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Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell

A technology of I-III-IV and solar cells, which is applied in the field of solar cells, can solve the problems of reduced cell efficiency and achieve the effects of reduced cross-sectional area, simple process equipment, and low process temperature

Active Publication Date: 2012-08-22
徐东
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, the thickness of the barrier layer is 3 μm, but even if there is a barrier layer, due to the limited thickness, there will always be considerable heteroatoms such as Fe diffused into the absorber layer, which will reduce the battery efficiency. Therefore, the CIGS battery with stainless steel as the substrate The highest efficiency is 17.4%, which is still far behind the efficiency record of 19.9% ​​for glass substrate CIGS cells

Method used

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  • Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell
  • Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell
  • Preparation method for silicon dioxide block layer used for I-III-IV compound solar cell

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preparation example Construction

[0016] The embodiment of the present invention is achieved by providing a method for preparing a silicon dioxide barrier layer for I-III-IV compound solar cells, which includes the following steps:

[0017] S01: Prepare an acid-catalyzed solution of alkyl orthosilicate, the acid-catalyzed solution of alkyl orthosilicate contains molar ratio of 1:(1~5):(0.5~3):(0.001~0.1) Alkyl orthosilicate, isopropanol, H 2 O and HCl;

[0018] S02: Leave the acid-catalyzed solution of alkyl orthosilicate for 0.5-6 hours, then add NH 4 OH solution to obtain silica sol, wherein, in the silica sol, alkyl orthosilicate, isopropanol, H 2 The molar ratio of O and HCl is 1: (3-9): (1-6): (0.001-0.1), the NH 4 The molar ratio of OH to HCl is 1:1 to 4:1;

[0019] S03: Coating the silica sol on the medium in an isopropanol atmosphere;

[0020] S04: Continue to age the medium coated with silica sol for 5 to 75 minutes in an isopropanol atmosphere, and then soak in an isopropanol solution for aging ...

Embodiment 1

[0030] Under the rapid stirring of a magnetic stirrer, add H 2 O, the mixture of HCl and isopropanol, make TEOS: isopropanol: H 2 The molar ratio of O:HCl is 1:3:1:1.8×10 -3 ; After standing for 2h, add H dropwise to the above solution 2 O, NH 4 A mixture of OH and isopropanol, making TEOS: isopropanol: H 2 O:HCl:NH 4 The molar ratio of OH is 1:3:4:1.8×10 -3 : 3.6×10 -3 , to obtain silica sol. In an isopropanol atmosphere, apply a certain viscosity of silica sol on a clean silicon wafer, continue aging in an isopropanol atmosphere for 15 minutes, and then immerse in an isopropanol solution for aging for 1 day. The aged wet gel film passed through the N 2 Under the atmosphere, the temperature is rapidly raised and dried in a rapid heat treatment furnace. The temperature rise process is a temperature rise rate of 20°C / s, rising to 300°C, and then maintaining at this temperature for 30min to obtain the silicon dioxide for the I-III-IV compound solar cell. barrier layer, ...

Embodiment 2

[0032] Under the rapid stirring of a magnetic stirrer, add H 2 O, the mixture of HCl and isopropanol, make TEOS: isopropanol: H 2 The molar ratio of O:HCl is 1:1:0.5:1×10 -3 ; After standing for 6h, add H dropwise to the above solution 2 O, NH 4 A mixture of OH and isopropanol, making TEOS: isopropanol: H 2 O:HCl:NH 4 The molar ratio of OH is 1:6:6:1×10 -3 : 3×10 -3 , to obtain silica sol. In an isopropanol atmosphere, apply a certain viscosity of silica sol on a clean silicon wafer, continue aging in an isopropanol atmosphere for 75 minutes, and then immerse in an isopropanol solution for aging for 3 days. The aged wet gel film passed through the N 2 Under the atmosphere, the temperature is rapidly raised and dried in the rapid heat treatment furnace. The temperature rise process is a temperature rise rate of 10°C / s, raised to 500°C, and then kept at this temperature for 75min, and then placed in a nitrogen and hydrogen mixed atmosphere. High-temperature annealing tre...

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Abstract

The invention relates to the technical field of a solar cell and provides a preparation method for a silicon dioxide block layer used for an I-III-IV compound solar cell. The preparation method comprises the following steps that: acid catalysis solution of ortho-silicic acid alkyl ester is prepared; the acid catalysis solution of the ortho-silicic acid alkyl ester rests for 0.5-6h, and then NH4OH solution is added into the acid catalysis solution, so as to obtain silica sol; the silica sol is coated on a medium in an isopropanol atmosphere; the medium after being coated with the silica sol is aged continuously in the isopropanol atmosphere for 5-75min and then is soaked into isopropanol solution to be aged, so as to obtain an aged gel membrane; and the aged gel membrane is heated and dried, the heating rate is 10-180 DEG C / s, the aged gel membrane is kept for 10-75min after being heated to the temperature of 150-500 DEG C, so as to obtain the silicon dioxide block layer used for the I-III-IV compound solar cell. The preparation method is simple, thereby being suitable for batch production; moreover, the prepared silicon dioxide block layer used for the I-III-IV compound solar cell can effectively improve the efficiency of the solar cell.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a method for preparing a silicon dioxide barrier layer for I-III-IV compound solar cells. Background technique [0002] Typically, I-III-VI compound solar cells are deposited on sodium-containing glass at about 550°C. The highest efficiency of I-III-VI compound solar cells prepared on flexible substrates is copper indium gallium selenide (CIGS) solar cells prepared on stainless steel substrates, and its efficiency can reach 17.4%. Kovar alloys (Fe / Ni / Co alloys) are best matched to molybdenum in terms of thermal expansion coefficients, while titanium foils are best matched to CIGS absorber layers. [0003] The efficiency record of flexible I-III-VI compound solar cells is currently based on stainless steel. The reason is mainly because stainless steel is resistant to high temperatures and can be heated to above 1000°C; at the same time, its expansion coefficient is similar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCC03C17/25C03C2217/213C03C2217/425C03C2218/113C09D1/02H01L31/0749H01L31/18Y02E10/541
Inventor 徐东徐永任昌义
Owner 徐东
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