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10560 NANO bandpass infrared filter and making method of same

An infrared filter and the technology of its manufacturing method are applied in the field of 10560nm bandpass infrared filter and its manufacture, which can solve the problems of low signal-to-noise ratio, inability to meet the needs of market development, poor precision, etc., and achieve good interference, Accurate confirmation of leakage points and reduction of background interference signals

Active Publication Date: 2012-07-18
MULTI IR OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sulfur hexafluoride (SF6) gas infrared detector is a device that uses sulfur hexafluoride (SF6) gas to detect the infrared spectrum with a very high absorption rate with a center wavelength of 10560 nanometers. The 10560 nanometer narrow-band infrared filter is used as The core components of the sulfur hexafluoride (SF6) gas infrared detector have been purchased from abroad for a long time, and the peak transmittance of the narrow band can only be about 60%; its signal-to-noise ratio is low and the accuracy is poor , can not meet the needs of market development

Method used

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  • 10560 NANO bandpass infrared filter and making method of same
  • 10560 NANO bandpass infrared filter and making method of same
  • 10560 NANO bandpass infrared filter and making method of same

Examples

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Embodiment 1

[0022] like figure 1 As shown, a kind of 10560 nanometer bandpass infrared filter provided by the present embodiment is:

[0023] (1) Single-crystal germanium Ge with a size of Φ25.4×0.5mm is used as the substrate 1; its surface aperture N≤5, local aperture ΔN≤0.5, parallelism θ≤1'; the surface finish is better than 60 / 40;

[0024] (2) Zinc sulfide ZnS and single crystal germanium Ge are selected as coating materials, and the main film system surface film 2 and the interference cut-off film system surface film 3 are respectively deposited on the two surfaces of the substrate;

[0025] (3) Sub|HLHLH2LHLHLHLHLH2LHLHL|Air is used for the main film system surface film 2; the interference cut-off film system surface film 3 adopts the following structure:

[0026] Sub|0.76(0.5HL0.5H) 5 0.5(0.5HL0.5H) 5 0.35(0.5HL0.5H) 5 0.25(0.5HL0.5H) 6 0.16(0.5HL0.5H) 6 |Air

[0027] The meanings of the symbols in the film system are: Sub is the substrate, Air is air, H is the λc / 4 sing...

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Abstract

The invention discloses a 10560 nano bandpass infrared filter and a making method of the same. The infrared filter is characterized in that a monocrystalline germanium Ge with the dimension Phi being 25.4*0.5mm is adopted as a base plate; the surface iris diaphragm N is less than or equal to 5, the partial iris diaphragm Delta N is less than or equal to 0.5, the parallelism Theta is less than or equal to 1 minute, and the surface smoothness is better than 60 / 40; zinc sulfide ZnS and monocrystalline germanium Ge are adopted for film plating materials, a main film system surface film Sub / HLHLH2LHLHLHLHLH2LHLHL / Air and an interference stop film system surface film Sub / 0.76(0.5HL0.5H)5 0.5 (0.5HL0.5H)5 0.35 (0.5HL0.5H)5 0.25 (0.5HL0.5H)6 0.16(0.5HL0.5H)6 / Air are respectively deposited on the two surfaces of the base plate, and the film plating process conditions are that under the high vacuum (vacuum degree less than or equal to 10-3Pa), heating and baking under 300 DEG C is carried out and the physical gas phase depositing method is adopted for auxiliary film plating with the ion resource. The 10560 nano bandpass infrared filter made through the making method of the same has the peak value transmission amounting to more than 90%, greatly improves the signal noise ratio, satisfactorily restrains the interference of other gases, and improves the detecting precision and efficiency of the instrument.

Description

technical field [0001] The invention relates to a production technology of an infrared filter, in particular to a 10560 nm bandpass infrared filter and a manufacturing method thereof. Background technique [0002] At present, sulfur hexafluoride (SF6) gas is widely used in industry, such as: the refrigeration industry is used as a refrigerant, and the refrigeration range can be between -45 ° C and 0 ° C; the electrical industry uses its high dielectric strength and good Arc extinguishing performance, used as insulating material for high-voltage switches, large-capacity transformers, high-voltage cables and gases; used as anti-adsorbent in mining industry, and used to replace oxygen in coal dust in mines. Sulfur hexafluoride (SF6) gas has excellent insulation performance and arc extinguishing performance, and the corresponding sulfur hexafluoride (SF6) application products have high reliability, less maintenance workload, and long cycle, which are incomparable compared with t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/28G02B1/10B32B9/04B32B15/00C23C14/54C23C14/06C23C14/14
Inventor 吕晶
Owner MULTI IR OPTOELECTRONICS
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