Method for preparing Si-based binary eutectic in-situ composites

A binary eutectic and composite material technology, which is applied in the directional solidification of eutectic materials, the growth of polycrystalline materials, and the growth of single crystals. The effect of uniform diameter

Active Publication Date: 2012-10-03
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to overcome the problem of material contamination and cracking easily caused by crucible melting in the preparation of silicon-based semiconductor eutectic composite materials by the current traditional solidification method, and to further improve the temperature gradient in the directional solidification process of the current Si eutectic material and refine the structure, the present invention proposes a A method for preparing Si-based semiconductor eutectic self-generated composite materials by high-gradient directional solidification technology in laser levitation zone without crucible

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Embodiment 1

[0034] This embodiment is a method for preparing Si-based semiconductor eutectic autogenous composite material. In this example, Si-CoSi was prepared by high-gradient directional solidification technology in the laser levitation zone. 2 Eutectic self-generated composite materials, the specific process includes the following steps:

[0035] Step 1, preparing Si-based eutectic alloy ingot base material:

[0036] Si with a purity of 99.996% and Co with a purity of 99.999% are used as raw materials, and the eutectic base material is prepared according to the ratio of atomic percentage Si:Co=77.5:22.5; the prepared eutectic base material is loaded into a quartz crucible and placed in the smelting furnace, the smelting furnace is evacuated to less than 2×10 -4 Pa and keep it, gradually heat the melting furnace to 1310°C at a speed of 1kw / 10min to completely melt the raw materials; keep the temperature for 30min; turn off the power and cool with water for 108min to obtain Si-CoSi o...

Embodiment 2

[0042] This embodiment is a method for preparing Si-based semiconductor eutectic autogenous composite material. In this example, Si-TaSi was prepared by high-gradient directional solidification technology in the laser levitation zone. 2 Eutectic self-generated composite materials, the specific process includes the following steps:

[0043] Step 1, preparing Si-based eutectic alloy ingot base material:

[0044] Using Si with a purity of 99.996% and Ta with a purity of 99.999% as raw materials, the eutectic base material raw material is prepared according to the ratio of atomic percentage Si:Co=99.5:1; the prepared eutectic base material raw material is loaded into a quartz crucible and placed in the smelting furnace, the smelting furnace is evacuated to less than 2×10 -4 Pa and keep it, gradually heat the melting furnace to 1450°C at a speed of 1kw / 10min to completely melt the raw materials; keep warm for 30min; turn off the power and cool with water for 138min to obtain Si-T...

Embodiment 3

[0051] This embodiment is a method for preparing Si-based semiconductor eutectic autogenous composite material. In this example, Si-TaSi was prepared by high-gradient directional solidification technology in the laser levitation zone. 2 Eutectic self-generated composite materials, the specific process includes the following steps:

[0052] Step 1, preparing Si-based eutectic alloy ingot base material:

[0053] Si with a purity of 99.996% and Ta with a purity of 99.999% are used as raw materials, and the raw material of the eutectic base material is prepared according to the ratio of Si:Ta=99:1 in atomic percentage; the prepared eutectic base material raw material is packed into quartz Crucible and placed in the melting furnace, the melting furnace is evacuated to less than 2×10 -4 Pa and keep it, gradually heat the melting furnace to 1450°C at a speed of 1kw / 10min to completely melt the raw materials; keep warm for 30min; turn off the power and cool with water for 138min to ...

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Abstract

A method for preparing Si-based binary eutectic in-situ composites is realized through the following steps: a test rod cut form eutectic alloy base metal is placed in a laser suspension zone melt directional solidification furnace and is kept coaxially with a pull mechanism; a laser suspension directional solidification device is used to symmetrically zone melt the test rod by two beams of symmetrical laser with equal quality; and after stable melt zones are obtained, continuous directional solidification of the composites can be realized through pulling. During the process of laser suspension zone melt directional solidification, the laser power is 400 to 1200 W, the pulling speed is 1 to 500 micrometers per second, the lengths of the melt zones are 5 to 9 mm, and the laser spots are 2 to 4mm. Through the method, the crucible-free rapid directional solidification of Si-based binary eutectic alloy at the temperature gradient of 5000 to 7000 K / cm and the pulling speed of 1 to 500 micrometers per second, pollution and cracks caused by the conventional directional solidification crucible are completely eliminated, and the Si-based binary eutectic in-situ composites with an ultra fined structure and uniform fiber distribution are obtained.

Description

technical field [0001] The invention relates to the field of preparation of semiconductor composite materials, in particular to the preparation of Si-based semiconductor eutectic self-generated composite materials with ultra-fine structures by adopting a method of directional solidification with high gradient melting in a laser levitation zone. Background technique [0002] Refractory Metal Silicide TaSi 2 Has a high melting point (T m =2040℃), high conductivity (ρ 293K =20.20Ωμ.cm), lower work function , good oxidation resistance, and good bonding strength with silicon, so Si-TaSi 2 Eutectic self-generated composites are considered to be a new type of cold field emission materials with broad application prospects. At present, the commonly used preparation of the Si-TaSi 2 There are several methods for eutectic self-generated composite materials: [0003] Literature "N.J. Helbren, S.E.R. Hiscocks. Silicon-and germanium-based eutectics [J]. Journal of Materials Science...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B21/04C30B29/10
Inventor 苏海军张军杨新宇刘林傅恒志
Owner NORTHWESTERN POLYTECHNICAL UNIV
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