Semiconductor film with gradually increased hole diameters of different layers and preparation method thereof

A semiconductor and aperture technology, applied in the field of dye-sensitized solar cells, can solve the problems of reducing the overall specific surface area of ​​the photoanode, affecting the dye adsorption amount, etc., and achieves good light scattering effect, improves the utilization rate of incident light, and is easy to obtain.

Inactive Publication Date: 2013-02-06
TIANJIN UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But large particle TiO 2 The introduction of will reduce the overall specifi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor film with gradually increased hole diameters of different layers and preparation method thereof
  • Semiconductor film with gradually increased hole diameters of different layers and preparation method thereof
  • Semiconductor film with gradually increased hole diameters of different layers and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] First, weigh 10g of styrene monomer, 0.13g of potassium persulfate, and 1g of polyvinylpyrrolidone-K30, add the mixture of the three into 100ml of deionized water, and 80 o C was refluxed for 6 hours to prepare polystyrene microspheres with a particle diameter of 200 nm.

[0026] Weigh 4g of terpineol, 20g of absolute ethanol, 1g of P25, 0.3g of ethyl cellulose and 60g of zirconium beads, and mix them by ball milling for 2 hours. After the ball milling, remove the ethanol with a rotary evaporator to prepare the bottom layer slurry of the semiconductor film.

[0027] Weigh 0.25g of the above-prepared polystyrene microspheres, 4g of terpineol, 20g of absolute ethanol, 1g of P25, 0.3g of ethyl cellulose and 60g of zirconium beads, mix them by ball milling for 2 hours, and remove them with a rotary evaporator after ball milling. Ethanol to prepare the interlayer slurry on the bottom layer of the semiconductor film.

[0028] Weigh 0.5g of the above-prepared polystyrene micr...

Embodiment 2

[0031] Weigh 4g of terpineol, 20g of absolute ethanol, 1g of P25, 0.3g of ethyl cellulose and 60g of zirconium beads, and mix them by ball milling for 2 hours. After the ball milling, remove the ethanol with a rotary evaporator to prepare the bottom layer slurry of the semiconductor film.

[0032] Weigh 0.25g of the above-prepared polystyrene microspheres, 4g of terpineol, 20g of absolute ethanol, 1g of P25, 0.3g of ethyl cellulose and 60g of zirconium beads, mix them by ball milling for 2 hours, and remove them with a rotary evaporator after ball milling. Ethanol to prepare the interlayer slurry on the bottom layer of the semiconductor film.

[0033]Weigh 0.5g of the above-prepared polystyrene microspheres, 4g of terpineol, 20g of absolute ethanol, 1g of P25, 0.3g of ethyl cellulose and 60g of zirconium beads, mix them by ball milling for 2 hours, and remove them with a rotary evaporator after ball milling. Ethanol to prepare the top layer slurry on the middle layer of the se...

Embodiment 3

[0036] Weigh 5g of terpineol, 25g of absolute ethanol, 1g of P25, 0.5g of ethyl cellulose and 60g of zirconium beads, and mix them by ball milling for 3 hours. After the ball milling, remove the ethanol with a rotary evaporator to prepare the bottom layer slurry of the semiconductor film.

[0037] Weigh 0.25g of the above-prepared polystyrene microspheres, 5g of terpineol, 25g of absolute ethanol, 1g of P25, 0.5g of ethyl cellulose and 60g of zirconium beads, mix them by ball milling for 3 hours, and remove them with a rotary evaporator after ball milling. Ethanol to prepare the interlayer slurry on the bottom layer of the semiconductor film.

[0038] Weigh 0.5g of the above-prepared polystyrene microspheres, 5g of terpineol, 25g of absolute ethanol, 1g of P25, 0.5g of ethyl cellulose and 60g of zirconium beads, mix them by ball milling for 3 hours, and remove them with a rotary evaporator after ball milling. Ethanol to prepare the top layer slurry on the middle layer of the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a semiconductor film with gradually increased hole diameters of different layers and a preparation method thereof, belonging to the technical field of dye-sensitized solar cells. The semiconductor film is composed of three titanium dioxide particle layers, and the hole diameters of the three layers are gradually increased. The semiconductor film is prepared through the following steps of: preparing styrene microspheres; preparing three kinds of slurry applied to different layers by using titanium dioxide, terpineol, ethyl cellulose, ethanol and polystyrene microspheres; taking fluorine-doped tin oxide conductive glass as a substrate; carrying out coating through silk screen printing; and finally calcining so as to obtain a semiconductor film with gradually increased hole diameters of different layers. The semiconductor film and preparation method thereof disclosed by the invention have the advantages that a structure with gradually increased hole diameters of different layers facilitates the penetration of electrolyte and dye liquid; and the semiconductor film is good in light scattering effect, high in photoelectric conversion rate, the production operation process of the production operation process is simple and the semiconductor film is easy to be in industrial production.

Description

technical field [0001] The invention relates to a semiconductor thin film with progressive apertures on different layers and a preparation method thereof, belonging to the technical field of dye-sensitized solar cells. Background technique [0002] Semiconductor thin films composed of nano-semiconductors have attracted much attention in recent years. Nano-semiconductors have many singular characteristics and extraordinary special functions that cannot be compared with conventional semiconductors, and have unprecedented application prospects in many fields. [0003] With the increasing demand for energy, people's desire to use solar energy is becoming stronger and stronger. Currently popular solar cells on the market are mainly monocrystalline and polycrystalline silicon cells based on silicon. [0004] Since the 1990s, dye-sensitized solar cells (DSSC for short) have attracted much attention due to their low cost and simple preparation process. Since the research team led ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01G9/048H01G9/20
CPCY02E10/542
Inventor 冯亚青彭啸
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products