Preparation method of indium tin oxide targets

Abstract

The invention discloses a preparation method of indium tin oxide targets. The preparation method includes taking indium tin oxide powder with the purity higher than 99.99% and the average particle size of 0.02-2 micrometers as a main material, preparing premixed liquid from pure water, water-soluble epoxy resin and dispersing agents, subjecting the main material and the premixed liquid to ball milling sufficiently to obtain slurry capable of dispersing uniformly and flowing easily, pouring, curing and drying the slurry to obtain high-intensity green bodies, and degreasing to obtain high-quality indium tin oxide targets which are of In2O3 single-phase cubic structures, have relative density reaching 99.5%, resistivity lower than 0.1megohm/centimeter and are uniform in composition. The indium tin oxide targets are high in density and can be produced in large size and various shapes; isostatic pressing treatment to the green bodies is omitted, so that production efficiency and field can be improved greatly; nontoxic water-soluble epoxy resin serves as a gel system so that production safety coefficient can be increased greatly while pollution of industrial production to environments can be lowered greatly.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, specifically, the invention is a new method for preparing an indium tin oxide (ITO) target. Background technique [0002] Indium Tin Oxide (Indium Tin Oxide, hereinafter referred to as ITO) target is the key material for the production of various flat panel displays. In industrial production, ITO targets are used to plate a transparent conductive film with a thickness of about 100nm on glass or other substrates by magnetron sputtering, and the film is used as a transparent electrode after etching. At present, ITO transparent conductive film has been widely used in the field of optoelectronics due to its excellent optical and electrical properties, especially in the rapidly developing flat panel display industry. It can be said that the performance and quality of the ITO target almost determines the product quality, production efficiency and yield of the ITO transparent conductive...

AI Technical Summary

Problems solved by technology

[0005] In terms of ITO blank forming, isostatic pressing is generally adopted in China, but this method has obvious defects: it is difficult to form large-size targets, the density of forming targets is uneven, and it is easy to crack, resulting in low yield and poor stability. And the press has high requirements, it is easy to introduce impurities, it is impossible to form a curved target, the equipment investment is huge, and the production cost is high

Wang Yuelin's invention patent CN101319307B discloses a gel injection molding method for ITO targets using the AM / MBAM system, which is very polluting to the environment and the production process is poisonous to humans; in another patent CN102432282A, the gel system is also AM / MBAM and similar toxic and harmful systems; the slurry casting method mentioned in US Patent US2011 / 0127162 by Charles Edmund King and Dsten Blauch et al. actually has the prototype of gel casting, but the organic substances used are highly toxic and the equipment is complicated ,high cost

The above methods have high requirements for the strength of the mold and the size of the micropores of the mold, and the cost of the mold is relatively high. Coupled with additional equipment, the production cost of the green body is high, and the molding agent used is mostly toxic and harmful substances of the acrylamide system.