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Preparation method and application of high-purity aluminum oxide

A technology of high-purity alumina and alumina, applied in the fields of alumina/hydroxide preparation, chemical instruments and methods, aluminate/alumina/aluminum hydroxide purification, etc., can solve the problem of reducing the content of metal element impurities, producing Corrosive acid gas, environmental pollution and other problems, to achieve the effect of high firing temperature, easy production operation and high product quality

Active Publication Date: 2014-07-30
SHANGHAI PHICHEM MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Chinese patent CN1092382A discloses a high-purity alumina production process and device. Ammonium alum is calcined and decomposed to obtain alumina powder. During the production process, corrosive acid gas is generated, which not only damages the equipment but also pollutes the environment.
[0008] Chinese patent CN1126177A and Chinese patent CN1146973A disclose a process for producing alumina and alumina micropowder by salting-out method, the main disadvantages of which are low purity and serious environmental pollution
Therefore, it is difficult to effectively reduce the content of metal element impurities in the final alumina solid

Method used

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  • Preparation method and application of high-purity aluminum oxide
  • Preparation method and application of high-purity aluminum oxide
  • Preparation method and application of high-purity aluminum oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Put 150 grams of aluminum hydroxide with a metal element impurity content higher than 70ppm into the quartz glass tube, pass chlorine and nitrogen, the chlorine content is 40%, and heat the tube furnace to 600°C for 6 hours. Use pure water for the cooled solid After washing twice and drying, 148 grams of alumina was obtained, and the metal element impurity content was less than 10 ppm.

[0051] Test items

[0052] Magnesium

[0053] Using the prepared alumina as a raw material, using a bubble-growth single crystal furnace for crystal growth, a colorless and transparent sapphire crystal was obtained, and the dislocation density of the crystal lattice was 512 bars / cm 2 , The index of the product obtained meets the technical standards of light-emitting diode (LED) substrates.

Embodiment 2

[0055] Put 200g of aluminum hydroxide with metal element impurity content higher than 60ppm into the quartz glass tube, pass chlorine gas and air, the chlorine content is 80%, and heat the tube furnace to 800℃ for 12 hours to obtain 199g of aluminum oxide. The impurity content is less than 10ppm.

[0056] Test items

[0057] Nickel

[0058] Using the prepared alumina as a raw material, using a bubble-growth single crystal furnace for crystal growth, a colorless and transparent sapphire crystal is obtained, and the dislocation density of the crystal lattice is 547 bars / cm 2 , The index of the product obtained meets the technical standards of light-emitting diode (LED) substrates.

Embodiment 3

[0060] Put 450 grams of aluminum hydroxide with metal element impurity content higher than 110ppm into the corundum alumina tube, pass chlorine gas, the chlorine content is 100%, heat the tube furnace to 1000°C for 0.5 hours, and wash the cooled solid with pure water After drying, 446 g of alumina was obtained, and the metal element impurity content was less than 10 ppm.

[0061] Test items

[0062] Potassium

[0063] Using the prepared alumina as a raw material, using a bubble-growth single crystal furnace for crystal growth, a colorless and transparent sapphire crystal was obtained, and the dislocation density of the crystal lattice was 589 bars / cm 2 , The index of the product obtained meets the technical standards of light-emitting diode (LED) substrates.

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Abstract

The invention discloses a preparation method and application of high-purity aluminum oxide. The preparation method comprises the following process steps of: placing aluminum compound raw materials containing metal element impurities into a reactor, introducing gas containing a chlorine element, heating the raw materials to 500-1500 DEG C, keeping the temperature for 0.5-40h, subjecting the gas containing the chlorine element and the metal element impurities to a reaction at high temperature to produce a compound containing metal element impurities, and purifying to obtain aluminum oxide with reduced metal element impurities. The method provided by the invention is high in product purity, simple in process requirement, convenient to operate, energy-saving and environment friendly; and the purified aluminum oxide is particularly suitable for preparing fluorescent powder and sapphire monocrystals for preparing light emitting diodes.

Description

Technical field [0001] The invention relates to a preparation method and application of high-purity alumina. Specifically, the present invention relates to a method for reducing metal element impurities in alumina at high temperatures using a gas containing chlorine, and the purification of alumina in the preparation of phosphors and sapphire single crystals used in the preparation of light-emitting diodes. application. Background technique [0002] Alumina is an important chemical raw material, mainly derived from aluminum ore. The traditional production methods can be roughly divided into alkaline method, acid method, acid-base combined method and thermal method. Almost all of them currently used in industrial production belong to alkaline method. The production of alumina by alkaline method is divided into Bayer method, sintering method, and Bayer-sintering combined method. The industrial alumina obtained by the traditional alumina production method contains a higher concen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01F7/46C01F7/30C30B29/20
Inventor 赵冰章韵王寅生张金山
Owner SHANGHAI PHICHEM MATERIAL CO LTD
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