Method for producing semiconductor gas

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, organic chemistry methods, chemical instruments and methods, etc., can solve the problems of difficult distillation and separation, difficulty in obtaining starting materials, and difficult and efficient production methods, etc.

Inactive Publication Date: 2012-10-31
CENT GLASS CO LTD
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  • Description
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Problems solved by technology

The selectivity of this method is high, but the conversion rate is low, it is difficult to call it an efficient production method
In addition, monofluoromethane (boiling point: -78°C) as the target product and hydrogen chloride (boiling point: -85°C) as the by-product are not only close in boiling point, but also show azeotropic phenomenon, so it is not easy to separate by distillation, and complicated purification process ( Patent Document 2)
Furthermore, a method of fluorinating methyl iodide using tetra-n-butylammonium salt is known (Non-Patent Document 1), but compared with the method of Patent Document 1, it is difficult to obtain starting materials
In addition, the starting materials of these methods are not only highly toxic, but also ozone-

Method used

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  • Method for producing semiconductor gas
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preparation example Construction

[0061] The preparation method of the phosphate catalyst is not particularly limited, and a commercially available phosphate can be directly used, or can be prepared by a common precipitation method. As a specific preparation method of the precipitation method, for example, dilute ammonia water is added dropwise to a mixed aqueous solution of metal nitrates (in case of multiple metals) and phosphoric acid, pH is adjusted, precipitated, and aged as necessary. Thereafter, water washing is performed, and whether the water washing is sufficient is confirmed by the electric conductivity of the washing water or the like. Depending on the situation, take out a portion of the slurry and measure the cations contained therein for confirmation. Next, filter and dry. The drying temperature is not particularly limited. Preferably it is 80°C to 150°C. More preferably, it is 100°C to 130°C. The obtained dried body is pulverized to have a uniform particle size, or further pulverized to for...

preparation example 1

[0137] Dilute 30g of 85% phosphoric acid (H 3 PO 4 ) into the phosphoric acid aqueous solution obtained by immersing 100g of granular activated carbon G2X manufactured by Japan EnviroChemicals, Ltd., stirring well, and then standing still for 3 days. Thereafter, it was dried with a rotary evaporator, and then calcined in an electric furnace at 350° C. for 5 hours in a nitrogen stream, thereby preparing a phosphoric acid-carrying activated carbon catalyst.

preparation example 2

[0139] 1000g (2.666mol) aluminum nitrate nonahydrate (Al (NO 3 ) 3 9H 2 O) and 128.6g (0.296mol) of cerium nitrate hexahydrate (Ce(NO 3 ) 3 ·6H 2 O) Dissolved in 5300 cc of pure water, 306 g (3.12 mol) of 85% phosphoric acid was further added and stirred. In this state, it is a transparent solution. Use a 1L large dropping funnel to add 10% ammonia (about 3000cc) dropwise over 10 hours to make it alkaline. Since the concentration of the solid content was high, stirring with a stirrer became impossible during the dropping process, so manual stirring was performed with a stainless steel shovel. After the generated white precipitate was left to stand overnight, it was suction-filtered and washed with water five times.

[0140] This white solid was transferred to a stainless steel pad, and dried overnight in a 180° C. drier. Grind with a mortar, sieve, and form into The particles were calcined at 700°C for 5 hours in a nitrogen stream to prepare the aluminum phosphate / ce...

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Abstract

Disclosed is a method for producing monofluoro methane, which involves at least a pyrolysis step in which a 1-methoxy-1,1,2,2-tetrafluoro ethane is pyrolyzed by bringing same into contact with a catalyst, and a step for collecting monofluoro methane from the pyrolysis product. As a consequence, it is possible to efficiently and practically produce monofluoro methane that essentially does not contain halogens except fluorine.

Description

technical field [0001] The present invention relates to monofluoromethane (CH 3 The production method of F) relates in more detail to a method for producing monofluoromethane used as an etchant, cleaning agent, and other semiconductor gases, and at the same time producing difluoroacetyl fluoride or its derivatives used as an intermediate for pharmaceuticals and agricultural chemicals. Background technique [0002] As a method for producing monofluoromethane, there is known a method of fluorinating methyl chloride with hydrogen fluoride under catalysis (chlorine-fluorine exchange) (Patent Document 1). The selectivity of this method is high, but the conversion rate is low, and it is difficult to call it an efficient production method. In addition, monofluoromethane (boiling point: -78°C) as the target product and hydrogen chloride (boiling point: -85°C) as the by-product are not only close in boiling point, but also show azeotropic phenomenon, so it is not easy to separate by...

Claims

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Application Information

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IPC IPC(8): C07C17/361C07C19/08C07C51/58C07C53/48C09K13/08C11D7/30H01L21/3065C07B61/00
CPCC07C17/361C07C51/58H01L21/31116C07C19/08C07C53/48
Inventor 高田直门井村英明冈本正宗
Owner CENT GLASS CO LTD
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