Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of ITO (Indium Tin Oxide) sputtering target comprising In4Sn3O12 phases

A manufacturing method and sputtering target technology, which are applied in the field of manufacturing ITO sputtering targets containing In4Sn3O12 phase, can solve the problems that hinder the large size, high density and low resistivity of ITO targets, and achieve cost saving, reduction of nodulation rate, The effect of reducing consumption

Active Publication Date: 2012-10-10
宁夏中色新材料有限公司
View PDF3 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nodulation problem in the sputtering process of ITO targets is a key factor hindering the development of ITO targets in the direction of large size, high density and low resistivity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of ITO (Indium Tin Oxide) sputtering target comprising In4Sn3O12 phases
  • Manufacturing method of ITO (Indium Tin Oxide) sputtering target comprising In4Sn3O12 phases
  • Manufacturing method of ITO (Indium Tin Oxide) sputtering target comprising In4Sn3O12 phases

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Heat-treat indium oxide and tin oxide nanopowders at 700°C for 5 hours, and the average specific surface area of ​​indium oxide powder after heat treatment is 5.1m 2 / g, the average specific surface area of ​​tin oxide powder is 9.4m 2 / g.

[0048] The raw material powder after heat treatment is mixed according to the predetermined mass ratio of indium oxide 90: tin oxide 10, and after ball milling for 22 hours, add 25 mass % deionized water to continue ball milling (polyurethane or nylon ball milling tank) for 10 hours. Then add 0.1% by mass polycarbonate dispersant to the slurry (ie raw material powder + deionized water) to prepare a slurry with a concentration of 75% by mass, and perform ball milling and mixing. The ball milling time is 7 hours. After ball milling, 0.5% by mass of acrylic emulsion binder, 0.2% by mass of glycerol humectant, and 0.1% by mass of monoglyceride lubricant were added to the slurry (ie raw material powder + deionized water) and ball milled...

Embodiment 2

[0052] Indium oxide and tin oxide nanopowders were heat-treated at 900°C for 5 hours, and the average specific surface area of ​​indium oxide powder after heat treatment was 7.7m 2 / g, the average specific surface area of ​​tin oxide powder is 11.3m 2 / g.

[0053] The heat-treated raw material powder is mixed according to a predetermined mass ratio of 90:10. After ball milling for 22 hours, 40% by mass of deionized water is added to continue ball milling for 10 hours. Then add 0.1% by mass polycarbonate dispersant to prepare a slurry with a concentration of 60% by mass, perform ball milling and mixing, and the ball milling time is 7 hours. After ball milling, 1% by mass of acrylic acid emulsion binder, 0.2% by mass of glycerol humectant, and 0.1% by mass of monoglyceride lubricant were added to the slurry and ball milled for 3 hours. After ball milling, 0.05% by mass of polyetherimine antifoaming agent was added to the slurry, stirred for 0.5 hours, and then left at room tem...

Embodiment 3

[0057] Indium oxide and tin oxide nanopowders were heat-treated at 800°C for 6 hours, and the average specific surface area of ​​indium oxide powder after heat treatment was 7.7m 2 / g, the average specific surface area of ​​tin oxide powder is 11.3m 2 / g.

[0058] The heat-treated raw material powder is mixed according to a predetermined mass ratio of 90:10, and after 36 hours of ball milling, 30% by mass of deionized water is added to continue ball milling for 12 hours. Then add 2.5% by mass of polycarbonate dispersant to prepare a slurry, perform ball milling and mixing, and the ball milling time is 5 hours. After ball milling, 3% by mass polyvinyl alcohol binder, 0.3% by mass ethanol humectant, and 0.2% by mass monoglyceride lubricant were added to the slurry and ball milled for 3 hours. After ball milling, 0.2% by mass of a silicone defoamer was added to the slurry, stirred for 0.5 hours, and then left to stand at room temperature for 1 hour for vacuum defoaming. Finall...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
specific surface areaaaaaaaaaaa
specific surface areaaaaaaaaaaa
specific surface areaaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacturing method of an ITO (Indium Tin Oxide) sputtering target manufactured with indium oxide-tin oxide mixed powder as a raw material and used for an advanced generation liquid crystal panel, in particular to a manufacturing method of an ITO sputtering target comprising In4Sn3O12 phases. The manufacturing method by comprising the following steps: (1) mixing indium oxide powder with tin oxide powder that are subjected to thermal treatment; (2) adding deionized water and a dispersing agent to prepare slurry for ball milling and mixing; (3) adding a binding agent and a humectant for wet ball milling; (4) adding a defoaming agent to be stirred for vacuum defoamation, and adjusting after standing; (5) molding the slurry by casting; (6) degreasing a molded body after drying; and (7) sintering the degreased molded body to form the ITO sputtering target. The In4Sn3O12 phases in the target are distributed at junctions of In2O3 tricrystal grains; the density and surface roughness of the ITO target are increased to some extent due to the phases; and sputtering nodulation of the ITO target can be effectively reduced.

Description

technical field [0001] The invention relates to a method for manufacturing an ITO sputtering target for a high-generation liquid crystal panel using indium oxide-tin oxide mixed powder as a raw material, especially an Indium-containing 4 sn 3 o 12 Phase ITO sputtering target manufacturing method. Background technique [0002] With the development of electronic display technology, the application of indium is constantly expanding and deepening. In the past two years, touch screen electronic products are very hot in the market. First, there are ipod music players and then derived iphones and ipad tablet computers are popular all over the world. Greatly promoted the development of touch screen. The field of ITO (Indium Tin Oxide, Indium Tin Oxide), which accounts for more than 75% of indium, is an indispensable raw material for manufacturing touch screens. Because the ITO thin film has two characteristics of light transmission and conductivity at the same time, the ITO film...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/622C04B35/01C04B35/634
Inventor 马晓波王东新孙本双钟景明李彬岳坤左婧懿白晓东郑金凤赵世乾张丽刘彤刘兆刚刘创红
Owner 宁夏中色新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com