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Aluminum nitride solid-state laser and preparation method thereof

A solid-state laser, aluminum nitride technology, applied in the direction of the structure/shape of the active medium, active medium materials, etc., can solve the problems of high cost and complex structure, and achieve the effect of simple structure

Active Publication Date: 2012-11-14
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Obviously, in the existing solid-state lasers, more components such as total reflection mirrors and half-transmission mirrors are required, which not only has high cost, but also has a complicated structure.

Method used

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  • Aluminum nitride solid-state laser and preparation method thereof
  • Aluminum nitride solid-state laser and preparation method thereof
  • Aluminum nitride solid-state laser and preparation method thereof

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Embodiment 1

[0034] According to an embodiment of the present invention, a Fe-based 3+ : Aluminum Nitride Solid State Lasers with AlN Nanowire Arrays. Such as figure 2 shown, including the pump source, Fe 3+ :AlN nanowire array and supporting Fe 3+ : The substrate of AlN nanowire array, in which the pump source adopts the laser with the wavelength of 532nm along the Fe 3+ : Pumping from the side of the AlN nanowire array. The working principle of the laser is: when the incident Fe 3+ : When the laser energy on the AlN nanowire exceeds the threshold, AlN produces stimulated radiation, but because AlN has a large refractive index, the light propagates in the nanowire and is reflected and amplified back and forth on the two ends of the nanowire, and finally from the end part of the output laser, so the Fe 3+ : AlN nanowire itself can also be used as an optical resonant cavity. It can be seen that in this laser, Fe 3+ : AlN nanowires can have the functions of a resonant cavity and a w...

Embodiment 2

[0040] Embodiment 2 provides another Fe-based 3+ : the aluminum nitride laser of AlN nanowire array, its difference with embodiment 1 is that Fe 3+ : Fe in AlN nanowire array 3+ The doping concentration, the method comprises the following steps:

[0041] According to the stoichiometric ratio, 4.2g of AlN powder with a purity of 99.99% and 0.4g of Fe powder with a purity of 99.99% were mixed, ground evenly, put into a tantalum carbide crucible, covered with a tantalum carbide cover, and then Put the tantalum crucible into the graphite crucible, screw on the lid of the graphite crucible, put the graphite crucible into an appropriate position in the medium frequency induction heating furnace, and evacuate the system until the vacuum degree is less than 2.0×10 -5 After Torr, fill the cavity with 0.6atm high-purity N 2 Gas (99.999%). Then the system was heated up to 1300°C at a rate of 4°C per minute, and after being kept at 1300°C for 2 hours, it was cooled to room temperature...

Embodiment 3

[0046] Embodiment 3 is a kind of based on Mn 3+ : the aluminum nitride laser of the AlN nanowire array, the principle and structure of the laser are basically the same as in Embodiment 1, and the difference is only in the difference of the doping element and its concentration, that is, the Mn 3+ : AlN nanowire array as Mn 3+ The doping concentration is an AlN nanowire array of 0.05 at.%, so its preparation method includes the following steps:

[0047] According to the stoichiometric ratio, 4.2g of AlN powder with a purity of 99.99% and 0.2g of Mn powder with a purity of 99.99% were mixed, ground evenly, put into a tantalum carbide crucible, covered with a tantalum carbide cover, and then Put the tantalum crucible into the graphite crucible, screw on the lid of the graphite crucible, put the graphite crucible into an appropriate position in the medium frequency induction heating furnace, and evacuate the system until the vacuum degree is less than 2.0×10 -5 After Torr, fill t...

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Abstract

The invention discloses an aluminum nitride solid-state laser and a preparation method thereof. The aluminum nitride solid-state laser comprises a pumping source and a working substance positioned on a substrate, wherein the working substance is an array which is made of transition metal-doped aluminum nitride and has a one-dimensional nano-structure; the transition metal-doped aluminum nitride has the chemical formula of TM<3+>:AlN, wherein the transition metal TM is Cr, Mn, Fe, Co or Ni; and the pumping source is arranged in such a way that the laser emitted from the pumping source irradiates the side surface of the array with the one-dimensional nano-structure. According to the laser, the transition metal-doped aluminum nitride serves as the working substance, so that a resonant cavity and a reflecting mirror do not need to be added; and the output of the laser can be realized by taking the crystal morphology of an aluminum nitride crystal as a natural resonant cavity and a natural reflecting mirror.

Description

technical field [0001] The invention relates to a solid-state laser and a preparation method thereof, in particular to a solid-state laser using doped aluminum nitride as a working substance and a preparation method thereof. Background technique [0002] Lasers have important applications in various aspects such as industry, agriculture, national defense, precision measurement and detection, communication and information processing, and medical treatment. Among them, due to the high power, high conversion efficiency and long life of solid-state lasers, they are often used in ranging, tracking, guidance, drilling, cutting, annealing of semiconductor materials, micromachining of electronic devices, atmospheric detection, and spectral research , surgery and eye surgery, plasma diagnosis, pulse holography, and laser nuclear fusion, etc., so it plays a pivotal role in the laser family (see R.L.Byer, Science.239, 4841 (1988)). [0003] Generally speaking, the basic structure of a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16H01S3/06
Inventor 陈小龙姜良宝王文军左思斌鲍慧强李辉王军
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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