to obtain a solution B; 3, adding hexamethylenetetramine to the solution B to form a predecessor solution C; 4, allowing the predecessor solution to stand at room temperature to obtain a solution D; 5, dumping the solution D to a microwave hydrothermal reaction vessel, sealing the reaction vessel, putting the reaction vessel into a temperature and pressure controlled microwave hydrothermal reaction instrument, carrying out a reaction in a temperature control mode or a pressure control mode, and naturally cooling the reaction vessel after ending the reaction; and 6, opening the hydrothermal reaction vessel, centrifuging and collecting the obtained product, washing the product by deionized water and waterless ethanol respectively, and drying the product in a vacuum drying box to obtain the hexagonal piece self-assembled gamma-MnS microcrystalline spheres. The method which adopts a simple microwave hydrothermal process to prepare the microcrystalline spheres has the advantages of short reaction period, low energy consumption, and realization of one-step completing of the reaction in a liquid phase without post treatments. The prepared gamma-MnS microcrystalline spheres are self-assembled by regular hexagonal pieces, and the sizes of the gamma-MnS microcrystalline spheres are uniform.

Description

technical field [0001] The invention belongs to a preparation method of manganese sulfide, a semiconductor material with a wide band gap, and in particular relates to a preparation method of gamma-MnS microcrystal spheres self-assembled from hexagonal sheets. Background technique [0002] Metal sulfides are an important class of semiconductor materials, which are widely used in optical devices, photovoltaic cells, energy storage media, and catalysis. MnS is a weakly magnetic semiconductor of VIIB-VIA with a bandgap width of 3.7eV. It has potential applications in the preparation of solar cell window / buffer materials and short-wave optoelectronic devices [ki s J, Tang K B, Yang Q, et al.Solvothermal synthesis of metastable γ-MnS hollow spheres and control of their phase[J]. Eur J lnorg Chem, 2005: 4124-4128.] MnS generally has three phases, namely octahedral coordination, green and stable rock-salt structure α- MnS(RS); tetrahedrally coordinated, pink metastable zinc blende ...

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Problems solved by technology

In addition, radio frequency irradiation [Lokhande C D, Ennaoui A, Patil P S, et al. Process and characterization of chemical bath deposited manganese sulphide (MnS) thin films [J]. Thin solid films, 1998, 330: 70-75.] , microwave irradiation method [Wang S B, Li K W, Zhai R, et al.Synthwsis of metastable γ-manganese sulfide crystallite by microwave irradiation[J]. Mater Chem Phys, 2005, 91: 298-300.], molecular beam epitaxy (molecular beam epitaxy, MBE) [OKAJIMA M, TOHDA J. Heteroepitaxial growth of MnS on GaAs substrates [J]. J Cryst Growth, 1992, 117 (1-4): 810-815.], reflux method [Qi Yuanchun, Zhao Yanbao, Xu Hongtao. Preparation and characterization of γ-MnS nanocrystals with controllable morphology [J]. Chemical Research, 2006, 17(6): 60-62.] and other preparation methods have also been applied to the synthesis of MnS nanomaterials, Yet these methods are all more complicated, and technique is difficult to control, and reaction rate is lower, and reaction time is longer, and because a large amount of H is arranged in the process of synthetic manganese sulfide 2 S gas generation, if the reaction is carried out in an open system, it will inevitably cause some pollution to the environment

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