Light high-strength silicon nitride bonded silicon carbide refractory and preparation method thereof
A refractory material and silicon carbide technology, applied in the field of refractory materials, can solve the problems of increased heat capacity energy consumption of materials, low specific strength of refractory materials, and reduced material life, etc. Effect
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Embodiment 1、2、4、5、8、9、10
[0021] The preparation method of embodiment 1,2,4,5,8,9,10:
[0022] After mixing all the raw materials, carry out ball milling, use absolute ethanol as the ball milling medium, use Si in the planetary mill 3 N 4 Ball milling for 24 hours (the mass ratio of raw materials, balls and absolute ethanol is 1:1.5:1), the ball milling time is 10 hours, the slurry after ball milling is dried at 60°C, and PVA with 10% weight of raw materials is added to granulate , pass through a 40-mesh sieve, place at room temperature for 24 hours, take an appropriate amount of granulated powder in a mold, and dry press to form it. The forming pressure is 40-45MPa. The formed test strip is 80mm long, 7.5mm wide, and about 5.7mm high , degumming, after degumming, nitriding and sintering in a high-temperature vacuum atmosphere sintering furnace under the condition of flowing high-purity nitrogen (purity>99.99%) (nitrogen flow rate: 1-3L / min) to obtain light-weight and high-strength silicon nitride bon...
Embodiment 3、6、7
[0023] The preparation method of embodiment 3,6,7:
[0024] After mixing all the raw materials, carry out ball milling, use absolute ethanol as the ball milling medium, use Si in the planetary mill 3 N 4 Ball milling for 24 hours (the mass ratio of raw materials, balls and absolute ethanol is 1:1.5:1.5), the ball milling time is 8 hours, the slurry after ball milling is dried at 80°C, and PVA with 12% raw material weight is added to granulate , passed through a 60-mesh sieve, placed at room temperature for 24 hours, took an appropriate amount of granulated powder in the mold, and dry-pressed it to form it. The forming pressure was 50-55 MPa. The formed test strip was 80 mm long, 7.5 mm wide, and about 5.5 mm high. , degumming, after degumming, nitriding and sintering in a high-temperature vacuum atmosphere sintering furnace under the condition of flowing high-purity nitrogen (purity>99.99%) (nitrogen flow rate: 1-3L / min) to obtain light-weight and high-strength silicon nitrid...
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